Substrate temperature dependence of homoepitaxial growth of Si using mass selected ion beam deposition

AbstractWe have investigated the growth of Co deposited on Ag(100) with ultra low energy ion beam deposition. The preferred sites of nucleation, the island densities and heights are determined with scanning tunneling microscopy. Submonolayers of Co were ion beam deposited at 300 K using energies between 5 and 30 eV. Preferential growth of islands on the upper side of the mono-atomic Ag steps (i.e. step decoration) is observed for deposition energies of 5 and 15 eV. In addition, 3–4 ML deep holes are formed in the Ag substrate for deposition at 5 eV. At higher deposition energies, the number of holes per surface area decreases. The results are compared with experiments on thermal deposition of Co on Ag(100) as a function of substrate temperature, performed in a previous study.

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Ion Beam Deposition of Materials At 40–200 Ev: Effect of Ion Energy And Substrate Temperature On Interface, Thin Film And Damage Formation

MRS Proceedings ◽

10.1557/proc-51-369 ◽

1985 ◽

Vol 51 ◽

Cited By ~ 1

Author(s):

N. Herbots ◽

B.R. Appleton ◽

S.J. Pennycook ◽

T.S. Noggle ◽

R.A. Zuhr

Keyword(s):

Substrate Temperature ◽

Ion Beam ◽

Analytical Techniques ◽

X Ray Diffraction ◽

Ion Energy ◽

Ion Channeling ◽

Ion Beam Deposition ◽

Si Films ◽

Highly Uniform ◽

Beam Deposition

ABSTRACTIon beam deposition (IBD), the process whereby magnetically analyzed ions are directly deposited on single crystal substrates, has been studied for 74Ge and 30Si ions on Si(100) and Ge(100). The effects of sputtercleaning prior to deposition and substrate temperature during deposition were investigated. Three analytical techniques were systematically used to obtain information on the deposited films: (1) Rutherford backscattering combined with ion channeling, (2) cross-section TEM, and (3) Seeman-Bohlin X-ray diffraction. In the energy range explored (40–200 eV), the width of the interface between the IBD film and the substrate was found to be always less than 1 nm. Each IBD layer was highly uniform in thickness and composition for deposition temperatures from 300 K to 900 K. Without prior sputter-cleaning and annealing of the Si(100) and Ge(100) substrates, no epitaxy was observed. UHV conditions were found to be a requirement in order to grow crystalline Si films presenting bulk-like density. This was not the case for Ge films which showed bulk-like density for IBD at higher pressures. Results on the first Si/Ge superstructure grown by IBD are also shown.

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Effect of substrate temperature on residual stress of ZnO thin films prepared by ion beam deposition

Electronic Materials Letters ◽

10.1007/s13391-012-1091-5 ◽

2012 ◽

Vol 8 (1) ◽

pp. 27-32 ◽

Cited By ~ 19

Author(s):

Ju-Won Jeon ◽

Myoung Kim ◽

Lee-Woon Jang ◽

J. L. Hoffman ◽

Nam Soo Kim ◽

...

Keyword(s):

Thin Films ◽

Residual Stress ◽

Substrate Temperature ◽

Ion Beam ◽

Zno Thin Films ◽

Ion Beam Deposition ◽

Beam Deposition

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Growth of Low-Temperature Polycrystalline Si Film by Direct Negative Si Ion Beams

MRS Proceedings ◽

10.1557/proc-438-375 ◽

1996 ◽

Vol 438 ◽

Cited By ~ 4

Author(s):

M. H. Sohn ◽

D. Kim ◽

Y. O. Ahn ◽

S. I. Kim

Keyword(s):

Grain Size ◽

Substrate Temperature ◽

Beam Energy ◽

Liquid Crystal Display ◽

Ion Beam ◽

Thin Film Transistor ◽

Deposition Process ◽

Major Barrier ◽

Ion Beam Deposition ◽

Beam Deposition

AbstractPolycrystalline Si (Poly-Si) films were successfully grown at temperature less than 500 °C by using a direct Si ion beam deposition technique. In this process, the ion beam energy of Si- is directly coupled to the formation of the films. High substrate temperature (>600 °C), normally required for conventional CVD techniques, has been a major barrier for the Poly-Si Thin Film Transistor Liquid Crystal Display (TFT LCD) which uses a glass substrate. Thus, the ability to produce Poly-Si film below the glass transition temperature and to control the grain size will make this direct Si- ion beam deposition process a potential alternative technique for future TFT LCD. The grain size dependence on the ion beam energy and substrate temperature was investigated using a Transmission Electron Microscope (TEM). The grain size could be controlled from 0.1 μm to 1 μm at ion beam energies from 10 to 50 eV with a substrate temperature less than 500 °C. The resistivity of the as-deposited film was of the order of 100 Ωcm due to in-situ doping effect.

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Electron energy loss spectroscopy of diamond-like carbon thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100130997 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1272-1273

Author(s):

J. Kulik ◽

Y. Lifshitz ◽

G.D. Lempert ◽

S. Rotter ◽

J.W. Rabalais ◽

...

Keyword(s):

Thin Films ◽

Energy Loss ◽

Electron Energy ◽

Ion Beam ◽

Diamond Like Carbon ◽

Ion Beam Deposition ◽

Chemistry Research ◽

Carbon Thin Films ◽

Electron Energy Loss ◽

Beam Deposition

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.

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