Ferroelectric Film Self-Polarization

1994 ◽  
Vol 361 ◽  
Author(s):  
E. Sviridov ◽  
I. Sem ◽  
V. Alyoshih ◽  
S. Biryukov ◽  
V. Dudkevich
Keyword(s):  
Phase Transition ◽  
Curie Point ◽  
Deposition Temperature ◽  
Negative Charge ◽  
Internal Field ◽  
Gas Discharge ◽  
Ferroelectric Film ◽  
Film Deposition ◽  
Cathode Sputtering ◽  
Point Temperature

ABSTRACTIn the present paper three mechanisms of self-polarization of ferroelectric crystals are discussed: polarization by the crystal bending, that by the “organized” Phase transition and that by the internal field. It is shown that these mechanisms operate also in the case of films. However, the using of cathode sputtering leads to the appearance of two new mechanisms: polarization by the field biasing the substrate with respect to the gas discharge at the film deposition temperature Ts below the Curie point temperature Tc (Ts < TO; and polarization by the field captured by the traps of the negative charge having no time to relax for the time of cooling the film to Tc (Ts > Tc).

Internal Field ofFe57in Ni in the Region of the Curie Point

1965 ◽  
Vol 15 (15) ◽  
pp. 628-632 ◽  
Author(s):  
D. G. Howard ◽  
B. D. Dunlap ◽  
J. G. Dash
Keyword(s):  
Curie Point ◽  
Internal Field

Properties of SiO2 Films Fabricated by Microwave Ecr Plasma Processing with and Without Energetic Particle Bombardment During Film Deposition Part I. Fabrication Processes and Physical Properties

1991 ◽  
Vol 223 ◽  
Author(s):  
T. T. Chau ◽  
S. R. Mejia ◽  
K. C. Kao
Keyword(s):  
Silicon Dioxide ◽  
Particle Bombardment ◽  
Energetic Particle ◽  
Deposition Temperature ◽  
Film Growth ◽  
Plasma Processing ◽  
Film Deposition ◽  
Ecr Plasma ◽  
Group A ◽  
Group B

ABSTRACTSilicon dioxide (SiO2) films were fabricated by microwave ECR plasma processing. Two groups of films were fabricated; group A with the substrates placed in a position directly facing the plasma so that the substrates as well as the on-growing films were subjected to bombardment of energetic particles produced in the plasma, and group B with the substrates placed in a processing chamber physically separated from the plasma chamber in order to prevent or suppress the damaging effects resulting from these energetic particle bombardment. The systems used for fabricating these two different groups of samples are described. The films were deposited at various deposition temperatures. On the basis of the deposition rate as a function of deposition temperature the film growth for group A samples is due mainly to mass-limited reaction, and that for group B samples is due to surface rate limited reaction. The stoichiometric level for group A does not change with deposition temperature though the films density increases with increasing deposition temperature. However, group B samples exhibit an off-stoichiometric property but they become highly stoichiometric as the deposition temperature is increased beyond 200 °C

scholarly journals Improvement of Thin Film Adhesion Due to Bombardment by Fast Argon Atoms

Coatings ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 303 ◽  
Author(s):  
Sergey Grigoriev ◽  
Alexander Metel ◽  
Marina Volosova ◽  
Yury Melnik
Keyword(s):  
Deposition Rate ◽  
Hollow Cathode ◽  
Film Deposition ◽  
Glow Discharge Plasma ◽  
Cathode Sputtering ◽  
Copper Target ◽  
Film Adhesion ◽  
Thin Film Adhesion ◽  
Emissive Grid ◽  
Argon Ions

A new hollow cathode sputtering system is used for beam-assisted deposition of thin films on dielectric substrates. A copper target placed at the hollow cathode bottom is uniformly sputtered by argon ions from the glow discharge plasma filling the cathode. Through an emissive grid, sputtered copper atoms leave the cathode together with accelerated argon ions. On their way to the substrate, the ions—due to charge exchange collisions—turn into fast argon atoms bombarding the growing film. With increasing argon ion energy, continuous bombardment results in the film adhesion improvement and reduction of the deposition rate down to zero, at an energy of about 2 keV. The pulsed bombardment does not influence the film deposition rate, and results in a monotonic growth of the film adhesion up to 20 MPa when increasing the fast atom energy up to 10 keV.

Peculiarities of Ferroelectric Phase Transition in (Ba, Sr) TiO3 Heteroepitaxial Films Obtained by HF Cathode Sputtering

1989 ◽  
Vol 114 (2) ◽  
pp. 559-566 ◽  
Author(s):  
I. N. Zakharchenko ◽  
E. S. Nikitin ◽  
V. M. Mukhortov ◽  
Yu. I. Golovko ◽  
M. G. Radchenko ◽  
...  
Keyword(s):  
Phase Transition ◽  
Ferroelectric Phase Transition ◽  
Ferroelectric Phase ◽  
Cathode Sputtering
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