Laser Crystallization and Annealing of Ferroelectric Thin Films

1995 ◽  
Vol 397 ◽  
Author(s):  
J.S. Zhu ◽  
X.M. Lu ◽  
X. Liu ◽  
W. Tian ◽  
Z. Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Laser Annealing ◽  
Ferroelectric Phase ◽  
Ferroelectric Thin Films ◽  
Laser Crystallization ◽  
Amorphous Films ◽  
Krf Laser

ABSTRACTFerroelectric PbZr0.44Ti0.56O3 film with pure ferroelectric phase was fabricated by Ar3+ and KrF laser crystallization technique from as-deposited amorphous films, with the substrate at room temperature. Laser annealing technique was also used to improve the quality of BaTiO3 (BT) films.

Interface motion during recrystallization of amorphous NiSi2

1990 ◽  
Vol 48 (4) ◽  
pp. 524-525
Author(s):  
J. L. Batstone ◽  
D.A. Smith
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Amorphous Film ◽  
Nucleation And Growth ◽  
Recrystallization Process ◽  
Amorphous Films ◽  
Interface Motion ◽  
Si Substrates ◽  
Spherical Caps ◽  
Crystal Interfaces

Recrystallization of amorphous NiSi2 involves nucleation and growth processes which can be studied dynamically in the electron microscope. Previous studies have shown thatCoSi2 recrystallises by nucleating spherical caps which then grow with a constant radial velocity. Coalescence results in the formation of hyperbolic grain boundaries. Nucleation of the isostructural NiSi2 results in small, approximately round grains with very rough amorphous/crystal interfaces. In this paper we show that the morphology of the rccrystallizcd film is dramatically affected by variations in the stoichiometry of the amorphous film.Thin films of NiSi2 were prepared by c-bcam deposition of Ni and Si onto Si3N4, windows supported by Si substrates at room temperature. The base pressure prior to deposition was 6 × 107 torr. In order to investigate the effect of stoichiomctry on the recrystallization process, the Ni/Si ratio was varied in the range NiSi1.8-2.4. The composition of the amorphous films was determined by Rutherford Backscattering.

Preparation of BaTiO3 thin films using pulsed KrF laser deposition and IN SITU laser annealing

1998 ◽  
Vol 20 (1-4) ◽  
pp. 87-94
Author(s):  
Atsushi Ito ◽  
Akihiko Machida ◽  
Minoru Obara
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Laser Deposition ◽  
Krf Laser

Doping and crystallization of amorphous SiGe films with an excimer (KrF) laser

1995 ◽  
Vol 10 (8) ◽  
pp. 1884-1888 ◽  
Author(s):  
S. Krishnan ◽  
M.I. Chaudhry ◽  
S.V. Babu
Keyword(s):  
Silicon Germanium ◽  
Room Temperature ◽  
Laser Pulses ◽  
Laser Exposure ◽  
Silicon Substrates ◽  
A Value ◽  
Crystal Film ◽  
Krf Laser ◽  
Amorphous Silicon Germanium

Amorphous silicon germanium (a-SiGe) films, deposited on silicon substrates at room temperature in a molecular beam epitaxy system, were transformed into a single-crystal film and doped with phosphorus by exposure to KrF laser pulses. Electron channeling patterns showed that laser exposure resulted in crystallization of the undoped a-SiGe films. The SiGe films were doped by laser irradiation, using a phosphorus spin-on-dopant. The sheet resistance of the doped films decreased with increasing numbers of pulses, reaching a value of about ∼ 5 × 104 ohms/□ after 15 pulses. I-V data from mesa-type n-SiGe/p-Si diode devices were used to determine the effect of laser processing on the quality of the SiGe films.

Electrical Properties of Nanostructure n-ZnSe/p-Si(100) Heterojunction Thin Film Diode

2018 ◽  
Vol 775 ◽  
pp. 246-253
Author(s):  
Ngamnit Wongcharoen ◽  
Thitinai Gaewdang
Keyword(s):  
Thin Films ◽  
Ideality Factor ◽  
Room Temperature ◽  
Energy Levels ◽  
Thermionic Emission ◽  
Depletion Region ◽  
Trap Level ◽  
Characteristic Energy ◽  
Znse Thin Films

The ZnSe/Si heterojunction is of specific interest since this structure provides effective solar cell and enables the integration of wide bandgap device in silicon circuits. It is known that the quality of the diode and the current transport mechanisms across the heterojunction may be greatly influenced by the quality of the interface and depends on the crystallinity of the film layer. In this work, n-ZnSe/p-Si (100) heterojunction was fabricated by thermal evaporating ZnSe thin films on p-Si (100) substrates. The current-voltage characteristics of n-ZnSe/p-Si (100) heterojunction were investigated in temperature range 20-300 K. Some important parameters such as barrier height, ideality factor and series resistance values evaluated by using thermionic emission (TE) theory and Cheung’s method at room temperature are n = 2.910,φB0= 0.832 eV and 8.59103Ω, respectively. The temperature dependence of the saturation current and ideality factor are well described by tunneling enhanced recombination at junction interface with activation energy and characteristic energy values about 1.293 eV and E00= 95 meV, respectively. The carrier concentration of ZnSe thin films about 3.16×1013cm-3was deduced from the C-V measurements at room temperature. Admittance spectroscopy was employed for analysis of the defect energy levels situated in depletion region. The results showed that there was a single trap level whose position in the band gap was close to 0.04 eV above valence band. The results of this work may be useful for application such as heterojunction solar cells.

Pulsed KrF laser annealing of blue emitting SrS:Cu,Ag thin films

2002 ◽  
Vol 38 (23) ◽  
pp. 1466 ◽  
Author(s):  
S.C. Liew ◽  
D.C. Koutsogeorgis ◽  
W.M. Cranton ◽  
C.B. Thomas
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Krf Laser

Unusual properties of nanoscale ferroelectrics

2017 ◽  
Author(s):  
Huaxiang Fu
Keyword(s):  
Thin Films ◽  
Ferroelectric Phase ◽  
Structural Phase ◽  
Ferroelectric Thin Films ◽  
One Dimensional ◽  
Theoretical Approaches ◽  
Polarization Saturation ◽  
Low Dimensional ◽  
Ferroelectric Phase Transitions ◽  
Polarization Phase

This article describes the unusual properties of nanoscale ferroelectrics (FE), including widely tunable polarization and improved properties in strained ferroelectric thin films; polarization enhancement in superlattices; polarization saturation in ferroelectric thin films under very large inplane strains; occurrence of ferroelectric phase transitions in one-dimensional wires; existence of the toroidal structural phase in ferroelectric nanoparticles; and the symmetry-broken phase-transition path when one transforms a vortex phase into a polarization phase. The article first considers some of the critical questions on low-dimensional ferroelectricity before discussing the theoretical approaches used to determine the properties of ferroelectric nanostructures. It also looks at 2D ferroelectric structures such as surfaces, superlattices and thin films, along with 1D ferroelectric nanowires and ferroelectric nanoparticles.

Room-temperature fabrication of highly oriented β-Ga2O3 thin films by excimer laser annealing

2015 ◽  
Vol 424 ◽  
pp. 38-41 ◽  
Author(s):  
Daishi Shiojiri ◽  
Ryosuke Yamauchi ◽  
Daiji Fukuda ◽  
Nobuo Tsuchimine ◽  
Satoru Kaneko ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Room Temperature ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Laser Annealing of Pb(Zr0.52Ti0.48)O3 Thin Films Using Pulsed Excimer (KrF) Laser

2003 ◽  
Vol 52 (1) ◽  
pp. 119-126
Author(s):  
Srinivas Kuchipudi ◽  
I-Nan Lin ◽  
Hsiu-Chuan Lee ◽  
Yung-Chen Lin ◽  
Yu-Lin Luo ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Krf Laser
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