Preparation and Characterization of the Active Layer for an Led Based on Oxidized Porous Silicon

AbstractWe have studied the photoluminescence (PL) in oxidized porous silicon (PSi), prepared from anodized crystalline Si followed by annealing at temperatures ranging from 700 to 1000°C. It has been found that two PL bands with spectral peaks at 1.6 e V (near-IR band) and near 2 eV (red band) exist with a strong dependence on preparation (annealing) conditions. Recent experimental results show a correlation between the intensity of the near-IR band and the level of leakage current in the diode-like structure. The suppression of the near-IR emission results in improved carrier transport, and the enhancement of the red band emission maximizes the electroluminescence (EL) efficiency. The PL study of thermally oxidized PSi indicates different recombination mechanisms. The red PL band is associated with a mechanism similar to band-tail-recombination within the quasi-bandgap of Si nanograins, whereas the near infra-red PL is associated with recombination via defect centers. These mechanisms will be discussed.

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Microstructural Characterization of Porous Silicon SOI Structures

MRS Proceedings ◽

10.1557/proc-107-441 ◽

1987 ◽

Vol 107 ◽

Cited By ~ 4

Author(s):

J.D. L'ecuyer ◽

M.H. Loretto ◽

J.P.G. Farr ◽

J.M. Keen ◽

J.G. Castledine ◽

...

Keyword(s):

Porous Silicon ◽

Cross Section ◽

Microstructural Characterization ◽

Epitaxial Silicon ◽

Order Of Magnitude ◽

Oxidized Porous Silicon

AbstractSOI structures up to 60nm wide have been produced using oxidized porous silicon formed by selective n/n+ anodizing. The microstructures of the islands were investigated using TEM in both the planar and cross-section geometries. Typical island thickness is about 0.15nm and the buried oxidized porous silicon about 0.65μm. Retention of the island geometry is excellent. Few defects (essentially dislocations) are associated with either the anodizing or oxidation treatments. The interface sharpness between the epitaxial silicon/oxidized porous silicon is 10-20nm, an order of magnitude sharper than the back interface between the oxidized porous silicon and the substrate.

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Characterization of an Oxidized Porous Silicon Layer by Complex Process Using RTO and the Fabrication of CPW-Type Stubs on an OPSL for RF Application

ETRI Journal ◽

10.4218/etrij.04.0103.0124 ◽

2004 ◽

Vol 26 (4) ◽

pp. 315-320 ◽

Cited By ~ 2

Author(s):

Jeong-Yong Park ◽

Jong-Hyun Lee

Keyword(s):

Porous Silicon ◽

Silicon Layer ◽

Porous Silicon Layer ◽

Complex Process ◽

Oxidized Porous Silicon

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Characterization of hydrophobic, oxidized porous silicon layer formed by anodic etching of n+-type silicon surface in a HF:C2H5OH:HCl:H2O2:H2O electrolyte for bio-application

Applied Physics A ◽

10.1007/s00339-014-8230-9 ◽

2014 ◽

Vol 116 (3) ◽

pp. 1337-1345 ◽

Cited By ~ 1

Author(s):

M. Naddaf ◽

A. Almariri

Keyword(s):

Porous Silicon ◽

Silicon Surface ◽

Silicon Layer ◽

Porous Silicon Layer ◽

Anodic Etching ◽

Type Silicon ◽

Oxidized Porous Silicon

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Pb1 defect study and chemical characterization of the Si(001)SiO2 interface in oxidized porous silicon

Surface Science ◽

10.1016/0039-6028(95)01230-3 ◽

1996 ◽

Vol 352-354 ◽

pp. 793-796 ◽

Cited By ~ 10

Author(s):

J.L. Cantin ◽

M. Schoisswohl ◽

H.J. von Bardeleben ◽

F. Rochet ◽

G. Dufour

Keyword(s):

Porous Silicon ◽

Chemical Characterization ◽

Oxidized Porous Silicon

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Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique

Physica B Condensed Matter ◽

10.1016/j.physb.2008.01.029 ◽

2008 ◽

Vol 403 (17) ◽

pp. 2634-2638 ◽

Cited By ~ 23

Author(s):

Chan Kok Sheng ◽

W. Mahmood Mat Yunus ◽

Wan Md. Zin Wan Yunus ◽

Zainal Abidin Talib ◽

Anuar Kassim

Keyword(s):

Porous Silicon ◽

Transport Properties ◽

Carrier Transport ◽

Photoacoustic Technique ◽

Carrier Transport Properties

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Characterization of Erbium Doped SiO2 Layers Formed On Silicon By Spark Processing

MRS Proceedings ◽

10.1557/proc-486-281 ◽

1997 ◽

Vol 486 ◽

Author(s):

John V. St. John ◽

Jeffery L. Coffer ◽

Young Gyu Rho ◽

Patrick Diehl ◽

Russell F. Pinizzotto ◽

...

Keyword(s):

Rare Earth ◽

Porous Silicon ◽

Porous Si ◽

Rare Earth Ion ◽

Temperature Oxidation ◽

X Ray ◽

Near Ir ◽

Erbium Doped ◽

Er Doped

AbstractDeposition of a rare earth salt layer on a silicon substrate with subsequent spark processing yields a porous Si layer and SiO 2 cap doped with the rare earth ion. We have characterized luminescent Er-doped porous SiO2 on Si by scanning electron microscopy, energy dispersive Xray spectroscopy, as well as visible and near IR photoluminescence (PL) spectroscopies. Energydispersive x-ray maps indicate that the erbium concentration in the porous layer can be controlled by varying the molarity of the erbium solution deposited on the substrate prior to spark processing. Visible PL measurements reveal that the concentration of Er3+ is proportional to the resultant intensity of the visible fluorescence transitions; however, for the near IR fluorescence peak at 1.54 gim, self-quenching due to erbium clustering occurs at higher concentrations. Erbium-doped porous silicon layers can also be obtained by diffusion of an erbium salt into porous silicon formed by anodic etching of Si in hydrofluoric acid. Densification of the porous Si layers through high temperature oxidation after erbium diffusion forms erbium-doped SiO2 layers.

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