Band Discontinuity Effect on a-Si:H and a-SiGe:H Solar Cells
Keyword(s):
ABSTRACTThe electrical bandgap of microcrystalline silicon (μc-Si:H) p type layers used in a-Si:H alloy solar cells and the band edge discontinuities between μc-Si:H and a-Si:H alloys have been determined by internal photoemission measurements. The bandgap of μc-Si:H is found to be in the range of 1.50 to 1.57 eV, and the discontinuities at the conduction and the valence band edges are 0 to 0.07 and 0.26 to 0.35 eV, respectively. Use of these parameters in the numerical simulation of single-junction a-Si:H and a-SiGe:H alloy solar cells is found to predict experimental results of solar cell performance.
2014 ◽
Vol 2
(45)
◽
pp. 19282-19289
◽
2017 ◽
Vol 56
(5S1)
◽
pp. 05DB03
◽
Keyword(s):
2015 ◽
Vol 7
(36)
◽
pp. 20418-20429
◽
Keyword(s):
Keyword(s):
2017 ◽
Vol 1
(6)
◽
pp. 1059-1072
◽
2018 ◽
Vol 6
(32)
◽
pp. 15853-15858
◽
Keyword(s):