Characterization of an Oxidized Porous Silicon Layer by Complex Process Using RTO and the Fabrication of CPW-Type Stubs on an OPSL for RF Application

Porous silicon (PS) has been fabricated by Photo-electrochemical etching. Porous silicon was anodized on n-type Si in light using a current density of 20 mA/cm2 for 10 min. The porous structure formation was confirmed using XRD and AFM studies. The root mean square (RMS) roughness of the Porous silicon layer is found to be around 47.5 nm and the ten point height was 317 nm. The average of pores diameter was 419.98nm, and the grain growth is columnar with a (211) preferred orientation. The grain size of the PS was estimated from the Scherer’s formula and found to be 73 nm. All the properties of the porous silicon layer, such as porosity and the thickness depend on the anodization parameters. The porosity (P) was approximately 77%. The thickness of the layer formed during an anodization in constant current was 3.54 nm in gravimetric method, while its value was 1.77 nm by using the theoretical relation.

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The improvement of thick oxidized porous silicon layer growth process

10.1117/12.667708 ◽

2006 ◽

Author(s):

Jian Li ◽

Junming An ◽

Hongjie Wang ◽

Junlei Xia ◽

Dingshan Gao ◽

...

Keyword(s):

Porous Silicon ◽

Growth Process ◽

Silicon Layer ◽

Porous Silicon Layer ◽

Layer Growth ◽

Oxidized Porous Silicon

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X-Ray Diffraction and Reflectivity Studies of Thin Porous Silicon Layers

MRS Proceedings ◽

10.1557/proc-452-437 ◽

1996 ◽

Vol 452 ◽

Cited By ~ 14

Author(s):

D. Buttard ◽

G. Dolino ◽

D. Bellet ◽

T. Baumbach

Keyword(s):

Porous Silicon ◽

Structural Information ◽

Surface Film ◽

Silicon Layer ◽

Lattice Parameter ◽

Porous Silicon Layer ◽

Interface Thickness ◽

X Ray Diffraction ◽

X Ray

AbstractHigh resolution X-ray diffraction and reflectivity have been used for the structural characterization of thin porous silicon layers of p and p+ doping type. Thin porous silicon layers studied either by diffraction or reflectivity, in the range of 10–1000 nm, exhibit several thickness fringes, corresponding to a lateral homogeneity of the layer thickness. The comparison between the experimental results with simulations enables one to deduce structural information relative to the porosity, thickness, lattice parameter as well as interface thickness. For p+ type samples a double fringe system was observed, showing the existence of a surface film probably at the porous silicon layer top surface.

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RF and non-linearity characterization of porous silicon layer for RF-ICs

2014 9th International Design and Test Symposium (IDT) ◽

10.1109/idt.2014.7038591 ◽

2014 ◽

Cited By ~ 1

Author(s):

Yasmina Belaroussi ◽

Abdelhalim Slimane ◽

Mohand Tahar Belaroussi ◽

Mohamed Trabelsi ◽

Gilles Scheen ◽

...

Keyword(s):

Porous Silicon ◽

Silicon Layer ◽

Porous Silicon Layer ◽

Rf Ics

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Microstructure of pores in N+-silicon layers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126160 ◽

1987 ◽

Vol 45 ◽

pp. 252-253

Author(s):

V. S. Kaushik

Keyword(s):

Porous Silicon ◽

Hydrofluoric Acid ◽

Silicon Layer ◽

Porous Silicon Layer ◽

Silicon On Insulator ◽

Cross Sectional ◽

Porous Layers ◽

Doped Silicon ◽

Oxidized Porous Silicon ◽

P Type

Oxidized porous silicon has drawn considerable interest as one of the alternatives for implementing silicon-on-insulator technology. Buried porous layers can be formed by utilizing the preferential pore formation in highly doped silicon during anodic etching in hydrofluoric acid. This porous silicon layer (PSL) can be subsequently oxidized rapidly at low temperatures to yield a device-quality silicon island layer, which is dielectrically isolated from the substrate. Although pores can be formed in both n-type and p-type silicon, the latter has received more attention. This paper presents the results of cross-sectional TEM (XTEM) observations of the microstructure of pores in n+ silicon.Samples used in this study were n- /n+/n- doped silicon (001) wafers which had been anodically etched in a hydrofluoric acid solution to form the PSL in the n+ layer via trenches etched through the n- surface layer.

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