Substrate Misorientation Effects on Epitaxial GaInAsSb

AbstractThe effect of substrate misorientation on the growth of GaInAsSb was studied for epilayers grown lattice matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy. The substrates were (100) misoriented 2 or 6° toward (110), (111)A, or (111)B. The surface is mirror-like and featureless for layers grown with a 6° toward (111)B misorientation, while a slight texture was observed for layers grown on all other misorientations. The optical quality of layers, as determined by the full width at half-maximum of photoluminescence spectra measured at 4K, is significantly better for layers grown on substrates with a 6° toward (111)B misorientation. The incorporation of Zn as a p-type dopant in GaInAsSb is about 1.5 times more efficient on substrates with 60 toward (111)B misorientation compared to 2° toward (110) misorientation. The external quantum efficiency of thermophotovoltaic devices is not, however, significantly affected by substrate misorientation.

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INFLUENCE OF THE LATTICE MISMATCH ON THE PHOTOLUMINESCENCE BAND-TAIL PARAMETER IN InGaAsP/InP HETEROSTRUCTURES

Modern Physics Letters B ◽

10.1142/s021798490100235x ◽

2001 ◽

Vol 15 (17n19) ◽

pp. 708-711

Author(s):

A. IRIBARREN

Keyword(s):

Linear Dependence ◽

Lattice Mismatch ◽

Semiconductor Heterostructures ◽

Full Width ◽

Half Maximum ◽

Photoluminescence Spectra ◽

Band Tail ◽

Photoluminescence Band ◽

Grown Layer

The compositional inhomogeneities in semiconductor heterostructures leads to diminishing the quality of the grown layer which reflects in the shape of the rocking curves, where the full width at half maximum (FWHM) of the peaks is larger. Consequently, the quality of the layers characterized by an increase of the disorder also reflects in the band-tail parameter ( E 0) of the photoluminescence spectra. A linear dependence of the FWHM with the lattice mismatch (Δa) was found. The dependence of E 0 as a function of FWHM are presented. It was found that E 0 keep constant up to Δ a / a ≅ 0.15% and FWHM ≅ 50" from where it begins to increase.

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GalnAsSb Materials for Thermophotovoltaics

MRS Proceedings ◽

10.1557/proc-450-55 ◽

1996 ◽

Vol 450 ◽

Cited By ~ 4

Author(s):

C. A. Wang ◽

G. W. Turner ◽

M. J. Manfra ◽

H. K. Choi ◽

D. L. Spears

Keyword(s):

Room Temperature ◽

Molecular Beam ◽

Hole Concentration ◽

Organometallic Vapor Phase Epitaxy ◽

Room Temperature Photoluminescence ◽

P Type ◽

First Time ◽

Lattice Matched ◽

Comparable Quality ◽

Peak Emission

ABSTRACTGai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. These epilayers have a mirror-like surface morphology, and exhibit room temperature photoluminescence (PL) with peak emission wavelengths (λP,300K) out to 2.4 μm. 4K PL spectra have a full width at half-maximum of 11 meV or less for λP,4K < 2.1 μm (λP,300K = 2.3 μm). Nominally undoped layers are p-type with typical 300K hole concentration of 9 × 1015 cm−3 and mobility ∼ 450 to 580 cm2/V-s for layers grown at 575°C. Doping studies are reported for the first time for GalnAsSb layers doped n type with diethyltellurium and p type with dimethylzinc. Test diodes of p-GalnAsSb/n-GaSb have an ideality factor that ranges from 1.1 to 1.3. A comparison of electrical, optical, and structural properties of epilayers grown by molecular beam epitaxy indicates OMVPE-grown layers are of comparable quality.

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Photoluminescence Characterization of SiGe/Si Quantum-Well Wire Structures

MRS Proceedings ◽

10.1557/proc-379-171 ◽

1995 ◽

Vol 379 ◽

Author(s):

S. Nilsson ◽

H. P. Zeindl ◽

A. Wolff ◽

K. Pressel

Keyword(s):

Quantum Well ◽

Room Temperature ◽

Molecular Beam ◽

Optical Quality ◽

Photoluminescence Spectra ◽

Single Quantum Well ◽

Quantum Well Wire ◽

Carbon Interstitial

ABSTRACTLow-temperature photoluminescence measurements were performed in order to probe the optical quality of SiGe/Si quantum-well wire structures fabricated by electron-beam lithography and subsequent reactive ion etching, having the patterned polymethylmethacrylate resist as an etch mask. In addition, one set of quantum-well wire structures was post-treated by means of annealing in a hydrogen environment. Our results show that even for the smallest wires of about 100nm in width, the wires exhibit phonon-resolved photoluminescence spectra, similar to that from the molecular beam eptitaxially grown SiGe single quantum well which was used as starting material for the patterning process. After the patterning process a new sharp peak appears in the photoluminescence spectra at 0.97eV in photon energy. Our investigation suggests that this feature is introduced by damage during the patterning process and most probably identical to the G-line, which previously was identified as originating from the dicarbon centre (substitutional carbon-interstitial carbon) in Si. This centre is known to be a very common endproduct of irradiating Si near room temperature which is the case at our patterning process.

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The Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVT

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.77 ◽

2013 ◽

Vol 740-742 ◽

pp. 77-80

Author(s):

Jung Young Jung ◽

Sang Il Lee ◽

Mi Seon Park ◽

Doe Hyung Lee ◽

Hee Tae Lee ◽

...

Keyword(s):

Crystal Growth ◽

Temperature Gradient ◽

Single Crystals ◽

Crystal Quality ◽

Full Width ◽

Half Maximum ◽

Radial Temperature Gradient ◽

Radial Temperature ◽

Better Than

The present research was focused to investigate the effect of internal crucible design that influenced the 4H-SiC crystal growth onto a 6H-SiC seed by PVT method. The crucible design was modified to produce a uniform radial temperature gradient in the growth cell. The seed attachment was also modified with a use of polycrystalline SiC plate. The crystal quality of 4H-SiC single crystals grown in modified crucible and grown with modified seed attachment was revealed to be better than that of crystal grown in conventional crucible. The full width at half maximum (FWHM) values of grown SiC crystals in the conventional crucible, the modified seed attachment and the modified crucible were 285 arcsec, 134 arcsec and 128 arcsec, respectively. The micropipe density (MPD) of grown SiC crystals in the conventional crucible, the modified seed attachment and the modified crucible were 101ea/cm^2, 81ea/cm^2 and 42ea/cm^2, respectively.

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Effects of Sputtering Pressure on (ZnO)x(InN)1-x Crystal Film Growth at 450°C

Materials Science Forum ◽

10.4028/www.scientific.net/msf.941.2093 ◽

2018 ◽

Vol 941 ◽

pp. 2093-2098

Author(s):

Naho Itagaki ◽

Kazuto Takeuchi ◽

Nanoka Miyahara ◽

Kouki Imoto ◽

Hyun Woong Seo ◽

...

Keyword(s):

Film Growth ◽

Rf Magnetron Sputtering ◽

Full Width ◽

Half Maximum ◽

X Ray Diffraction ◽

X Ray ◽

Crystal Film ◽

Crystal Films ◽

Sputtering Pressure

We studied effects of sputtering pressure on growth of (ZnO)x(InN)1-xcrystal films deposited at 450°C by rf magnetron sputtering. Epitaxial growth of (ZnO)x(InN)1-xfilms was realized on single-crystalline ZnO template. X-ray diffraction measurements show that full width at half maximum of the rocking curves from the (101) plane of the films reaches minimum value of 0.11º at 0.5 Pa. The sputtering gas pressure is a key tuning knob for controlling the crystal quality of ZION films.

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AMMONO method of BN, AlN and GaN synthesis and crystal growth.

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300000971 ◽

1998 ◽

Vol 3 ◽

Cited By ~ 37

Author(s):

R. Dwili˜ski ◽

R. Doradzi˜ski ◽

J. Garczy˜ski ◽

L. Sierzputowski ◽

M. Palczewska ◽

...

Keyword(s):

Reaction Rate ◽

Full Width Half Maximum ◽

Full Width ◽

Half Maximum ◽

Helium Temperature ◽

Photoluminescence Spectra ◽

Paramagnetic Resonance ◽

Temperature And Pressure ◽

Supercritical Ammonia ◽

Electron Paramagnetic

Microcrystals of BN, AlN and GaN were obtained by the AMMONO method, in which nitridization of metal occurs in supercritical ammonia, at relatively low temperature and pressure conditions (below 550°C and 5 kbar). The reaction rate was regulated by the amount of mineralizers, i.e. alkali metal amides.All crystals obtained by AMMONO method revealed intense and homogenous luminescence. Significant improvement of the optical properties was observed for crystals grown in the presence of Rare Earth elements. For such GaN crystals, helium temperature photoluminescence spectra were dominated by near-band-gap recombination. Exciton lines were extremely narrow, with full-width half-maximum (FWHM) as low as 1 meV. The concentration of uncompensated shallow donors in AMMONO GaN determined by electron paramagnetic resonance measurements was below 5×1015 cm−3.

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