Submicron Non-contact Simultaneous Infrared and Raman Spectroscopy for Challenging Failure Analysis

We introduce a new infrared (IR) technique that provides submicron spatial resolution by making use of an infraredvisible, pump-probe arrangement that also offers a simultaneous Raman measurement in formerly challenging failure and contamination analyses. These challenges are typically due to the lack of spatial resolution and sample preparation restrictions from conventional FTIR, plus auto-fluorescence (AF) from Raman spectroscopy. Such a combined Optical PhotoThermal InfraRed (O-PTIR) and Raman instrumentation offers spatial resolution improvement over conventional IR measurements by 30 times at 1000 cm-1. The technique also improves sensitivity to exceptionally small quantities (? 400 femtogram) in reflection mode by sensing the photothermal response arising from absorbing infrared radiation (Fig. 1) [1]. The AF-free O-PTIR technique also delivers constant spatial resolution over the entire mid-IR range due to the use of a fixed wavelength probe beam at 532 nm [2]. Simultaneous Raman confirms and complements the O-PTIR measurements in cases with low AF. We will illustrate three examples that will highlight the advantage of the novel technique commonly observed in the failure and contamination analysis community.

The Optical Coherence Tomography and Raman Spectroscopy for Sensing of the Bone Demineralization Process

The presented research was intended to seek new optical methods to investigate the demineralization process of bones. Optical examination of the bone condition could facilitate clinical trials and improve the safety of patients. The authors used a set of complementary methods: polarization-sensitive optical coherence tomography (PS-OCT) and Raman spectroscopy. Chicken bone samples were used in this research. To stimulate in laboratory conditions the process of demineralization and gradual removal of the hydroxyapatite, the test samples of bones were placed into 10% acetic acid. Measurements were carried out in two series. The first one took two weeks with data acquired every day. In the second series, the measurements were made during one day at an hourly interval (after 1, 2, 3, 5, 7, 10, and 24 h). The relation between the content of hydroxyapatite and images recorded using OCT was analyzed and discussed. Moreover, the polarization properties of the bones, including retardation angles of the bones, were evaluated. Raman measurement confirmed the disappearance of the hydroxyapatite and the speed of this process. This work presents the results of the preliminary study on the possibility of measuring changes in bone mineralization by means of the proposed methods and confirms their potential for practical use in the future.

Surface Amplification of Tetraphenylporphyrin Overtone and Combination Raman Bands in Drop Coating Deposition Raman (DCDR) on Electrically Conductive Surfaces

It is essential to realize a Raman measurement technique without artifact or fluorescence signals for high-quality and reliable data in a valid molecular-level analysis and interpretation. This requirement applies especially...

3C-SiC Bulk Growth: Effect of Growth Rate and Doping on Defects and Stress

We report the study of the effect of the growth rate and of the doping on the stress and the defect density of a Cubic Silicon Carbide (3C-SiC) bulk layer grown at low temperature on a silicon substrate. After the growth process, the silicon substrate was melt inside the CVD reactor used for the deposition and then the intrinsic stress was measured by the curvature of the wafer without influence of the thermal stress between silicon and 3C-SiC. A considerable increase of the curvature was observed increasing the doping of the layer. The average stress is compressive and then produces a convex bow. At the same time, the average quality of the grown material deteriorates increasing the doping concentration. Using μ-Raman measurement in cross-section of the 3C-SiC grown samples, it was possible to observe the dependence of the stress and of the quality of the material as a function of the thickness and of the growth rate, due to the variation of the growth rate during the process. In particular, the increase of the growth rate produced both an increase of the stress and a decrease of the material quality. Furthermore, the increase of the doping concentration produced both an increase of the stress and a further deterioration of the crystal quality.