Defects and AlSb Precipitate Nucleation in Laser Irradiated Aluminum

1981 ◽  
Vol 4 ◽  
Author(s):  
P. S. Peercy ◽  
D. M. Follstaedt ◽  
S. T. Picraux ◽  
W. R. Wampler
Keyword(s):  
Room Temperature ◽  
Laser Energy ◽  
Ion Beam ◽  
Threshold Energy ◽  
Single Pulse ◽  
Temperature Profiles ◽  
Beam Analysis ◽  
Slip Deformation ◽  
Precipitate Nucleation ◽  
Substrate Temperatures

ABSTRACTLattice defects and precipitates induced in unimplanted and Sb-implanted <110> single crystal Al by single pulse irradiation with a Q-switched ruby laser were studied using ion beam analysis and electron microscopy. The absorbed laser energy during irradiation is directly measured in these studies to allow precise numerical modeling of the melt times and temperature profiles. For unimplanted Al, slip deformation gives rise to increased channeled yields throughout the analyzed depth and occurs for energies well below the melt threshold energy of 3.5 J/cm2. Slip deformation is also observed for irradiation energies above the melt threshold energy, and melting is accompanied by a discontinuous increase in the minimum channeling yield, X min- Implanted Sb (to ∼2 at.% peak concentrations) is found to impede epitaxial regrowth and result in polycrystalline Al formation for laser energies such that the melt front is believed not to penetrate through the Sb-containing region. For deeper melt depths, a metastable alloy is formed with up to 35% of the Sb located in substitutional sites. AlSb precipitate formation in the melt was not observed for room temperature irradiations; however, randomly oriented AlSb precipitates are observed for irradiation at substrate temperatures of 100 and 200 °C These measurements yield an estimated time for nucleation of AlSb precipitates in molten Al of 5 nsec < tnuc < 25 nsec.

Solvent and Curing Effects on Diffusion at Polyimide Interfaces

1989 ◽  
Vol 154 ◽  
Author(s):  
S. F. Tead ◽  
E. J. Kramer ◽  
T. P. Russell ◽  
W. Volksen
Keyword(s):  
Glass Transition ◽  
Transition Temperature ◽  
Spin Coating ◽  
Room Temperature ◽  
Ion Beam ◽  
Complete Conversion ◽  
Thermally Activated ◽  
Post Annealing ◽  
Analysis Technique ◽  
Beam Analysis

AbstractInterdiffusion at interfaces between deuterated polyamic acid (d-PAA) and polyimide (PI) films was investigated with forward recoil spectrometry, an ion beam analysis technique. The PI films were prepared by spin – coating a solution of PAA on a silicon substrate, followed by an anneal at a temperature Ti, which produced partial or complete conversion of the PAA to PI. An overlayer of d-PAA was added in one set of samples by spin – coating from solution and in another set by transferring (in the absence of solvents) a dry d- PAA film onto the PI surface. The bilayer samples were then either annealed at a temperature Td or allowed to stand at room temperature. Bilayers prepared by spin – coating d-PAA from solution directly on partially cured PI films had interdiffusion distances w that decreased with increasing values of Ti to immeasurable levels by Ti = 200 °C. The decrease in w with increasing Ti is thought to be caused by a positive Flory parameter between PAA and PI which increases with the imide fraction in the PI film; the result is an increasing immiscibility between the swollen polymer layers. No interdiffusion occurred in the solventless – transfer samples for any combination of temperatures Ti or Td from room temperature up to 400 °C. Post – annealing of spin – coated bilayers at a temperature Td up to 400 °C was ineffective in producing any additional interdiffusion. Both of these results indicate that thermally activated interdiffusion (even for initially unimidized samples) does not exist in the absence of solvents, an effect attributed to the rapid increase of the glass transition temperature of the polymer with imidization.

1X Thin Films Prepared By Mass Separated Ion Beam Deposition

1994 ◽  
Vol 354 ◽  
Author(s):  
H. C. Hofsäss ◽  
C. Ronntng ◽  
U. Griesmeier ◽  
M. Gross
Keyword(s):  
Thermal Activation ◽  
Room Temperature ◽  
Ion Beam ◽  
Ir Absorption ◽  
Ion Energy ◽  
Ion Beam Deposition ◽  
Ion Energies ◽  
Substrate Temperatures ◽  
Absorption Measurements ◽  
Beam Deposition

AbstractWe have studied the growth and the properties of CN films prepared by deposition of mass separated 12C+ and 14N+ ions. The film thickness and density were determined as a function of ion energy between 20 eV and 500 eV and for substrate temperatures of 20 °C and 350 °C. Sputtering effects limit the maximum N concentration to about 30 - 40 at.% even for ion energies as low as 20 eV. IR absorption measurements indicate predominantly C-N and C=N bonding and an amorphous or strongly disordered CN-network. For room temperature deposited CN films with N concentrations up to 25 at.% I-V curves of metal-CN-metal devices show Frenkel-Poole behavior due to field-enhanced thermal activation of localized electrons. Films deposited at 350 °C have N concentrations below 15 at.% and graphitic properties like low resistivity and a density close to graphite.

Infrared-Photovoltaic Responses of Ion-Beam Synthesized β-FeSi2/n-Si Heterojunctions

1999 ◽  
Vol 607 ◽  
Author(s):  
Yoshihito Maeda ◽  
Kenji Umezawa ◽  
Kiyoshi Miyake ◽  
Kenya Ohashi
Keyword(s):  
Room Temperature ◽  
Interband Transition ◽  
Ion Beam ◽  
Photovoltaic Cells ◽  
Threshold Energy ◽  
Surface Recombination ◽  
Wavelength Region ◽  
Pronounced Increase ◽  
Surface Recombination Rate ◽  
Trap Levels

AbstractPhotoresponses of photovoltaic cells using ion-beam synthesized (IBS) polycrystalline p+-β-FeSi2/n-Si heterojunctions were examined in an infrared (IR) wavelength region. At room temperature, an evident photoresponse due to an internal photoemission from trap levels in β-FeSi2 with the threshold energy Φ=0.62 eV was observed at 0.6-0.87 eV. The pronounced increase of a photoresponse corresponding mostly to an interband transition in β-FeSi2 was observed at 0.87-1.1 eV. The maximum dominated by a surface recombination process appeared around ∼1.2 eV. The surface recombination rate of ∼104 cm/s was estimated. The quantum efficiency was ∼60 % in the 0.8-1.0 µm wavelength region and ∼14 % around the band-gap of βFeSi2.

Ion beam analysis of the reaction of Pd with Si(100) and Si(111) at room temperature

1983 ◽  
Vol 124 (1) ◽  
pp. A1
Author(s):  
R.M. Tromp ◽  
E.J. Van Loenen ◽  
M. Iwami ◽  
R.G. Smeenk ◽  
F.W. Saris ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
Beam Analysis

Irradiation Cascade Threshold Energy in Gold

1970 ◽  
Vol 28 ◽  
pp. 408-409
Author(s):  
D.E. Weber ◽  
R.L. Hines
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Threshold Energy ◽  
Current Profile ◽  
Ion Energy ◽  
Weak Beam ◽  
Beam Image ◽  
Before And After ◽  
Uniform Current ◽  
Dose Levels

Xenon ions, Xe131, were used to bombard 200A thick, (100) single crystal gold film in a non-channeling direction at room temperature. The incident ion energy was In the 2-40 kev energy range. The ion beam had a uniform current profile which was monitored in two directions before and after the bombardment. The Ion dose levels were of order 1×1010/cm2.The resultant damage was viewed at room temperature in an Hitachi HU 11A electron microscope operated at lOOkev using 200 weak beam techniques. The micrographs of FIG. 1(a) and 1(b) are of the same area at different deviations. FIG. 1(a) represents the image of the damage at low deviation. The high deviation weak beam image is shown in FIG.

Solvent and Curing Effects on Diffusion at Polyimide Interfaces

1989 ◽  
Vol 153 ◽  
Author(s):  
S. F. Tead ◽  
E. J. Kramer ◽  
T. P. Russell ◽  
W. Volksen
Keyword(s):  
Glass Transition ◽  
Transition Temperature ◽  
Spin Coating ◽  
Room Temperature ◽  
Ion Beam ◽  
Complete Conversion ◽  
Thermally Activated ◽  
Post Annealing ◽  
Analysis Technique ◽  
Beam Analysis

AbstractInterdiffusion at interfaces between deuterated polyamic acid (d-PAA) and polyimide (PI) films was investigated with forward recoil spectrometry, an ion beam analysis technique. The PI films were prepared by spin - coating a solution of PAA on a silicon substrate, followed by an anneal at a temperature Ti, which produced partial or complete conversion of the PAA to PI. An overlayer of d-PAA was added in one set of samples by spin - coating from solution and in another set by transferring (in the absence of solvents) a dry d-PAA film onto the PI surface. The bilayer samples were then either annealed at a temperature Td or allowed to stand at room temperature. Bilayers prepared by spin - coating d-PAA from solution directly on partially cured PI films had interdiffusion distances w that decreased with increasing values of Ti to immeasurable levels by Ti = 200 °C. The decrease in w with increasing Ti is thought to be caused by a positive Flory parameter between PAA and PI which increases with the imide fraction in the PI film; the result is an increasing immiscibility between the swollen polymer layers. No interdiffusion occurred in the solventless - transfer samples for any combination of temperatures Ti or Td from room temperature up to 400 °C. Post - annealing of spin - coated bilayers at a temperature Td up to 400 °C was ineffective in producing any additional interdiffusion. Both of these results indicate that thermally activated interdiffusion (even for initially unimidized samples) does not exist in the absence of solvents, an effect attributed to the rapid increase of the glass transition temperature of the polymer with imidization.

Room Temperature Growth of Silicon Dioxide Using a Low Energy Ion Beam

1986 ◽  
Vol 75 ◽  
Author(s):  
S. S. Todorov ◽  
E. R. Fossum
Keyword(s):  
Silicon Dioxide ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Film Growth ◽  
Ion Beam ◽  
Silicon Surfaces ◽  
Ion Energy ◽  
Thermally Driven ◽  
Thin Oxide Films ◽  
Substrate Temperatures

AbstractUltra-thin films of silicon dioxide are formed on silicon surfaces at room temperature by direct bombardment with an oxygen-containing ion beam at energies of 150 eV or less. The process of film growth is studied.through ellipsometric measurements of their properties as a function of ion energy and dose, oxygen partial pressure and substrate temperature. Typical oxide thicknesses of the order of 50 Å are obtained by three minute or longer exposures to beams of current density 135 μA/cm2. Ion-beam grown oxides are compared to conventional thin oxide films grown at elevated temperatures and show the same stoichiometry. The growth rate decreases rapidly after a continuous oxide film has been formed. Performing the ion bombardment at elevated substrate temperatures leads to only small enhancement of the oxide growth indicating non-thermally driven reaction kinetics.

Discovery of Long Range Order in Thin (2-20 NM) SiO2 Films by Ion Beam Analysis

1998 ◽  
Vol 510 ◽  
Author(s):  
N. Herbots ◽  
V. Atluri ◽  
Q. B. Hurst ◽  
J. M. Shaw ◽  
S. Banerjee ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Ambient Air ◽  
Chemical Cleaning ◽  
Ion Beam Analysis ◽  
Ion Channeling ◽  
Oxidation Rates ◽  
Beam Analysis ◽  
Wet Chemical ◽  
20 Nm

AbstractSiO2 films, 2-20 nm thick, were grown on passivated, ordered Si(100) to correlate electrical properties and oxidation rates with processing for ultra-thin gate oxides. Ordered Si(l 00) (1 × 1) stable in ambient air was obtained at room temperature by wet chemical cleaning. The thickest oxides were grown by Rapid Thermal Oxidation at 850°C, the thinnest at room temperature. O was detected by Ion Beam Analysis (IBA) using a combination of ion channeling with the 3.05 MeV 16O(α,α)16O nuclear resonance. It then becomes possible to measure order in thin SiO2 by comparing the total amount of O from rotating random spectra to disordered O detected by ion channeling, and detect the alignment of O with the atoms in Si(100)

Ion beam analysis of the reaction of Pd with Si(100) and Si(111) at room temperature

1983 ◽  
Vol 124 (1) ◽  
pp. 1-25 ◽  
Author(s):  
R.M. Tromp ◽  
E.J. van Loenen ◽  
M. Iwami ◽  
R.G. Smeenk ◽  
F.W. Saris ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
Beam Analysis
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