Temperature Dependence of Cathodoluminescence From InxGa1-xAs/GaAs Multiple Quantum Wells

1995 ◽  
Vol 379 ◽  
Author(s):  
K. Rammohan ◽  
D.H. Rich ◽  
A. Larsson
Keyword(s):  
Activation Energy ◽  
Quantum Wells ◽  
Temperature Dependence ◽  
Spatial Variations ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Nonradiative Recombination ◽  
Intensity Dependence ◽  
Thermally Activated

ABSTRACTThe temperature dependence of the cathodoluminescence (CL) originating from In0.21Ga0.79As/GaAs multiple quantum wells has been studied between 86 and 250 K. The CL intensity exhibits an Arrenhius-type dependence on temperature (T), characterized by two different activation energies. The spatial variations in activation energy caused by the presence of interfacial misfit dislocations is examined. The CL intensity dependence on temperature for T ≲ 150 K is controlled by thermally activated nonradiative recombination. For T ≳ 150 K the decrease in CL intensity is largely influenced by thermal re-emission of carriers out of the quantum wells.

scholarly journals Well-width dependence of radiative and nonradiative recombination times in ZnO/Mg0.12Zn0.88O multiple quantum wells

2001 ◽  
Vol 90 (7) ◽  
pp. 3650-3652 ◽  
Author(s):  
C. H. Chia ◽  
T. Makino ◽  
Y. Segawa ◽  
M. Kawasaki ◽  
A. Ohtomo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Nonradiative Recombination

TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE OF FLAT AND UNDULATED SiGe/Si MULTIPLE QUANTUM WELLS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4211-4214 ◽  
Author(s):  
B. W. CHENG ◽  
J. G. ZHANG ◽  
Y. H. ZUO ◽  
R. W. MAO ◽  
C. J. HUANG ◽  
...  
Keyword(s):  
Elevated Temperature ◽  
Quantum Wells ◽  
Blue Shift ◽  
Band Alignment ◽  
Multiple Quantum Wells ◽  
Luminescence Spectra ◽  
Multiple Quantum ◽  
Type Ii ◽  
Thermally Activated ◽  
Strained Sige

Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat samples has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.

Temperature dependence of photoreflectance in GaAs-AlGaAs multiple quantum wells

1986 ◽  
Vol 174 (1-3) ◽  
pp. 206-210 ◽  
Author(s):  
O.J. Glembocki ◽  
B.V. Shanabrook ◽  
W.T. Beard
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

scholarly journals Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 1023
Author(s):  
Yuhao Ben ◽  
Feng Liang ◽  
Degang Zhao ◽  
Xiaowei Wang ◽  
Jing Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Hydrogen Treatment ◽  
Key Factors ◽  
Anomalous Temperature ◽  
Luminescence Efficiency ◽  
Integrated Intensity ◽  
Non Equilibrium

An increase of integrated photoluminescence (PL) intensity has been observed in a GaN-based multiple quantum wells (MQWs) sample. The integrated intensity of TDPL spectra forms an anomalous variation: it decreases from 30 to 100 K, then increases abnormally from 100 to 140 K and decreases again when temperature is beyond 140 K. The increased intensity is attributed to the electrons and holes whose distribution are spatial non-equilibrium distributed participated in the radiative recombination process and the quantum barrier layers are demonstrated to be the source of non-equilibrium distributed carriers. The temperature dependence of this kind of spatial non-equilibrium carriers’ dynamics is very different from that of equilibrium carriers, resulting in the increased emission efficiency which only occurs from 100 to 140 K. Moreover, the luminescence efficiency of MQWs with non-equilibrium carriers is much higher than that without non-equilibrium carriers, indicating the high luminescence efficiency of GaN-based LEDs may be caused by the non-equilibrium distributed carriers. Furthermore, a comparison analysis of MQWs sample with and without hydrogen treatment further demonstrates that the better quantum well is one of the key factors of this anomalous phenomenon.

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