Energy Distribution of Secondary Particles in Ion Beam Deposition Process of Ag: Experiment, Calculation and Simulation

We report the preparation and properties of higher nitrides of Hf, Zr, and Ti synthesized by dual ion beam deposition. For Hf and Zr, evidence is given for the existence of a metastable nitride phase with composition of approximately Hf3 N4 and Zr3 N4. These two materials are insulating and transparent straw colored, in contrast to the well-known mononitrides, which are shiny, gold colored, and highly conducting. For Ti-N we do not reach as high an N content and do not obtain an insulating, transparent phase. The higher nitrides of Hf and Zr are synthesized under energetic nitrogen ion bombardment (200 e V) of a growing film and do not form in the presence of molecular nitrogen gas alone. Several variations of the ion beam deposition process are used to obtain a wide range of film composition and to study the transition from the mononitride to the higher nitride phase. Transmission electron diffraction shows the structure of Hf3N4 and Zr3N4 to be very close to the Bl (NaCl) structure of the mononitrides, but with a slight rhombohedral distortion. Additional evidence from noble gas incorporation (Ne, Ar, and Xe) supports a model of these higher nitrides as containing a large number of vacancies on the metal atom sites.

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Influence of Vacuum Cathodic Arc Etching on Structure and Properties of W-Doped DLC Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.787.296 ◽

2013 ◽

Vol 787 ◽

pp. 296-300 ◽

Cited By ~ 1

Author(s):

Zhi Qiang Fu ◽

Cheng Biao Wang ◽

Wen Yue ◽

Zhi Jian Peng ◽

Song Sheng Lin ◽

...

Keyword(s):

Elastic Modulus ◽

Friction And Wear ◽

Surface Defects ◽

Ion Beam ◽

Deposition Process ◽

Average Value ◽

Ion Beam Deposition ◽

Cathodic Arc ◽

Beam Deposition ◽

Adhesion Friction

In order to further improve the deposition process of the W-doped DLC films synthesized by a hybrid deposition method of vacuum cathodic arc, ion beam deposition, and magnetron sputtering, the paper studied the effect of vacuum cathodic arc etching prior to the deposition on the surface morphology, chemical bond status, hardness, elastic modulus, adhesion, friction, and wear of the films. It was found that the surface defects in the W-doped DLC films, which increase the average value and fluctuation of the friction coefficient of the W-doped DLC films, are mainly produced by vacuum cathodic arc etching. The adhesion and wear resistance of the W-doped DLC films can be obviously improved by arc etching while arc etching has an unobvious effect on the chemical bonding status, hardness, and elastic modulus of the W-doped DLC films.

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Growth of Low-Temperature Polycrystalline Si Film by Direct Negative Si Ion Beams

MRS Proceedings ◽

10.1557/proc-438-375 ◽

1996 ◽

Vol 438 ◽

Cited By ~ 4

Author(s):

M. H. Sohn ◽

D. Kim ◽

Y. O. Ahn ◽

S. I. Kim

Keyword(s):

Grain Size ◽

Substrate Temperature ◽

Beam Energy ◽

Liquid Crystal Display ◽

Ion Beam ◽

Thin Film Transistor ◽

Deposition Process ◽

Major Barrier ◽

Ion Beam Deposition ◽

Beam Deposition

AbstractPolycrystalline Si (Poly-Si) films were successfully grown at temperature less than 500 °C by using a direct Si ion beam deposition technique. In this process, the ion beam energy of Si- is directly coupled to the formation of the films. High substrate temperature (>600 °C), normally required for conventional CVD techniques, has been a major barrier for the Poly-Si Thin Film Transistor Liquid Crystal Display (TFT LCD) which uses a glass substrate. Thus, the ability to produce Poly-Si film below the glass transition temperature and to control the grain size will make this direct Si- ion beam deposition process a potential alternative technique for future TFT LCD. The grain size dependence on the ion beam energy and substrate temperature was investigated using a Transmission Electron Microscope (TEM). The grain size could be controlled from 0.1 μm to 1 μm at ion beam energies from 10 to 50 eV with a substrate temperature less than 500 °C. The resistivity of the as-deposited film was of the order of 100 Ωcm due to in-situ doping effect.

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Electron energy loss spectroscopy of diamond-like carbon thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100130997 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1272-1273

Author(s):

J. Kulik ◽

Y. Lifshitz ◽

G.D. Lempert ◽

S. Rotter ◽

J.W. Rabalais ◽

...

Keyword(s):

Thin Films ◽

Energy Loss ◽

Electron Energy ◽

Ion Beam ◽

Diamond Like Carbon ◽

Ion Beam Deposition ◽

Chemistry Research ◽

Carbon Thin Films ◽

Electron Energy Loss ◽

Beam Deposition

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.

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