In-situ Measurement of Viscous Flow of Thermal Silicon Dioxide Thin Films at High Temperature

1996 ◽  
Vol 446 ◽  
Author(s):  
Chia-Liang Yu ◽  
Paul A. Flinn ◽  
John C. Bravman
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Stress Relaxation ◽  
Silicon Dioxide ◽  
Viscous Flow ◽  
Relaxation Process ◽  
Structural Relaxation ◽  
Wafer Curvature ◽  
Thermal Oxide

AbstractWith a newly constructed high temperature wafer curvature system, we measured significant viscous flow of thermal oxides at temperatures as low as 800°C. In-situ measurements were performed at temperatures between 800°C and 1100°C for wet and dry thermal oxide films of various thicknesses. We found that dry oxides have higher stresses and slower stress relaxation compared to wet oxides grown at higher temperatures. The viscosity of thermal oxide thin films was found to increase with time during relaxation and a structural relaxation process is suggested to explain this phenomenon.

IN SITU GROWTH OF HIGH TEMPERATURE SUPERCONDUCTOR THIN FILMS WITH EVAPORATION TECHNIQUES USING AN OZONE JET

1990 ◽  
pp. 407-413
Author(s):  
H.M. Appelboom ◽  
J.P. Adriaanse ◽  
H.I. de Groot ◽  
G. Rietveld ◽  
D. van der Marel ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Temperature Superconductor ◽  
In Situ Growth ◽  
Superconductor Thin Films

Effect of Deposition Conditions on Intrinsic Stress, Phase Transformation and Stress Relaxation in Tantalum Thin Films

1991 ◽  
Vol 239 ◽  
Author(s):  
A. Mutscheller ◽  
L. A. Clevenger ◽  
J.M.E. Harper ◽  
C. Cabrai ◽  
K. Barmakt
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Phase Transformation ◽  
Stress Relaxation ◽  
Compressive Stress ◽  
Stress Relief ◽  
Beta Phase ◽  
Alpha Phase ◽  
Intrinsic Stress

AbstractWe demonstrate that the high temperature polymorphic tantalum phase transition from the tetragonal beta phase to the cubic alpha phase causes complete stress relaxation and a large decrease in the resistance of tantalum thin films. 100 nm beta tantalum thin films were deposited onto thermally oxidized <100> silicon wafers by dc magnetron sputtering with argon. In situ stress and resistance at temperature were measured during temperature-ramped annealing in purified He. Upon heating, films that were initially compressively stressed showed increasing compressive stress due to thermo-elastic deformation from 25 to 550°C, slight stress relief due to plastic deformation from 550 to 700°C and complete stress relief due to the beta to alpha phase transformation at approximately 700–800°C. Incomplete compressive stress relaxation was observed at high temperatures if the film was initially deposited in the alpha phase or if the beta phase did not completely transform into alpha by 800°C. This incomplete beta to alpha phase transition was most commonly observed on samples that had radio frequency substrate bias greater than -100 V. We conclude that the main stress relief mechanism for tantalum thin films is the beta to alpha phase transformation that occurs at 700 to 800°C.

In-Situ High Temperature Study of Ceramics and Ceramic Ultra-Thin Films Using a X-Ray Diffractometer with a Parabolic Multilayer Mirror

2001 ◽  
Vol 206-213 ◽  
pp. 775-778 ◽  
Author(s):  
Gert Roebben ◽  
Chao Zhao ◽  
Ren-Guan Duan ◽  
Jef Vleugels ◽  
Marc M. Heyns ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
X Ray ◽  
Temperature Study ◽  
Multilayer Mirror ◽  
High Temperature Study

scholarly journals High-temperature (1500 K) reciprocal space mapping on a laboratory X-ray diffractometer

2007 ◽  
Vol 40 (2) ◽  
pp. 332-337 ◽  
Author(s):  
R. Guinebretière ◽  
A. Boulle ◽  
R. Bachelet ◽  
O. Masson ◽  
P. Thomas
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Reciprocal Space ◽  
Primary Beam ◽  
Sample Holder ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Translation Stage

A laboratory X-ray diffractometer devoted to thein situcharacterization of the microstructure of epitaxic thin films at temperatures up to 1500 K has been developed. The sample holder was built using refractory materials, and a high-accuracy translation stage allows correction of the dilatation of both the sample and the sample holder. The samples are oriented with respect to the primary beam with two orthogonal rotations allowing the registration of symmetric as well as asymmetric reciprocal space maps (RSMs). The association of a monochromatic primary beam and a position-sensitive detector allows the measurement of RSMs in a few minutes for single crystals and in a few hours for imperfect epitaxic thin films. A detailed description of the setup is given and its potential is illustrated by high-temperature RSM experiments performed on yttria-doped zirconia epitaxic thin films grown on sapphire substrates.

Structural Relaxation of Amorphous Silicon Induced by High Temperature Annealing

1990 ◽  
Vol 205 ◽  
Author(s):  
L. De Wit ◽  
S. Roorda ◽  
W.C. Sinke ◽  
F.W. Saris ◽  
A.J.M. Berntsen ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Ion Implantation ◽  
Amorphous Silicon ◽  
Relaxation Process ◽  
Structural Relaxation ◽  
High Temperature Annealing ◽  
Temperature Range ◽  
Amorphous Si ◽  
Anneal Temperature

Structural relaxation of amorphous Si is studied in the temperature range 500-850 °C using Raman spectroscopy. The minumum value for the Raman peakwidth that can be obtained is inversely proportional to the anneal temperature. The relaxation process is basically the same in a-Si prepared by ion implantation and by vacuum evaporation.

In situ growth of high temperature superconductor thin films with evaporation techniques using an ozone jet

1990 ◽  
Vol 164-165 ◽  
pp. 407-413 ◽  
Author(s):  
H.M. Appelboom ◽  
J.P. Adriaanse ◽  
H.I. de Groot ◽  
G. Rietveld ◽  
D. van der Marel ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Temperature Superconductor ◽  
In Situ Growth ◽  
Superconductor Thin Films

High temperature “in situ” growth bu cathodic sputtering of fully oxygenated YBaCuO thin films

1994 ◽  
Vol 235-240 ◽  
pp. 649-650 ◽  
Author(s):  
J. García López ◽  
J.C.Cheang Wong ◽  
J. Siejka ◽  
L.M. Mercandalli ◽  
R. Bisaro
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
In Situ Growth ◽  
Cathodic Sputtering
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