Grain Formation in Polycrystalline Silicon Films Deposition on SiO2 at Very Low Temperatures

1995 ◽  
Vol 377 ◽  
Author(s):  
Kun-Chih Wang ◽  
Ruo-Yu Wang ◽  
Tri-Rung Yew ◽  
Joseph J. Loferski ◽  
Huey-Liang Hwang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Polycrystalline Silicon ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Grain Formation

ABSTRACTThis paper describes the grain formation in very low temperature polycrystalline silicon (poly-Si) growth on SiO2. The silicon films were deposited by electron cyclotron resonance chemical vapor deposition with hydrogen dilution at 250°C and without any thermal annealing. The largest grain sizes observed in the poly-Si film is about 1 μm. The grains have a leaf-like shape as observed in plan-view transmission electron microscopy. The grain morphologies were determined by cross-sectional transmission electron microscopy and atomic force microscopy. Raman scattering spectrum was used to determine the crystalline fraction. X-ray diffraction patterns were used to study the film crystallinity. A simple model of grain formation is proposed.

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

A Method for Directly Correlating Site-Specific Cross-Sectional and Plan-View Transmission Electron Microscopy of Individual Nanostructures

2012 ◽  
Vol 18 (6) ◽  
pp. 1410-1418 ◽  
Author(s):  
Daniel K. Schreiber ◽  
Praneet Adusumilli ◽  
Eric R. Hemesath ◽  
David N. Seidman ◽  
Amanda K. Petford-Long ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Region Of Interest ◽  
Ex Situ ◽  
3D Analysis ◽  
Cross Sectional ◽  
Plan View ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

AbstractA sample preparation method is described for enabling direct correlation of site-specific plan-view and cross-sectional transmission electron microscopy (TEM) analysis of individual nanostructures by employing a dual-beam focused-ion beam (FIB) microscope. This technique is demonstrated using Si nanowires dispersed on a TEM sample support (lacey carbon or Si-nitride). Individual nanowires are first imaged in the plan-view orientation to identify a region of interest; in this case, impurity atoms distributed at crystalline defects that require further investigation in the cross-sectional orientation. Subsequently, the region of interest is capped with a series of ex situ and in situ deposited layers to protect the nanowire and facilitate site-specific lift-out and cross-sectioning using a dual-beam FIB microscope. The lift-out specimen is thinned to electron transparency with site-specific positioning to within ∼200 nm of a target position along the length of the nanowire. Using the described technique, it is possible to produce correlated plan-view and cross-sectional view lattice-resolved TEM images that enable a quasi-3D analysis of crystalline defect structures in a specific nanowire. While the current study is focused on nanowires, the procedure described herein is general for any electron-transparent sample and is broadly applicable for many nanostructures, such as nanowires, nanoparticles, patterned thin films, and devices.

High-temperature in situ Cross-sectional Transmission Electron Microscopy Investigation of Crystallization Process of Yttrium-stabilized Zirconia/Si and Yttrium-stabilized Zirconia/SiOx/Si Thin Films

2005 ◽  
Vol 20 (7) ◽  
pp. 1878-1887 ◽  
Author(s):  
Takanori Kiguchi ◽  
Naoki Wakiya ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Crystallization Process ◽  
Stabilized Zirconia ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Tem Method

The crystallization process of yttria-stabilized zirconia (YSZ) gate dielectrics deposited on p-Si (001) and SiOx/p-Si(001) substrates and the growth process of SiOx has been investigated directly using high-temperature in situ cross-sectional view transmission electron microscopy (TEM) method and high-temperature plan-view in-situ TEM method. The YSZ layer is crystallized by the nucleation and growth mechanism at temperatures greater than 573 K. Nucleation originates from the film surface. Nucleation occurs randomly in the YSZ layer. Subsequently, the crystallized YSZ area strains the Si surface. Finally, it grows in the in-plane direction with the strain, whereas, if a SiOx layer of 1.4 nm exists, it absorbs the crystallization strain. Thereby, an ultrathin SiOx layer can relax the strain generated in the Si substrate in thin film crystallization process.

scholarly journals Structural Property Study for GeSn Thin Films

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

Plan-view TEM of planar interfaces

1990 ◽  
Vol 48 (4) ◽  
pp. 324-325
Author(s):  
V.P. Dravid ◽  
M.R. Notis ◽  
C.E. Lyman ◽  
A. Revcolevschi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
Electronic Materials ◽  
Specimen Preparation ◽  
Specific Information ◽  
Interface Area ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron

Transmission electron microscopy (TEM), incorporating imaging, diffraction and spectrometry has contributed significantly to the understanding of the structure of crystalline interfaces. Traditionally, planar interfaces are investigated using cross-sectional views (electron beam parallel to the interface) of the specimen. However, plan-view TEM (PVTEM) has recently emerged as a viable and supplementary technique to cross-sectional TEM (XTEM). PVTEM enjoys certain definite advantages over XTEM. One important consideration is that the interface in a PV specimen is buried (sandwiched between two crystals) and is expected to be free of artefacts induced by specimen preparation procedures. Moreover, many multilayer electronic materials are amenable to PVTEM because they can be easily backthinned to electron transparency with virtually no damage to the internal interfaces. PV specimens clearly contain much larger interface area than XTEM specimens, which may be of great significance when statistics are considered. Apart from these considerations PVTEM studies can also offer specific information about the interface not always possible in XTEM. In this brief communication we report some of our results on imaging, diffraction and spectrometry of interfaces obtained by viewing the interfaces in the PV mode.

Investigation of the low angle grain boundaries in highly oriented diamond films via transmission electron microscopy

1994 ◽  
Vol 9 (10) ◽  
pp. 2487-2489 ◽  
Author(s):  
F.R. Sivazlian ◽  
J.T. Glass ◽  
B.R. Stoner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundary ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plan View ◽  
Plasma Chemical Vapor Deposition ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Defect Densities

Highly oriented diamond thin films grown on silicon via microwave plasma chemical vapor deposition were examined by transmission electron microscopy. In the plan view, defects appearing at the grain boundary were easily observed. (100) faceted grains that appeared to have coalesced were connected at their interfaces by dislocations characteristic of a low angle grain boundary. From Burgers vector calculations and electron diffraction patterns, the azimuthal rotation between grains was measured to be between 0 and 6°. The defect densities of these films are compared to reports from (100) textured randomly oriented films, and the relative improvement due to the reduction of misorientation and grain boundary angles is discussed.

Nucleation and Growth of {113} Defects and {111} Dislocation Loops Insilicon-Implanted Selicon

1997 ◽  
Vol 469 ◽  
Author(s):  
G. Z. Pan ◽  
K. N. Tu
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Microstructural Characterization ◽  
Nucleation And Growth ◽  
Growth Behavior ◽  
Dislocation Loops ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron

ABSTRACTPlan-view and cross-sectional transmission electron microscopy have been used to study the microstructural characterization of the nucleation and growth behavior of {113} rodlike defects, as well as their correlation with {111} dislocation loops in silicon amorphized with 50 keV, 36×1014 Si/cm2, 8.0 mAand annealed by rapid thermal anneals at temperatures from 500 °C to 1100 °C for various times. We found that the nucleations of the {113} rodlike defects and {111} dislocation loops are two separate processes. At the beginning of anneals, excess interstitials accumulate and form circular interstitial clusters at the preamorphous/crystalline interface at as low as 600 °C for 1 s. Then these interstitial clusters grow along the <110> direction to form {113} rodlike defects. Later, while the {113} defects have begun to grow and/or dissolve into matrix, the {111} faulted Frank dislocation loops start to form. We also found that the initial interstitial clusters prefer to grow along the <110>directions inclined to the implantation surface.

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