Current Issues and Future Trends in CMP Consumables for Oxide and Metal Polish

1996 ◽  
Vol 427 ◽  
Author(s):  
M. Moinpour ◽  
A. Philipossian
Keyword(s):  
Semiconductor Industry ◽  
Chemical Mechanical Planarization ◽  
Future Trends ◽  
Process Technology ◽  
Shallow Trench Isolation ◽  
Current Trends ◽  
Front End ◽  
Technological Advantage ◽  
Trench Isolation ◽  
Major Process

IntroductionThe recent advent of Chemical Mechanical Planarization (CMP) as a major process technology has had a significant impact on the semiconductor industry. Oxide CMP is a technology enabler for logic and DRAM devices with feature sizes less than (or equal to) 0.75 micrometer [1]. Similarly, tungsten CMP has become a technology enabler for 0.35 micron devices [2,3], and current trends indicate that it will continue to play a major role in future generations of IC technologies [4,5]. CMP can also provide a technological advantage in front-end process modules such as Shallow Trench Isolation [6].

Advances in Chemical-Mechanical Planarization

MRS Bulletin ◽  
2002 ◽  
Vol 27 (10) ◽  
pp. 743-751 ◽  
Author(s):  
Rajiv K. Singh ◽  
Rajeev Bajaj
Keyword(s):  
Surface Topography ◽  
Process Integration ◽  
Semiconductor Industry ◽  
Chemical Mechanical Planarization ◽  
Shallow Trench Isolation ◽  
Trench Isolation ◽  
Fundamental Understanding ◽  
Copper Polishing ◽  
Future Growth

AbstractThe primary aim of this issue of MRS Bulletin is to present an overview of the materials issues in chemical–mechanical planarization (CMP), also known as chemical–mechanial polishing, a process that is used in the semiconductor industry to isolate and connect individual transistors on a chip. The CMP process has been the fastest-growing semiconductor operation in the last decade, and its future growth is being fueled by the introduction of copper-based interconnects in advanced microprocessors and other devices. Articles in this issue range from providing a fundamental understanding of the CMP process to the latest advancements in the field. Topics covered in these articles include an overview of CMP, fundamental principles of slurry design, understanding wafer–pad–slurry interactions, process integration issues, the formulation of abrasive-free slurries for copper polishing, understanding surface topography issues in shallow trench isolation, and emerging applications.

Shallow Trench Isolation Chemical Mechanical Planarization: A Review

2015 ◽  
Vol 4 (11) ◽  
pp. P5029-P5039 ◽  
Author(s):  
Ramanathan Srinivasan ◽  
Pradeep VR Dandu ◽  
S. V. Babu
Keyword(s):  
Chemical Mechanical Planarization ◽  
Shallow Trench Isolation ◽  
Trench Isolation

Electrical AFM Measurements for Evaluation of Nitride Erosion in Shallow Trench Isolation Chemical Mechanical Planarization

2004 ◽  
Vol 838 ◽  
Author(s):  
Yordan Stefanov ◽  
Tino Ruland ◽  
Udo Schwalke
Keyword(s):  
Chemical Mechanical Planarization ◽  
Tunneling Current ◽  
Silicon Surfaces ◽  
Nanometer Scale ◽  
Shallow Trench Isolation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Trench Isolation ◽  
Clear Identification ◽  
Non Destructive

ABSTRACTThis article proposes a new application of tunneling current measurements Atomic Force Microscopy (AFM) for evaluation of silicon nitride stop-layer erosion in Shallow Trench Isolation (STI) Chemical Mechanical Planarization (CMP). Simultaneous topographical and electrical AFM measurements allow a clear identification of ‘open’ silicon surfaces on nanometer scale by enhanced tunneling currents in those areas. The measurement technique is non-destructive and can be successfully implemented for process control.

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