Investigation of the low angle grain boundaries in highly oriented diamond films via transmission electron microscopy

1994 ◽  
Vol 9 (10) ◽  
pp. 2487-2489 ◽  
Author(s):  
F.R. Sivazlian ◽  
J.T. Glass ◽  
B.R. Stoner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundary ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plan View ◽  
Plasma Chemical Vapor Deposition ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Defect Densities

Highly oriented diamond thin films grown on silicon via microwave plasma chemical vapor deposition were examined by transmission electron microscopy. In the plan view, defects appearing at the grain boundary were easily observed. (100) faceted grains that appeared to have coalesced were connected at their interfaces by dislocations characteristic of a low angle grain boundary. From Burgers vector calculations and electron diffraction patterns, the azimuthal rotation between grains was measured to be between 0 and 6°. The defect densities of these films are compared to reports from (100) textured randomly oriented films, and the relative improvement due to the reduction of misorientation and grain boundary angles is discussed.

A Study of the Origin of Band-A Emission in Homoepitaxial Diamond Thin Films

1999 ◽  
Vol 588 ◽  
Author(s):  
Daisuke Takeuchi ◽  
Hideyuki Watanabe ◽  
Sadanori Yamanaka ◽  
Hideyo Okushi ◽  
Koji Kajimura ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Transmission Electron ◽  
Excitonic Emission

AbstractThe band-A emission (around 2.8 eV) observed in high quality (device-grade) homoepitaxial diamond films grown by microwave-plasma chemical vapor deposition (CVD) was studied by means of scanning cathodoluminescence spectroscopy and high-resolution transmission electron microscopy. Recent progress in our study on homoepitaxial diamond films was obtained through the low CH4/H2 conditions by CVD. These showed atomically flat surfaces and the excitonic emission at room temperature, while the band-A emission (2.95 eV) decreased. Using these samples, we found that the band-A emission only appeared at unepitaxial crystallites (UC) sites, while other flat surface parts still showed the excitonic emission. High-resolution transmission electron microscopy revealed that there were grain boundaries which contained π-bonds in UC. This indicates that one of the origin of the band-A emission in diamond films is attributed to π bonds of grain boundaries.

Electron microscopy of the Pb-Sr-Ca-Er-Cu-O superconductor

1990 ◽  
Vol 5 (2) ◽  
pp. 251-257 ◽  
Author(s):  
R. Ramesh ◽  
E. Wang ◽  
L. H. Greene ◽  
M. S. Hegde ◽  
J-M. Tarascon ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundary ◽  
Superconducting Phase ◽  
Zone Axis ◽  
Nominal Composition ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Local Enrichment ◽  
Structure And Microstructure

The structure and microstructure of a solid state processed Pb-Sr-Ca-Er-Cu-O superconductor have been investigated by transmission electron microscopy. In addition to the majority superconducting phase, at least two other impurity phases have been observed. The superconducting phase is a layered structure similar to the Bi2Sr2CaCu2Oy compound, with an extra Cu atom between the two PbO layers. Stacking defects inside the grain have been observed. A grain boundary amorphous phase has also been observed. The steps in the resistivity-temperature plot and the consequent absence of Tc,0 above 8 K are attributed to either the presence of the Pb2Sr2Cu2Oy unit cell at the grain boundary and/or a local enrichment of oxygen at the grain boundaries. Superlattice spots in the [100] zone axis diffraction patterns from regions enriched in Ca and Er with respect to the nominal composition are interpreted as due to ordering of Sr and Ca/Er in the Sr sites.

Grain Formation in Polycrystalline Silicon Films Deposition on SiO2 at Very Low Temperatures

1995 ◽  
Vol 377 ◽  
Author(s):  
Kun-Chih Wang ◽  
Ruo-Yu Wang ◽  
Tri-Rung Yew ◽  
Joseph J. Loferski ◽  
Huey-Liang Hwang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Polycrystalline Silicon ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Grain Formation

ABSTRACTThis paper describes the grain formation in very low temperature polycrystalline silicon (poly-Si) growth on SiO2. The silicon films were deposited by electron cyclotron resonance chemical vapor deposition with hydrogen dilution at 250°C and without any thermal annealing. The largest grain sizes observed in the poly-Si film is about 1 μm. The grains have a leaf-like shape as observed in plan-view transmission electron microscopy. The grain morphologies were determined by cross-sectional transmission electron microscopy and atomic force microscopy. Raman scattering spectrum was used to determine the crystalline fraction. X-ray diffraction patterns were used to study the film crystallinity. A simple model of grain formation is proposed.

Highly oriented diamond growth on positively biased Si substrates

2001 ◽  
Vol 16 (12) ◽  
pp. 3351-3354 ◽  
Author(s):  
Te-Fu Chang ◽  
Li Chang
Keyword(s):  
Electron Microscopy ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates ◽  
Transmission Electron

Deposition of highly textured diamond films on Si(001) has been achieved by using positively bias-enhanced nucleation in microwave plasma chemical vapor deposition. During the biasing period, an additional glow discharge due to the dc plasma effect appeared between the electrode and the substrate. The discharge is necessary for enhanced nucleation of diamond. X-ray diffraction, scanning electron microscopy, and cross-sectional transmission electron microscopy (XTEM) were used to characterize the microstructure of the diamond films on Si. The results show the morphology of diamond grains in square shape with strong diamond (001) texture. XTEM reveals that an amorphous interlayer formed on the smooth Si surface before diamond nucleation.

Structural investigation of diamond nanoplatelets grown by microwave plasma-enhanced chemical vapor deposition

2005 ◽  
Vol 20 (3) ◽  
pp. 703-711 ◽  
Author(s):  
Hou-Guang Chen ◽  
Li Chang
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Plasma Chemical Vapor Deposition ◽  
Transmission Electron ◽  
Side Face ◽  
Face Structure

We report a unique morphology of diamond nanoplatelets synthesized by microwave plasma chemical vapor deposition on Ni coated polycrystalline diamond substrates. The diamond nanoplatelets were as thin as approximately 30 nm. Electron microscopy showed that the diamond nanoplatelets appear in a shape consisting of trapezoid and parallelogram tabular crystallites. Furthermore, the diamond nanoplatelets were single crystalline, as shown by electron diffraction. The edges of nanoplatelets were along the 〈110〉 direction with both the top and bottom tabular surfaces parallel to the {111} plane. Transmission electron microscopy revealed that the twinned planes are parallel to the platelet and side-face structure in ridge shape is bounded by {100} and {111} planes. Lateral growth of diamond nanoplatelet is believed to result from twin and ridge face structure. An oriented thin graphite layer was observed on some diamond nanoplatelets.

Effects of High-Energy Ions on Synthetic Quartz

1972 ◽  
Vol 30 ◽  
pp. 544-545
Author(s):  
Joseph J. Comer ◽  
Charles Bergeron ◽  
Lester F. Lowe
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
High Energy ◽  
Transmission Electron ◽  
Kikuchi Lines ◽  
High Energy Ions ◽  
Diffraction Patterns ◽  
Dauphiné Twinning ◽  
Beam Damage

Using a Van De Graaff Accelerator thinned specimens were subjected to bombardment by 3 MeV N+ ions to fluences ranging from 4x1013 to 2x1016 ions/cm2. They were then examined by transmission electron microscopy and reflection electron diffraction using a 100 KV electron beam.At the lowest fluence of 4x1013 ions/cm2 diffraction patterns of the specimens contained Kikuchi lines which appeared somewhat broader and more diffuse than those obtained on unirradiated material. No damage could be detected by transmission electron microscopy in unannealed specimens. However, Dauphiné twinning was particularly pronounced after heating to 665°C for one hour and cooling to room temperature. The twins, seen in Fig. 1, were often less than .25 μm in size, smaller than those formed in unirradiated material and present in greater number. The results are in agreement with earlier observations on the effect of electron beam damage on Dauphiné twinning.

Examination of Extra Electron Diffraction Spots Observed in Deuterium-Irradiated Silicon by Using Parallel Electron Beam Illumination

1990 ◽  
Vol 48 (2) ◽  
pp. 490-491
Author(s):  
Ryuichiro Oshima ◽  
Shoichiro Honda ◽  
Tetsuo Tanabe
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Single Crystal ◽  
Mixed Solution ◽  
Parallel Beam ◽  
Defect Clusters ◽  
Float Zone ◽  
Transmission Electron ◽  
Extra Electron ◽  
Diffraction Patterns

In order to examine the origin of extra diffraction spots and streaks observed in selected area diffraction patterns of deuterium irradiated silicon, systematic diffraction experiments have been carried out by using parallel beam illumination.Disc specimens 3mm in diameter and 0.5mm thick were prepared from a float zone silicon single crystal(B doped, 7kΩm), and were chemically thinned in a mixed solution of nitric acid and hydrogen fluoride to make a small hole at the center for transmission electron microscopy. The pre-thinned samples were irradiated with deuterium ions at temperatures between 300-673K at 20keV to a dose of 1022ions/m2, and induced lattice defects were examined under a JEOL 200CX electron microscope operated at 160kV.No indication of formation of amorphous was obtained in the present experiments. Figure 1 shows an example of defects induced by irradiation at 300K with a dose of 2xl021ions/m2. A large number of defect clusters are seen in the micrograph.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

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