Microstructural Characterization of Porous Silicon SOI Structures

1987 ◽  
Vol 107 ◽  
Author(s):  
J.D. L'ecuyer ◽  
M.H. Loretto ◽  
J.P.G. Farr ◽  
J.M. Keen ◽  
J.G. Castledine ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Cross Section ◽  
Microstructural Characterization ◽  
Epitaxial Silicon ◽  
Order Of Magnitude ◽  
Oxidized Porous Silicon

AbstractSOI structures up to 60nm wide have been produced using oxidized porous silicon formed by selective n/n+ anodizing. The microstructures of the islands were investigated using TEM in both the planar and cross-section geometries. Typical island thickness is about 0.15nm and the buried oxidized porous silicon about 0.65μm. Retention of the island geometry is excellent. Few defects (essentially dislocations) are associated with either the anodizing or oxidation treatments. The interface sharpness between the epitaxial silicon/oxidized porous silicon is 10-20nm, an order of magnitude sharper than the back interface between the oxidized porous silicon and the substrate.

Microstructural Characterization of Ni-Al Alloyed Layer under Laser Rapid Solidification Condition

2011 ◽  
Vol 328-330 ◽  
pp. 565-568
Author(s):  
Yue Yang ◽  
Hua Wu
Keyword(s):  
Cross Section ◽  
Pulsed Laser ◽  
Microstructural Characterization ◽  
Eutectic Growth ◽  
Nickel Layer ◽  
Solidification Condition ◽  
Melted Zone ◽  
Transmission Electron ◽  
Pulsed Laser Irradiation

Nickel layer electroless deposited on aluminum substrate was alloyed by Nd-YAG pulsed laser irradiation. Solidification microstructure was characterized through cross section, showing typical microstructure that were located in upper and middle melted zone and interface of melted pool and substrate, respectively. The microstructure was analyzed by transmission electron microscopy (TEM). Followed by the observations, the eutectic growth process was analyzed.

Microstructural Characterization of Porous Silicon Carbide Membrane Support With and Without Alumina Additive

2006 ◽  
Vol 0 (0) ◽  
pp. 061120100924065-??? ◽  
Author(s):  
Manabu Fukushima ◽  
You Zhou ◽  
Hiroyuki Miyazaki ◽  
Yu-ichi Yoshizawa ◽  
Kiyoshi Hirao ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Porous Silicon ◽  
Microstructural Characterization ◽  
Porous Silicon Carbide

Preparation and Characterization of the Active Layer for an Led Based on Oxidized Porous Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
L. Tsybeskov ◽  
K. D. Hiirschman ◽  
L. F. Moore ◽  
P. M. Fauchet ◽  
P. D. J. Calcott
Keyword(s):  
Porous Silicon ◽  
Carrier Transport ◽  
Strong Dependence ◽  
Band Emission ◽  
Annealing Conditions ◽  
Near Ir ◽  
Spectral Peaks ◽  
Oxidized Porous Silicon ◽  
Ir Emission

AbstractWe have studied the photoluminescence (PL) in oxidized porous silicon (PSi), prepared from anodized crystalline Si followed by annealing at temperatures ranging from 700 to 1000°C. It has been found that two PL bands with spectral peaks at 1.6 e V (near-IR band) and near 2 eV (red band) exist with a strong dependence on preparation (annealing) conditions. Recent experimental results show a correlation between the intensity of the near-IR band and the level of leakage current in the diode-like structure. The suppression of the near-IR emission results in improved carrier transport, and the enhancement of the red band emission maximizes the electroluminescence (EL) efficiency. The PL study of thermally oxidized PSi indicates different recombination mechanisms. The red PL band is associated with a mechanism similar to band-tail-recombination within the quasi-bandgap of Si nanograins, whereas the near infra-red PL is associated with recombination via defect centers. These mechanisms will be discussed.

Microstructural Characterization of Photoluminescent Porous Silicon

1991 ◽  
Vol 256 ◽  
Author(s):  
J. M. Macaulay ◽  
F. M. Ross ◽  
P. C. Searson ◽  
S. K. Sputz ◽  
R. People ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Optical Properties ◽  
Porous Silicon ◽  
Microstructural Characterization ◽  
Photoluminescence Spectroscopy ◽  
Experimental Results ◽  
Visible Luminescence ◽  
Wide Range ◽  
The Impact

ABSTRACTWe have used electron microscopy to examine the microstructure of porous silicon films over a wide range of doping levels, and photoluminescence spectroscopy to study their optical properties. We discuss the impact of our experimental results on models from the literature which were proposed to explain visible luminescence from porous silicon.

scholarly journals Electrochemical and microstructural characterization of platinum supported on glassy carbon

2007 ◽  
Vol 61 (3) ◽  
pp. 135-141
Author(s):  
Sanja Terzic ◽  
Vladislava Jovanovic ◽  
Dusan Tripkovic ◽  
Andrzej Kowal ◽  
Jerzy Stoch
Keyword(s):  
Methanol Oxidation ◽  
Glassy Carbon ◽  
Microstructural Characterization ◽  
Electrochemical Treatment ◽  
Organic Residues ◽  
Remarkable Effect ◽  
Platinum Particles ◽  
Order Of Magnitude

The effect of the electrochemical oxidation of glassy carbon on the deposition of platinum particles and the electrocatalytic activity of platinum supported on oxidized glassy carbon were studied for methanol oxidation in H2SO4 solution. Platinum was potentiostatically deposited from H2SO4 + 6mM H2PtCl6 solution. Glassy carbon was anodically polarized in 1 M NaOH at 1.41 V (SCE) for 35 and 95 s and in 0.5 M H2SO4 at 2V (SCE) for 35; 95 s and 2.25 V for 35 and 95 s. Electrochemical treatment of the GC support leads to a better distribution of platinum on the substrate and has remarkable effect on the activity. The activity of the Pt/GCox electrode for methanol oxidation is larger than that of polycrystalline Pt and by more than one order of magnitude larger than that of a Pt/GC electrode. This increase in activity indicates the pronounced role of the organic residues of the GC support on the properties of Pt particles deposited on glassy carbon.

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