Neodymium-doped GaAs Light-emitting Diodes

1996 ◽  
Vol 422 ◽  
Author(s):  
S. J. Chang
Keyword(s):  
Quantum Efficiency ◽  
Breakdown Voltage ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Minority Carriers

Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into a GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 μm regions. These electroluminescence signals correspond to the transitions from Nd3+4F3/2 state to the Nd3+4I9/2, 4I1/2, and 4I13/2 states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5 × 10−7.

scholarly journals Phenylalkylammonium passivation enables perovskite light emitting diodes with record high-radiance operational lifetime: the chain length matters

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yuwei Guo ◽  
Sofia Apergi ◽  
Nan Li ◽  
Mengyu Chen ◽  
Chunyang Yin ◽  
...  
Keyword(s):  
Chain Length ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Surface Defects ◽  
Theoretical Modelling ◽  
Ion Migration ◽  
Light Emitting ◽  
Operational Lifetime ◽  
Chain Lengths

AbstractPerovskite light emitting diodes suffer from poor operational stability, exhibiting a rapid decay of external quantum efficiency within minutes to hours after turn-on. To address this issue, we explore surface treatment of perovskite films with phenylalkylammonium iodide molecules of varying alkyl chain lengths. Combining experimental characterization and theoretical modelling, we show that these molecules stabilize the perovskite through suppression of iodide ion migration. The stabilization effect is enhanced with increasing chain length due to the stronger binding of the molecules with the perovskite surface, as well as the increased steric hindrance to reconfiguration for accommodating ion migration. The passivation also reduces the surface defects, resulting in a high radiance and delayed roll-off of external quantum efficiency. Using the optimized passivation molecule, phenylpropylammonium iodide, we achieve devices with an efficiency of 17.5%, a radiance of 1282.8 W sr−1 m−2 and a record T50 half-lifetime of 130 h under 100 mA cm−2.

An oligocarbazole-encapsulated heteroleptic red iridium complex for solution-processed nondoped phosphorescent organic light-emitting diodes with over 10% external quantum efficiency

2017 ◽  
Vol 5 (23) ◽  
pp. 5749-5756 ◽  
Author(s):  
Lingcheng Chen ◽  
Shumeng Wang ◽  
Zhimin Yan ◽  
Junqiao Ding ◽  
Lixiang Wang
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Iridium Complex ◽  
Solution Processed ◽  
Light Emitting ◽  
Organic Light

By fully encapsulating the heteroleptic red Ir complex with carbazole dendrons, solution-processed nondoped electrophosphorescent devices reveal over 10% EQE.

Size-independent peak external quantum efficiency (>2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm

2021 ◽  
Vol 119 (8) ◽  
pp. 081102
Author(s):  
Panpan Li ◽  
Hongjian Li ◽  
Haojun Zhang ◽  
Cheyenne Lynsky ◽  
Mike Iza ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Emission Wavelength ◽  
Light Emitting

scholarly journals An external quantum efficiency of >20% from solution-processed poly(dendrimer) organic light-emitting diodes

2018 ◽  
Vol 2 (1) ◽  
Author(s):  
Fatemeh Maasoumi ◽  
Ross D. Jansen-van Vuuren ◽  
Paul E. Shaw ◽  
Emma V. Puttock ◽  
Ravi Chandra Raju Nagiri ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Solution Processed ◽  
Light Emitting ◽  
Organic Light
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