Zinc Bis(Amide) Compounds Evaluated as Designed Precursors for Site-Selective P-type Doping of ZnSe

ABSTRACTZinc selenide doped with nitrogen deposited by organometallic vapor phase epitaxy (OMVPE) is one example which leads to a material that produces a blue emission. However, the effective incorporation of the nitrogen dopant into the zinc selenide lattice has not yet resulted in the demanded efficiency. One potential solution involves the design of a precursor introducing the nitrogen dopant bonded to zinc that survives the thermal decomposition process. Several new zinc bis(amide) compounds with the general formula Zn[N(R)(R′)]2 have been synthesized. Investigations into the thermal decomposition mechanisms of these compounds have provided insight into the potential usefulness of the designed precursor in the preparation of ZnSe:N.

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Highly p-type carbon-doped InGaAs grown by atmospheric pressure organometallic vapor-phase epitaxy

Journal of Crystal Growth ◽

10.1016/s0022-0248(98)00397-2 ◽

1998 ◽

Vol 192 (1-2) ◽

pp. 47-55 ◽

Cited By ~ 1

Author(s):

A Tandon ◽

R.M Cohen

Keyword(s):

Vapor Phase ◽

Atmospheric Pressure ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Carbon Doped ◽

P Type

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Growth of NLO Chalcopyrite Materials by Omvpe

MRS Proceedings ◽

10.1557/proc-484-507 ◽

1997 ◽

Vol 484 ◽

Cited By ~ 3

Author(s):

M. L. Timmons ◽

K. J. Bachmann

Keyword(s):

Vapor Phase ◽

Minority Carrier ◽

Organometallic Vapor Phase Epitaxy ◽

Lattice Match ◽

Mid Infrared ◽

Figures Of Merit ◽

Carrier Lifetimes ◽

Minority Carrier Lifetimes ◽

Infrared Materials ◽

P Type

AbstractThis paper describes the application of organometallic vapor phase epitaxy to the growth of II-1V-V2 chalcopyrite materials that have high figures of merit for nonlinear optical (NLO) applications. ZnGeAs2, although not a particularly interesting NLO material, is used as a model for the growth of ZnGeP2, which is. Both compounds, as well as others, have been successfully grown by vapor phase on III-V substrates that provide a close lattice match. Doping studies using Group II and VI elements have been undertaken to control the p-type conductivity found in both compounds. Except for the possible case of indium, the results of these experiments are less than encouraging. Minority-carrier lifetimes of 150 ns have been measured in ZnGeAs2.The results of this work are used to make projections about the growth of CdGeAs2. CdGeAs2 is promising for the next generation of NLO mid-infrared materials if an absorption band that occurs at about 5 μm can be reduced. The growth projections suggest that this compound will be difficult to grow epitaxially and has no III-V substrate that provides a close lattice match. Mixing CdGeAs2 with other II-IV-V2 materials may offer solutions to the substrate problem. The defect properties of CdGeAs2 have not, to our knowledge, been studied.

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Coherent Anti-Stokes Raman Scattering Measurements of Group V Hydride and Trimethylgallium Decomposition in Organometallic Vapor Phase Epitaxy

MRS Proceedings ◽

10.1557/proc-131-91 ◽

1988 ◽

Vol 131 ◽

Author(s):

R. Löckerath ◽

H. J. Koss ◽

P. Tommack ◽

W. Richter ◽

P. Balk

Keyword(s):

Thermal Decomposition ◽

Raman Scattering ◽

Vapor Phase ◽

Gaas Surface ◽

Organometallic Vapor Phase Epitaxy ◽

Experimental Conditions ◽

Group V ◽

Scattering Measurements ◽

Trimethyl Gallium ◽

Anti Stokes

ABSTRACTThe thermal decomposition of AsH3 and TMG is measured insitu under different experimental conditions. Simultaneously the production of H2, CH4 and C2H6 is observed. The data indicate a situation where AsH3 is only partially decomposed at the GaAs surface. The hydrogen released removes additional CH3 groups from the trimethyl-gallium (TMG) molecule, enhances the decomposition of TMG, and thereby forms methane.

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Substrate Misorientation Effects on Epitaxial GaInAsSb

MRS Proceedings ◽

10.1557/proc-484-37 ◽

1997 ◽

Vol 484 ◽

Cited By ~ 1

Author(s):

C. A. Wang ◽

H. K. Choi ◽

D. C. Oakley ◽

G. W. Charache

Keyword(s):

Vapor Phase ◽

External Quantum Efficiency ◽

Optical Quality ◽

Organometallic Vapor Phase Epitaxy ◽

Full Width ◽

Half Maximum ◽

Photoluminescence Spectra ◽

P Type ◽

Lattice Matched

AbstractThe effect of substrate misorientation on the growth of GaInAsSb was studied for epilayers grown lattice matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy. The substrates were (100) misoriented 2 or 6° toward (110), (111)A, or (111)B. The surface is mirror-like and featureless for layers grown with a 6° toward (111)B misorientation, while a slight texture was observed for layers grown on all other misorientations. The optical quality of layers, as determined by the full width at half-maximum of photoluminescence spectra measured at 4K, is significantly better for layers grown on substrates with a 6° toward (111)B misorientation. The incorporation of Zn as a p-type dopant in GaInAsSb is about 1.5 times more efficient on substrates with 60 toward (111)B misorientation compared to 2° toward (110) misorientation. The external quantum efficiency of thermophotovoltaic devices is not, however, significantly affected by substrate misorientation.

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Infra-Red Photodiodes in Hg1-xCdxTe Grown by OMVPE

MRS Proceedings ◽

10.1557/proc-216-87 ◽

1990 ◽

Vol 216 ◽

Author(s):

K.K. Parat ◽

N.R. Taskar ◽

H. Ehsani ◽

I.B. Bhat ◽

S.K. Ghandri

Keyword(s):

Vapor Phase ◽

Diffusion Barrier ◽

Vapor Phase Epitaxy ◽

Device Fabrication ◽

Organometallic Vapor Phase Epitaxy ◽

Infra Red ◽

Fabrication And Characterization ◽

Group Ii ◽

P Type

ABSTRACTHg1-xCdxTe layers, grown by the organometallic vapor phase epitaxy (OMVPE), are p-type with carrier concentrations around 4 × 1016/cm3 due to the Group II vacancies in them. Following a Hg saturated anneal at 220°C, these layers become n-type with carrier concentrations around 4 × 1014/cm3. In order to fabricate p-n junction diodes, Hg1-xCdxTe layers were grown with a 0.5–0.8 μm thick CdTe cap. By opening windows in this CdTe cap, the underlying Hg1-xCdxTe Te layer was annealed in a selective manner, thus forming planar p-n junctions. The CdTe cap, which is used as the diffusion barrier for Hg during the selective anneal, also served as the junction passivant for the photodiodes. Details of device fabrication and characterization are presented in this paper.

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Nature and Excitation Mechanism of the Emission-dominating Minority Eu-center in GaN Grown by Organometallic Vapor-phase Epitaxy

MRS Proceedings ◽

10.1557/opl.2011.1049 ◽

2011 ◽

Vol 1342 ◽

Cited By ~ 4

Author(s):

Jonathan Poplawsky ◽

Nathaniel Woodward ◽

Atsushi Nishikawa ◽

Yasufumi Fujiwara ◽

Volkmar Dierolf

Keyword(s):

Electron Beam ◽

Laser Irradiation ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Electron Hole ◽

Electron Beam Excitation ◽

The Difference ◽

Site Selective ◽

Pair Excitation

ABSTRACTIn-situdoped Eu ions in GaN grown by Organometallic Vapor-phase Epitaxy (OMVPE) at different pressures were investigated under different excitation methods and through the use of the following experimental techniques: (1) resonant site-selective laser irradiation (2) electron beam excitation, and (3) a dual excitation using a combination of electron beam and laser irradiation. With these means, we have examined the difference in the excitation pathways that result from resonant laser and electron hole (e-h) pair excitation of Eu ions for two different distinct incorporation sites, which are responsible for most of the luminescence. We have obtained clear evidence that e-h pairs do not have the ability to excite all of the ions and that there is excitation trapping by defects involved in the Eu excitation.

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