Surface-Oriented Oxygen Mass Transport During Implantation

1995 ◽  
Vol 378 ◽  
Author(s):  
A. B. Danilin ◽  
L. A. Charnyi ◽  
A. W. Nemirovski ◽  
V. V. Saraikin
Keyword(s):  
Low Temperature ◽  
Oxide Film ◽  
Current Density ◽  
Superficial Layer ◽  
Concentration Profiles ◽  
X Ray ◽  
Oxygen Ions ◽  
Implantation Temperature ◽  
Thin Oxide Film ◽  
Concentration Peak

AbstractThe effect of implantation conditions on the localization of oxygen implanted with substoichiometric doses has been studied. Oxygen ions were implanted into Si wafers coated with a thin oxide film, which was etched off after the implantation. We used various implantation modes. After the implantation, the specimens were studied using SIMS and X-ray diffractometry. The concentration profiles suggest that at the lower implantation temperature, part of oxygen migrates toward the Si-SiO2 interface. The effect does not refer to the usual enhancement of SIMS signal at the surface because the concentration peak is at a depth of about 25 nm. Calculated deformation profiles indicate a compression at the same depth, the effect being the strongest for the low current density. The result suggests that the superficial layer is rich in vacancial-type defects. The coincidence of the deformation and oxygen concentration maxima leads to the conclusion that oxygen migrates toward the surface in the form of A-centers. A similar phenomenon has been observed for sequential low-temperature implantation of oxygen and nitrogen.

ChemInform Abstract: THE KINETICS OF THIN OXIDE FILM FORMATION ON IRON USING PROTON-IMPACT-EXCITED X-RAY ANALYSIS

1973 ◽  
Vol 4 (34) ◽  
pp. no-no
Author(s):  
P. B. JUN. NEEDHAM ◽  
H. W. JUN. LEAVENWORTH ◽  
T. J. DRISCOLL
Keyword(s):  
Oxide Film ◽  
Film Formation ◽  
X Ray ◽  
Proton Impact ◽  
Thin Oxide Film ◽  
Thin Oxide ◽  
Kinetics Of

Behaviors of the Zr–1.0Sn–0.39Nb–0.31Fe–0.05Cr Alloy at High Temperature

2011 ◽  
Vol 399-401 ◽  
pp. 80-84
Author(s):  
Yi Yuan Tang ◽  
Jie Li Meng ◽  
Kai Lian Huang ◽  
Jian Lie Liang
Keyword(s):  
Thermal Expansion ◽  
Phase Transformation ◽  
High Temperature ◽  
Oxide Film ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thin Oxide Film ◽  
Thermal Expansion Coefficients ◽  
Expansion Coefficients

Phase transformation of the Zr-1.0Sn-0.39Nb-0.31Fe-0.05Cr alloy was investigated by high temperature X-ray diffraction (XRD). The XRD results revealed that the alloy contained two precipitates at room temperature, namely β-Nb and hexagonal Zr(Nb,Fe,Cr,)2. β-Nb was suggested to dissolve into the α-Zr matrix at the 580oC. Thin oxide film formed at the alloy’s surface was identified as mixture of the monoclinic Zr0.93O2and tetragonal ZrO2, when the temperature reached to 750oC and 850 oC. The thermal expansion coefficients of αZr in this alloy was of αa = 8.39×10-6/°C, αc = 2.48×10-6/°C.

Generation of O2 and metalorganic cluster ion beams and its application to low-temperature thin oxide film formation

1996 ◽  
Vol 217-218 ◽  
pp. 78-81 ◽  
Author(s):  
M. Akizuki ◽  
J. Matsuo ◽  
M. Harada ◽  
S. Ogasawara ◽  
A. Doi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Oxide Film ◽  
Film Formation ◽  
Ion Beams ◽  
Thin Oxide Film ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Thin Oxide

Observation of Vacancy-Oxygen Complexes in Silicon Implanted with Substoichiometric Doses of Oxygen Ions

1995 ◽  
Vol 378 ◽  
Author(s):  
A. I. Belogorokhov ◽  
L. A. Charnyi ◽  
A. B. Danilin ◽  
A. W. Nemirovski
Keyword(s):  
Nitrogen Atmosphere ◽  
Double Crystal ◽  
X Ray ◽  
Oxygen Ions ◽  
Implantation Temperature ◽  
Before And After ◽  
Oxygen Complexes

AbstractCz-grown p-Si(111) specimens were implanted with O+ ions at an energy of 150 keV and doses of 0.25, 0.5, and 1.0 (·1017) cm−2. The implantation temperatures used were 350 and 650 °C. After the implantation, some of the specimens were annealed at 1000 °C for 1 h in a nitrogen atmosphere. IR data indicated the presence of vacancy-oxygen complexes both before and after annealing, irrespective of implantation temperature. Double-crystal X-ray rocking curves also showed that vacancy-type defects are present.

The Kinetics of Thin Oxide Film Formation on Iron Using Proton-Impact-Excited X-Ray Analysis

1973 ◽  
Vol 120 (6) ◽  
pp. 778 ◽  
Author(s):  
P. B. Needham ◽  
H. W. Leavenworth ◽  
T. J. Driscoll
Keyword(s):  
Oxide Film ◽  
Film Formation ◽  
X Ray ◽  
Proton Impact ◽  
Thin Oxide Film ◽  
Thin Oxide ◽  
Kinetics Of

Low temperature x-ray microanalysis of frozen-hydrated tobacco leaves

1984 ◽  
Vol 42 ◽  
pp. 284-285
Author(s):  
S. Edith Taylor ◽  
Patrick Echlin ◽  
May McKoon ◽  
Thomas L. Hayes
Keyword(s):  
Low Temperature ◽  
Lemna Minor ◽  
Root Tips ◽  
Tobacco Leaves ◽  
X Ray ◽  
Whole Cells ◽  
Carbon Coated ◽  
The Right ◽  
Beam Currents ◽  
The University

Low temperature x-ray microanalysis (LTXM) of solid biological materials has been documented for Lemna minor L. root tips. This discussion will be limited to a demonstration of LTXM for measuring relative elemental distributions of P,S,Cl and K species within whole cells of tobacco leaves.Mature Wisconsin-38 tobacco was grown in the greenhouse at the University of California, Berkeley and picked daily from the mid-stalk position (leaf #9). The tissue was excised from the right of the mid rib and rapidly frozen in liquid nitrogen slush. It was then placed into an Amray biochamber and maintained at 103K. Fracture faces of the tissue were prepared and carbon-coated in the biochamber. The prepared sample was transferred from the biochamber to the Amray 1000A SEM equipped with a cold stage to maintain low temperatures at 103K. Analyses were performed using a tungsten source with accelerating voltages of 17.5 to 20 KV and beam currents from 1-2nA.

Bulk standards for low-temperature biological x-ray microanalysis

1984 ◽  
Vol 42 ◽  
pp. 282-283
Author(s):  
P. Echlin ◽  
M. McKoon ◽  
E.S. Taylor ◽  
C.E. Thomas ◽  
K.L. Maloney ◽  
...  
Keyword(s):  
Phase Separation ◽  
Low Temperature ◽  
Analytical Method ◽  
Salt Solutions ◽  
Absolute Concentration ◽  
Cooling Process ◽  
X Ray ◽  
The Absolute ◽  
Analytical Procedures ◽  
Electrical Conductors

Although sections of frozen salt solutions have been used as standards for x-ray microanalysis, such solutions are less useful when analysed in the bulk form. They are poor thermal and electrical conductors and severe phase separation occurs during the cooling process. Following a suggestion by Whitecross et al we have made up a series of salt solutions containing a small amount of graphite to improve the sample conductivity. In addition, we have incorporated a polymer to ensure the formation of microcrystalline ice and a consequent homogenity of salt dispersion within the frozen matrix. The mixtures have been used to standardize the analytical procedures applied to frozen hydrated bulk specimens based on the peak/background analytical method and to measure the absolute concentration of elements in developing roots.

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