Growth of Low-Temperature Polycrystalline Si Film by Direct Negative Si Ion Beams

AbstractPolycrystalline Si (Poly-Si) films were successfully grown at temperature less than 500 °C by using a direct Si ion beam deposition technique. In this process, the ion beam energy of Si- is directly coupled to the formation of the films. High substrate temperature (>600 °C), normally required for conventional CVD techniques, has been a major barrier for the Poly-Si Thin Film Transistor Liquid Crystal Display (TFT LCD) which uses a glass substrate. Thus, the ability to produce Poly-Si film below the glass transition temperature and to control the grain size will make this direct Si- ion beam deposition process a potential alternative technique for future TFT LCD. The grain size dependence on the ion beam energy and substrate temperature was investigated using a Transmission Electron Microscope (TEM). The grain size could be controlled from 0.1 μm to 1 μm at ion beam energies from 10 to 50 eV with a substrate temperature less than 500 °C. The resistivity of the as-deposited film was of the order of 100 Ωcm due to in-situ doping effect.

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Grain size of nanocrystalline YSZ buffer layers fabricated by ion beam deposition

Physica C Superconductivity ◽

10.1016/j.physc.2011.05.050 ◽

2011 ◽

Vol 471 (21-22) ◽

pp. 770-773 ◽

Cited By ~ 1

Author(s):

F. Feng ◽

K. Shi ◽

Z. Wang ◽

B.-J. Yan ◽

Z.-J. Zhao ◽

...

Keyword(s):

Grain Size ◽

Ion Beam ◽

Buffer Layers ◽

Ion Beam Deposition ◽

Beam Deposition

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The influence of substrate temperature during ion beam deposition on the diamond-like or graphitic nature of carbon films

Diamond and Related Materials ◽

10.1016/0925-9635(93)90069-e ◽

1993 ◽

Vol 2 (2-4) ◽

pp. 285-290 ◽

Cited By ~ 45

Author(s):

Y. Lifshitz ◽

G.D. Lempert ◽

S. Rotter ◽

I. Avigal ◽

C. Uzan-Saguy ◽

...

Keyword(s):

Substrate Temperature ◽

Ion Beam ◽

Carbon Films ◽

Ion Beam Deposition ◽

Influence Of Substrate ◽

Beam Deposition

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Influence of On-Stage Control Parameters on Patterning in theFocused Ion Beam Deposition Process

Journal of the Korean Physical Society ◽

10.3938/jkps.53.2596 ◽

2008 ◽

Vol 53 (9(5)) ◽

pp. 2596-2602

Author(s):

JoonHyun Kim ◽

Youn-Jea Kim

Keyword(s):

Ion Beam ◽

Deposition Process ◽

Control Parameters ◽

Ion Beam Deposition ◽

Beam Deposition

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Carbon Nitride Formation by Plasma Assisted Ion Beam Deposition

MRS Proceedings ◽

10.1557/proc-396-545 ◽

1995 ◽

Vol 396 ◽

Cited By ~ 1

Author(s):

G.S. Tompa ◽

I.H. Murzin ◽

S.I. Kim ◽

Y.O Ahn ◽

B. Gallois ◽

...

Keyword(s):

Beam Energy ◽

Carbon Nitride ◽

Ion Beam ◽

Nitrogen Concentration ◽

Plasma Source ◽

Diagnostic Techniques ◽

Rf Plasma ◽

Ion Beam Deposition ◽

Optical And Mechanical Properties ◽

Beam Deposition

AbstractTheoretical works have indicated that carbon nitride, in a β-C4N4 phase, would have optical and mechanical properties comparable to or exceeding those of diamond. In this effort, the formation of carbon nitride thin films was investigated using a Plasma Assisted Ion Beam Deposition (PAIBD). In this technique, a C- ion beam combined with a N2 or NH3 RF plasma source is used to synthesize carbon nitride films. These films were investigated as a function of both C- ion beam energy and the power of the plasma source. The C- ion energy was found to be a key parameter in the formation of carbon nitride. The films were evaluated by a variety of diagnostic techniques including Raman, AES, XRD and FTIR. Analysis confirms high nitrogen concentration in the synthesized films and the major portion of carbon being single bonds in the sp3 bond configuration, which is a characteristic of the tetrahedral -C3N4 phase. Tribology tests confirmed that the friction coefficient and the wear rate are comparable to diamond. The results show that the higher C- ion beam energy (-150 eV) forms insulating films with the highest single bond percentages in the range studied. We believe beam energy control is critical to the types of bonds formed.

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Energy Distribution of Secondary Particles in Ion Beam Deposition Process of Ag: Experiment, Calculation and Simulation

Contributions to Plasma Physics ◽

10.1002/ctpp.201510015 ◽

2015 ◽

Vol 55 (10) ◽

pp. 737-746 ◽

Cited By ~ 21

Author(s):

C. Bundesmann ◽

R. Feder ◽

T. Lautenschläger ◽

H. Neumann

Keyword(s):

Energy Distribution ◽

Ion Beam ◽

Deposition Process ◽

Secondary Particles ◽

Ion Beam Deposition ◽

Beam Deposition

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Growth of Co ON Ag(100): A Comparison of Ultra Low Energyion Beam Deposition and Thermal Deposition

MRS Proceedings ◽

10.1557/proc-585-9 ◽

1999 ◽

Vol 585 ◽

Author(s):

B. Degroote ◽

J. Dekoster ◽

S. Degroote ◽

H. Pattyn ◽

A. Vantomme ◽

...

Keyword(s):

Substrate Temperature ◽

Ion Beam ◽

Low Energy ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Preferential Growth ◽

Thermal Deposition ◽

Ion Beam Deposition ◽

Ag Substrate ◽

Beam Deposition

AbstractWe have investigated the growth of Co deposited on Ag(100) with ultra low energy ion beam deposition. The preferred sites of nucleation, the island densities and heights are determined with scanning tunneling microscopy. Submonolayers of Co were ion beam deposited at 300 K using energies between 5 and 30 eV. Preferential growth of islands on the upper side of the mono-atomic Ag steps (i.e. step decoration) is observed for deposition energies of 5 and 15 eV. In addition, 3–4 ML deep holes are formed in the Ag substrate for deposition at 5 eV. At higher deposition energies, the number of holes per surface area decreases. The results are compared with experiments on thermal deposition of Co on Ag(100) as a function of substrate temperature, performed in a previous study.

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Ion Beam Deposition of Materials At 40–200 Ev: Effect of Ion Energy And Substrate Temperature On Interface, Thin Film And Damage Formation

MRS Proceedings ◽

10.1557/proc-51-369 ◽

1985 ◽

Vol 51 ◽

Cited By ~ 1

Author(s):

N. Herbots ◽

B.R. Appleton ◽

S.J. Pennycook ◽

T.S. Noggle ◽

R.A. Zuhr

Keyword(s):

Substrate Temperature ◽

Ion Beam ◽

Analytical Techniques ◽

X Ray Diffraction ◽

Ion Energy ◽

Ion Channeling ◽

Ion Beam Deposition ◽

Si Films ◽

Highly Uniform ◽

Beam Deposition

ABSTRACTIon beam deposition (IBD), the process whereby magnetically analyzed ions are directly deposited on single crystal substrates, has been studied for 74Ge and 30Si ions on Si(100) and Ge(100). The effects of sputtercleaning prior to deposition and substrate temperature during deposition were investigated. Three analytical techniques were systematically used to obtain information on the deposited films: (1) Rutherford backscattering combined with ion channeling, (2) cross-section TEM, and (3) Seeman-Bohlin X-ray diffraction. In the energy range explored (40–200 eV), the width of the interface between the IBD film and the substrate was found to be always less than 1 nm. Each IBD layer was highly uniform in thickness and composition for deposition temperatures from 300 K to 900 K. Without prior sputter-cleaning and annealing of the Si(100) and Ge(100) substrates, no epitaxy was observed. UHV conditions were found to be a requirement in order to grow crystalline Si films presenting bulk-like density. This was not the case for Ge films which showed bulk-like density for IBD at higher pressures. Results on the first Si/Ge superstructure grown by IBD are also shown.

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Higher nitrides of hafnium, zirconium, and titanium synthesized by dual ion beam deposition

Journal of Materials Research ◽

10.1557/jmr.1986.0442 ◽

1986 ◽

Vol 1 (3) ◽

pp. 442-451 ◽

Cited By ~ 96

Author(s):

B.O. Johansson ◽

H.T.G. Hentzell ◽

J.M.E. Harper ◽

J.J. Cuomo

Keyword(s):

Noble Gas ◽

Ion Beam ◽

Molecular Nitrogen ◽

Deposition Process ◽

Nitride Phase ◽

Ion Beam Deposition ◽

Wide Range ◽

Nitrogen Ion ◽

Phase Transmission ◽

Beam Deposition

We report the preparation and properties of higher nitrides of Hf, Zr, and Ti synthesized by dual ion beam deposition. For Hf and Zr, evidence is given for the existence of a metastable nitride phase with composition of approximately Hf3 N4 and Zr3 N4. These two materials are insulating and transparent straw colored, in contrast to the well-known mononitrides, which are shiny, gold colored, and highly conducting. For Ti-N we do not reach as high an N content and do not obtain an insulating, transparent phase. The higher nitrides of Hf and Zr are synthesized under energetic nitrogen ion bombardment (200 e V) of a growing film and do not form in the presence of molecular nitrogen gas alone. Several variations of the ion beam deposition process are used to obtain a wide range of film composition and to study the transition from the mononitride to the higher nitride phase. Transmission electron diffraction shows the structure of Hf3N4 and Zr3N4 to be very close to the Bl (NaCl) structure of the mononitrides, but with a slight rhombohedral distortion. Additional evidence from noble gas incorporation (Ne, Ar, and Xe) supports a model of these higher nitrides as containing a large number of vacancies on the metal atom sites.

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