Growth of GaN without Yellow Luminescence
Keyword(s):
ABSTRACTWe report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced By growing GaN under Ga-rich condition or doping GaN with Ge or Mg.
1998 ◽
Vol 264-268
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pp. 1375-1380
1997 ◽
Vol 282-287
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pp. 587-588
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1996 ◽
Vol 35
(Part 1, No. 6A)
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pp. 3343-3349
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2004 ◽
Vol 43
(5A)
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pp. 2667-2671
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1983 ◽
Vol 64
(1)
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pp. 76-82
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