ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications

2011 ◽  
Vol 276 ◽  
pp. 3-19 ◽  
Author(s):  
Eugene Chubenko ◽  
Alexey Klyshko ◽  
Vitaly Bondarenko ◽  
Marco Balucani ◽  
Anatoly I. Belous ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Electrochemical Deposition ◽  
Electrochemical Process ◽  
Zno Films ◽  
Photovoltaic Devices ◽  
Bulk Silicon ◽  
High Quality ◽  
Hydrothermal Deposition ◽  
Electrochemically Deposited ◽  
Deposition Processes

In present work the investigation of the electrochemical and chemical hydrothermal deposition processes of ZnO on silicon is presented. The influence of the electrochemical process parameters on the characteristics and morphology of the ZnO deposits is analyzed. Electrochemical deposition from non aqueous DMSO solutions on porous silicon buffer layer is also discussed. The details of the chemical hydrothermal deposition from the nitrate bath of high-quality ZnO crystals on silicon substrate are presented. It was shown that morphology and size of synthesized ZnO crystals depends on the temperature of the deposition bath. Differences between photoluminescence of electrochemically deposited ZnO thin films and hydrothermally synthesized crystals are shown. Electrochemically deposited ZnO films demonstrate defect-caused luminescence and hydrothermally grown ZnO crystals shows intensive exciton luminescence band in UV region. Hydrothermal deposition of high-quality ZnO crystals on the surface of electrochemically deposited ZnO seed layer with porous silicon buffer improves photoluminescence properties of the structure which is useful for optoelectronics applications. Possible applications of ZnO as gas sensors and photovoltaic devices are considered. Aspects of ZnO electrochemical deposition on bulk silicon and silicon-on-isolator wafers for integration purposes are discussed.

Electrochemically Deposited Aluminum in Template of Porous Silicon Film

2010 ◽  
Vol 663-665 ◽  
pp. 1032-1035
Author(s):  
Bao Gai Zhai ◽  
Qing Lan Ma ◽  
Ming Meng ◽  
Yuan Ming Huang
Keyword(s):  
Porous Silicon ◽  
Electrochemical Deposition ◽  
High Surface ◽  
Silicon Film ◽  
Volume Ratio ◽  
Deposition Condition ◽  
Sem Images ◽  
Interesting Phenomenon ◽  
Electrochemically Deposited ◽  
The One

In this article, we report on the observations that in the aqueous electrolyte of aluminum nitrate, the thin metallic conducting films on both internal and external surface of porous silicon (PS) thin films that emit visible photoluminescence at room temperature prior to electrochemical deposition have been obtained under electrochemical deposition condition. Add to this high surface-to-volume ratio and these make it a good candidate for the catalyst supporter. We have investigated the surface morphology of PS after the interval of about 30 hours of electrochemically deposited aluminum by means of scanning electron microscopy (SEM). It has been shown from SEM images that not only micrometer-sized pores are smoothed by deposition of aluminum microcrystal, but also the presences of semi-sphere aluminum microcrystal which rooted in the tip of micrometer-sized pores are observed. On the one hand, this extremely interesting phenomenon which the micrometer-sized pores are smoothed may be explained in terms of principle of electrochemical deposition; on the other hand, we have laid the formation mechanism of semi-spherical aluminum microcrystal at the door of Gibbs free energy.

Growth and Characterization of Polycrystalline Diamond Thin Films on Porous Silicon by Hot Filament Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
E. J. Charlson ◽  
E. M. Charlson ◽  
T. Stacy ◽  
F. Shahedipour ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Electrochemical Process ◽  
Nucleation Density ◽  
High Quality ◽  
Average Grain Size ◽  
Hot Filament

AbstractHot filament chemical vapor deposition (HFCVD) was utilized to grow high quality diamond film on porous silicon (PS) substrates to a thickness of 5–6 μm. Boron-doped silicon substrates of <100> orientation and resistivity of 5–15 ohm-cm were anodized by the electrochemical process to form PS. A slurry of diamond paste (1/4 micron average grain size) was rubbed on the samples for a few seconds before introduction into the chamber. Diamond film growth on the PS has the advantages of shorter incubation time and higher nucleation density as evident from scanning electron microscopy (SEM). The results of X-ray diffraction confirm the growth of predominatly (111) oriented high quality diamond film. Electrical properties were also studied by sputtering circular gold contacts on top of diamond film and measuring current-voltage (I-V) characteristics.

Microstructures and Photoluminescence of Electrochemically-Deposited ZnO Films on Porous Silicon and Silicon

2013 ◽  
Vol 538 ◽  
pp. 30-33 ◽  
Author(s):  
Lan Li Chen ◽  
Zhong Ke Tang ◽  
Ming Ji Shi
Keyword(s):  
Thin Films ◽  
Porous Silicon ◽  
Chloride Solution ◽  
Luminous Intensity ◽  
Zno Thin Films ◽  
Zno Films ◽  
Photoluminescence Spectra ◽  
Zno Film ◽  
Zinc Chloride Solution ◽  
Electrochemically Deposited

ZnO films covered with microrods were grown on silicon and porous silicon through electrochemical deposition with silicon or porous silicon as cathode, a platinum wire as anode, and zinc chloride solution of 0.05mol/L as electrolyte. The morphologies by SEM and the crystal structures by XRD were studied. The photoluminescence spectra were also measured. And the mechanisms of the growth and the photoluminescence of the ZnO thin films were analyzed and compared. Studies showed that the luminous intensity of ZnO thin films is different under different conditions, but its peak is located between 370-385nm, luminous intensity of the ZnO film deposited on porous silicon and then annealed is weaker.

Smart‐Cut® : The Basic Fabrication Process for Unibond® Soi Wafers

1996 ◽  
Vol 446 ◽  
Author(s):  
A.J. Auberton‐Hervé ◽  
T. Barge ◽  
F. Metral ◽  
M. Bruel ◽  
B. Aspar ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Low Cost ◽  
Bulk Silicon ◽  
High Quality ◽  
Thin Film Thickness ◽  
Hydrogen Implantation ◽  
Electric Behavior ◽  
Bonding Technology ◽  
Good Uniformity ◽  
Quality Surface

AbstractThe advantage of SOI wafers for device manufacture has been widely studied. To be a real challenger to bulk silicon, SOI producers have to offer SOI wafers in large volume and at low cost. The new Smart‐Cut® SOI process used for the manufacture of the Unibond® SOI wafers answers most of the SOI wafer manufacturability issues. The use of Hydrogen implantation and wafer bonding technology is the best combination to get good uniformity and high quality for both the SOI and buried oxide layer. In this paper, the Smart‐Cut® process is described in detail and material characteristics of Unibond® wafers such as crystalline quality, surface roughness, thin film thickness homogeneity, and electric behavior.

scholarly journals Photoelectric Properties of Screen-Printed Al-Doped ZnO Films

2012 ◽  
Vol 49 (2) ◽  
pp. 51-56
Author(s):  
A. Ogurcovs ◽  
Vj. Gerbreders ◽  
E. Tamanis ◽  
S. Gerbreders ◽  
G. Liberts
Keyword(s):  
Screen Printing ◽  
Energy Use ◽  
Zno Films ◽  
Photovoltaic Devices ◽  
Photoelectric Properties ◽  
Linear Relationships ◽  
Screen Printing Technique ◽  
Printing Technique ◽  
Doped Zno ◽  
Screen Printed

Photoelectric Properties of Screen-Printed Al-Doped ZnO Films The potential of cheap semiconductor materials in the area of solar energy use is illustrated by the example of zinc oxide (pure and Al-doped in various concentrations). Under investigation was the electric conductivity and photoelectric properties of ZnO thin films. The samples were prepared using screen-printing technique. The results of measurements point to non-linear relationships between Al concentration, photosensitivity and electrical conductivity of thin ZnO films. Optimal Al concentration for practical use of ZnO in photovoltaic devices is found to be ~ 1%. The experimental methods, technologies and results described in the paper could be used for further investigations in this area.

Probing Optical Transitions in Porous Silicon by Reflectance Spectroscopy in the Near Infrared, Visible and UV

1994 ◽  
Vol 358 ◽  
Author(s):  
W. Theiβ ◽  
R. Arens-Fischer ◽  
M. Arntzen ◽  
M.G. Berger ◽  
S. Frohnhoff ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Dielectric Function ◽  
Near Infrared ◽  
Solid Phase ◽  
Pore Wall ◽  
Reflectance Spectroscopy ◽  
Wall Material ◽  
Bulk Silicon ◽  
Band Structure Calculations ◽  
Structure Calculations

ABSTRACTReflectance spectroscopy has been used to obtain the dielectric function of the solid phase of porous silicon. The method is based on a fit of a parameterized dielectric function model to measured spectra. A crucial step in the procedure is the 'dielectric averaging' of the microscopic dielectric function of the pore wall material to the macroscopic effective dielectric function which governs the optical properties.Results are given for heavily and moderately p-doped samples of various porosities. For the latter large differences to bulk silicon have been found. The obtained dielectric functions are compared to the results of band structure calculations taken from literature.

Depositing Metals into Porous Silicon - the Impact on Luminescence

1994 ◽  
Vol 358 ◽  
Author(s):  
P. Steiner ◽  
F. Kozlowski ◽  
W. Lang
Keyword(s):  
Porous Silicon ◽  
Porous Layer ◽  
Electron Microprobe ◽  
Uv Light ◽  
Electrochemical Process ◽  
Photoluminescence Intensity ◽  
Spectral Position ◽  
Metal Atoms ◽  
Metal Treatment ◽  
The Impact

ABSTRACTIndium, tin, antimony and aluminum are deposited by an electrochemical process into the pores of n-type porous silicon which is anodized with ultraviolet light applied during formation. The presence of these metal atoms in the porous layer is checked by electron microprobe measurement. As reported previously, UV-light etched material shows red photoluminescence (630 nm) and blue electroluminescence (470 nm) without the metal treatment. After metal deposition the photoluminescence intensity decreases slightly (factor 0.5 - 0.8), whereas the spectral position remains constant. The electroluminescence efficiency is significantly enhanced by indium, aluminum and tin in the pores (factor 5 - 90). The tin and antimony treatment causes a red shift to 580 nm and 740 nm, respectively. The conductivity is slightly increased by all kinds of metals by a factor 2-5.

An electrochemically deposited graphene@Mn3O4 composite film for supercapacitors

RSC Advances ◽  
2015 ◽  
Vol 5 (130) ◽  
pp. 107977-107981 ◽  
Author(s):  
Suzhen Cheng ◽  
Shuo Li ◽  
Ji Xia ◽  
Tianhui Lei ◽  
Quansheng Zhang ◽  
...  
Keyword(s):  
Composite Film ◽  
Electrochemical Deposition ◽  
Network Structure ◽  
Electrochemically Deposited

A graphene@Mn3O4 composite film with a 3D nanoporous network structure has been successfully fabricated via electrochemical deposition.

Morphology and I-V Characteristics of Electrochemically Deposited Zinc Oxide on Silicon

2021 ◽  
Vol 20 (3) ◽  
pp. 32-36
Author(s):  
Ahmad Bukhairi Md Rashid ◽  
Mastura Shafinaz Zainal Abidin ◽  
Shaharin Fadzli Abd Rahman ◽  
Amirjan Nawabjan
Keyword(s):  
Zinc Oxide ◽  
Electrochemical Deposition ◽  
Dark Current ◽  
Room Temperature ◽  
Volume Ratio ◽  
Deposition Process ◽  
X Ray ◽  
Current Voltage ◽  
Electrochemically Deposited ◽  
A Current

This paper reported on the electrochemical deposition of zinc oxide (ZnO) on p-silicon (p-Si) (100) substrate in the mixture of 0.1 M of zinc chloride (ZnCl2) and potassium chloride (KCl) electrolyte at a volume ratio of 1:1, 3:1 and 5:1 namely Sample A, B and C. The deposition process was done in room temperature with a current density of 10 mA/cm2 for 30 minutes. Prior to the experiment, all samples were treated by RCA cleaning steps. All samples were characterized using scanning electron microscopy (SEM) and energy dispersive X-ray (EDX). The results show that all samples have the same morphology of a flake-like structure with different Zn:O ratio that were 2.81, 2.35 and 2.49 for samples A, B and C. The current-voltage (I-V) characteristic graph was obtained by dark current measurement using Keithley SMU 2400 and the threshold voltage (Vth) values were determined at 2.21 V, 0.85 V and 1.22 V for sample A, B and C respectively which correspond with the Zn:O ratio where the highest value of Zn:O ratio can be found in sample A and the lowest in sample B. Based on these results, it shows that electrochemical deposition technique is capable of being used to deposit the flake-like structure ZnO on semiconductor material to form the p-n junction which behaves like a diode. The value of Vth seems to be depended on the ratio between Zn and O. Higher ratio of Zn and O will cause the higher value of intrinsic carrier concentration and built in potential which will increase the Vth value.

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