scholarly journals Carbon, Nitrogen, and Oxygen Ion Implantation of Stainless Steel

1995 ◽  
Vol 396 ◽  
Author(s):  
D.J. Rej ◽  
N.V. Gavrilov ◽  
D. Emlin ◽  
I. Henins ◽  
K. Kern ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Ion Implantation ◽  
Plasma Source ◽  
Beam Line ◽  
Ion Current ◽  
Concentration Profiles ◽  
Oxygen Ion ◽  
Plasma Source Ion Implantation ◽  
Current Densities ◽  
Oxygen Ion Implantation

AbstractIon implantation experiments of C, N and O into stainless steel have been performed with beam-line and plasma source ion implantation methods. Acceleration voltages are varied between 27 and 50 kV, with pulsed ion current densities between 1 and 10 mA/cm2. Implanted doses range from 0.5 to 3×1018cm-2, while workpiece temperatures are maintained between 25 and 800°C. The implant concentration profiles, microstructure and surface mechanical properties of the implanted materials are reported.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Recent results in plasma source ion implantation

1992 ◽  
Author(s):  
JOHN CONRAD ◽  
M. ABUZRIBA ◽  
J. BLANCHARD ◽  
D. CHAPEK ◽  
A. CHEN ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Plasma Source ◽  
Plasma Source Ion Implantation

Boron doping of silicon by plasma source ion implantation

1997 ◽  
Vol 93 (2-3) ◽  
pp. 247-253 ◽  
Author(s):  
R.J. Matyi ◽  
D.L. Chapek ◽  
D.P. Brunco ◽  
S.B. Felch ◽  
B.S. Lee
Keyword(s):  
Ion Implantation ◽  
Boron Doping ◽  
Plasma Source ◽  
Plasma Source Ion Implantation
Sign in / Sign up

Export Citation Format

Share Document