Characterization of hydrophobic, oxidized porous silicon layer formed by anodic etching of n+-type silicon surface in a HF:C2H5OH:HCl:H2O2:H2O electrolyte for bio-application

2014 ◽  
Vol 116 (3) ◽  
pp. 1337-1345 ◽  
Author(s):  
M. Naddaf ◽  
A. Almariri
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Anodic Etching ◽  
Type Silicon ◽  
Oxidized Porous Silicon

Ellipsometric characterization of oxidized porous silicon layer structures

2000 ◽  
Vol 69-70 ◽  
pp. 182-187 ◽  
Author(s):  
T Lohner ◽  
M Fried ◽  
P Petrik ◽  
O Polgár ◽  
J Gyulai ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Layer Structures ◽  
Ellipsometric Characterization ◽  
Oxidized Porous Silicon

scholarly journals Fabrication and Characterization of Porous Silicon Layer Prepared by Photo-Electrochemical Etching in CH3OH:HF Solution

2013 ◽  
Vol 8 ◽  
pp. 29-36 ◽  
Author(s):  
Hasan A. Hadi ◽  
Raid A. Ismail ◽  
Nadir F. Habubi
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Gravimetric Method ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Constant Current ◽  
Theoretical Relation ◽  
Fabrication And Characterization ◽  
A Current

Porous silicon (PS) has been fabricated by Photo-electrochemical etching. Porous silicon was anodized on n-type Si in light using a current density of 20 mA/cm2 for 10 min. The porous structure formation was confirmed using XRD and AFM studies. The root mean square (RMS) roughness of the Porous silicon layer is found to be around 47.5 nm and the ten point height was 317 nm. The average of pores diameter was 419.98nm, and the grain growth is columnar with a (211) preferred orientation. The grain size of the PS was estimated from the Scherer’s formula and found to be 73 nm. All the properties of the porous silicon layer, such as porosity and the thickness depend on the anodization parameters. The porosity (P) was approximately 77%. The thickness of the layer formed during an anodization in constant current was 3.54 nm in gravimetric method, while its value was 1.77 nm by using the theoretical relation.

The improvement of thick oxidized porous silicon layer growth process

2006 ◽  
Author(s):  
Jian Li ◽  
Junming An ◽  
Hongjie Wang ◽  
Junlei Xia ◽  
Dingshan Gao ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Growth Process ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Layer Growth ◽  
Oxidized Porous Silicon

X-Ray Diffraction and Reflectivity Studies of Thin Porous Silicon Layers

1996 ◽  
Vol 452 ◽  
Author(s):  
D. Buttard ◽  
G. Dolino ◽  
D. Bellet ◽  
T. Baumbach
Keyword(s):  
Porous Silicon ◽  
Structural Information ◽  
Surface Film ◽  
Silicon Layer ◽  
Lattice Parameter ◽  
Porous Silicon Layer ◽  
Interface Thickness ◽  
X Ray Diffraction ◽  
X Ray

AbstractHigh resolution X-ray diffraction and reflectivity have been used for the structural characterization of thin porous silicon layers of p and p+ doping type. Thin porous silicon layers studied either by diffraction or reflectivity, in the range of 10–1000 nm, exhibit several thickness fringes, corresponding to a lateral homogeneity of the layer thickness. The comparison between the experimental results with simulations enables one to deduce structural information relative to the porosity, thickness, lattice parameter as well as interface thickness. For p+ type samples a double fringe system was observed, showing the existence of a surface film probably at the porous silicon layer top surface.

RF and non-linearity characterization of porous silicon layer for RF-ICs

2014 ◽  
Author(s):  
Yasmina Belaroussi ◽  
Abdelhalim Slimane ◽  
Mohand Tahar Belaroussi ◽  
Mohamed Trabelsi ◽  
Gilles Scheen ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Rf Ics
Sign in / Sign up

Export Citation Format

Share Document