Discovery of Long Range Order in Thin (2-20 NM) SiO2 Films by Ion Beam Analysis

1998 ◽  
Vol 510 ◽  
Author(s):  
N. Herbots ◽  
V. Atluri ◽  
Q. B. Hurst ◽  
J. M. Shaw ◽  
S. Banerjee ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Ambient Air ◽  
Chemical Cleaning ◽  
Ion Beam Analysis ◽  
Ion Channeling ◽  
Oxidation Rates ◽  
Beam Analysis ◽  
Wet Chemical ◽  
20 Nm

AbstractSiO2 films, 2-20 nm thick, were grown on passivated, ordered Si(100) to correlate electrical properties and oxidation rates with processing for ultra-thin gate oxides. Ordered Si(l 00) (1 × 1) stable in ambient air was obtained at room temperature by wet chemical cleaning. The thickest oxides were grown by Rapid Thermal Oxidation at 850°C, the thinnest at room temperature. O was detected by Ion Beam Analysis (IBA) using a combination of ion channeling with the 3.05 MeV 16O(α,α)16O nuclear resonance. It then becomes possible to measure order in thin SiO2 by comparing the total amount of O from rotating random spectra to disordered O detected by ion channeling, and detect the alignment of O with the atoms in Si(100)

Long Range Order in Ultra-Thin SiO2 Grown on Ordered Si(100)

1999 ◽  
Vol 567 ◽  
Author(s):  
Q.B. Hurst ◽  
N. Herbots ◽  
J.M. Shaw ◽  
M.M. Floyd ◽  
D.J. Smith ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Ambient Air ◽  
High Energy ◽  
Thermally Grown Oxide ◽  
Chemical Cleaning ◽  
Ion Channeling ◽  
Beam Analysis ◽  
Charge Analysis ◽  
Wet Chemical

ABSTRACTIn this paper, we investigate the correlation of electrical properties and structure of 1-4 nm thick SiO2 grown on H-passivated Si(100) for ultra-thin gate applications. Ordered (1×1) Si(100) stable in ambient air is obtained at room temperature by wet chemical cleaning. Ion Beam Analysis using a combination of ion channeling and 16O(α,α)16O nuclear resonance yields Si areal densities lower than that of a bulk-terminated Si crystal as calculated by Monte-Carlo simulations. This result indicates shadowing of Si substrate atoms by Si atoms in the thermally grown oxide. Detection of order by ion channeling is supported by Reflection High Energy Electron Diffraction (RHEED). C-V and I-V measurements are generally inconclusive for ultra-thin (1-2 nm) oxides because of leakage and breakdown. Surface charge analysis enables a comparison between ordered oxides and conventional oxides. The results are promising.

H-passivation of Si(100) By Wet Chemical Cleaning: Discovery of Ordering

1998 ◽  
Vol 513 ◽  
Author(s):  
V. Atluri ◽  
N. Herbots
Keyword(s):  
Ion Beam ◽  
Elastic Recoil ◽  
Signal To Noise ◽  
Chemical Cleaning ◽  
Elastic Recoil Detection ◽  
Ion Channeling ◽  
Atomic Force ◽  
Beam Analysis ◽  
Wet Chemical ◽  
First Time

ABSTRACTSi(100) is H-passivated via a modified pre-RCA cleaning followed by etching in HF:alcohol, to produce ordered (1 × 1) templates which desorb at low temperature (T ≥ 600°C). Four sets of 12 wafers, each set processed identically, are used to test reproducibility, and are characterized by Ion Beam Analysis (IBA), Tapping Mode Atomic Force Microscope (TMAFM), and Fourier Transform Infrared Spectroscopy (FTIR). The absolute coverage of oxygen and carbon is measured by ion channeling combined with nuclear resonance at 3.05 MeV for oxygen and 4.265 MeV for carbon, improving the signal to noise by a factor 10 for oxygen and by 120 for carbon. It is then possible for the first time to measure ordering of oxygen atoms with respect to the surface by comparing the amount of oxygen from rotating random spectra to the disordered oxygen measured by channeling. Hydrogen is measured via the elastic recoil detection (ERD) of 4He2+ at 2.8 MeV.Si(100) etched in HF:methanol after a modified preliminary RCA cleaning yields the cleanest surface. The data suggest that Si(100) passivated by HF in alcohol is terminated by an ordered hydroxide layer, which desorbs at lower temperatures than the more refractory Si02.

Ion beam analysis of the reaction of Pd with Si(100) and Si(111) at room temperature

1983 ◽  
Vol 124 (1) ◽  
pp. A1
Author(s):  
R.M. Tromp ◽  
E.J. Van Loenen ◽  
M. Iwami ◽  
R.G. Smeenk ◽  
F.W. Saris ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
Beam Analysis

Ion beam analysis of the reaction of Pd with Si(100) and Si(111) at room temperature

1983 ◽  
Vol 124 (1) ◽  
pp. 1-25 ◽  
Author(s):  
R.M. Tromp ◽  
E.J. van Loenen ◽  
M. Iwami ◽  
R.G. Smeenk ◽  
F.W. Saris ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
Beam Analysis

scholarly journals Evaluation of the sub-surface morphology and composition of gunshot residue using focussed ion beam analysis

2019 ◽  
Vol 297 ◽  
pp. 100-110 ◽  
Author(s):  
Nick Lucas ◽  
Kelsey E. Seyfang ◽  
Andrew Plummer ◽  
Michael Cook ◽  
K. Paul Kirkbride ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Ion Beam ◽  
Gunshot Residue ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Focussed Ion Beam

scholarly journals A New High-Throughput Focused MeV Ion-Beam Analysis Setup

Instruments ◽  
2021 ◽  
Vol 5 (1) ◽  
pp. 10
Author(s):  
Sören Möller ◽  
Daniel Höschen ◽  
Sina Kurth ◽  
Gerwin Esser ◽  
Albert Hiller ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Complete Analysis ◽  
Nuclear Reaction Analysis ◽  
Beam Optics ◽  
Single Measurement ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Technical Solutions

The analysis of material composition by ion-beam analysis (IBA) is becoming a standard method, similar to electron microscopy. A pool of IBA methods exists, from which the combination of particle-induced-X-ray emission (PIXE), particle induced gamma-ray analysis (PIGE), nuclear-reaction-analysis (NRA), and Rutherford-backscattering-spectrometry (RBS) provides the most complete analysis over the whole periodic table in a single measurement. Yet, for a highly resolved and accurate IBA analysis, a sophisticated technical setup is required integrating the detectors, beam optics, and sample arrangement. A new end-station developed and installed in Forschungszentrum Jülich provides these capabilities in combination with high sample throughput and result accuracy. Mechanical tolerances limit the device accuracy to 3% for RBS. Continuous pumping enables 5*10−8 mbar base pressure with vibration amplitudes < 0.1 µm. The beam optics achieves a demagnification of 24–34, suitable for µ-beam analysis. An in-vacuum manipulator enables scanning 50 × 50 mm² sample areas with 10 nm accuracy. The setup features the above-mentioned IBA detectors, enabling a broad range of analysis applications such as the operando analysis of batteries or the post-mortem analysis of plasma-exposed samples with up to 3000 discrete points per day. Custom apertures and energy resolutions down to 11 keV enable separation of Fe and Cr in RBS. This work presents the technical solutions together with the quantification of these challenges and their success in the form of a technical reference.

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