Amorphous/Crystalline Silicon Two Terminal Visibleænfrared Tunable Photodetector: Modeling and Realization

1997 ◽  
Vol 467 ◽  
Author(s):  
G. De Cesare ◽  
F. Irrera ◽  
M. Tucci

ABSTRACTDifference in the absorption coefficient profile of the amorphous and crystalline silicon is the key idea for the realization of a new visible/infrared tunable photodetector (VIP). The device consists on a n-doped a-Si:H/intrinsic a-Si:H/p-doped a-SiC:H multilayer grown by PECVD on a p-type crystalline silicon wafer doped by a phosphourus diffusion. A grid-shaped aluminum front contact with transparent conductive oxide coating is used as window for the incident light. Tunable sensitivity in the visible and near infrared spectral range can be achieved under different values of the external voltage, with excellent spectral separation between the two quantum efficiencies peaks at 480 nm and 800 nm.A simple analytical model taking into account the absorption profile, diffusion and drift lengths, and layer thicknesses reproduces fairly well the experimental results.

JETP Letters ◽  
2020 ◽  
Vol 112 (1) ◽  
pp. 31-36
Author(s):  
V. I. Kukushkin ◽  
V. E. Kirpichev ◽  
E. N. Morozova ◽  
V. V. Solov’ev ◽  
Ya. V. Fedotova ◽  
...  

2003 ◽  
Vol 42 (22) ◽  
pp. 4415 ◽  
Author(s):  
Chris Hicks ◽  
Mark Kalatsky ◽  
Richard A. Metzler ◽  
Alexander O. Goushcha

2002 ◽  
Vol 47 (12) ◽  
pp. 2059-2073 ◽  
Author(s):  
A N Yaroslavsky ◽  
P C Schulze ◽  
I V Yaroslavsky ◽  
R Schober ◽  
F Ulrich ◽  
...  

Author(s):  
А.Я. Виноградов ◽  
С.А. Грудинкин ◽  
Н.А. Беседина ◽  
С.В. Коняхин ◽  
М.К. Рабчинский ◽  
...  

AbstractThe structural, electrical, and optical properties of thin graphite-like films produced by magnetron- assisted sputtering onto crystalline silicon and quartz at substrate temperatures in the range from 320 to 620°C are studied. From analysis of the Raman spectra, it is established that, as the substrate temperature is elevated, the crystallite size increases and the concentration of structural defects and the content of amorphous carbon in the phase composition of the films decrease. It is found that, as the substrate temperature is elevated, the maximum of the absorption intensity in the ultraviolet spectral region of the optical absorption spectra shifts to longer wavelengths and the absorption intensity in the visible and near-infrared spectral regions increases. As the deposition temperature is elevated, the conductivity of the films increases from 0.2 Ω^–1 cm^–1 at 320°C to 30 Ω^–1 cm^–1 at 620°C.


2010 ◽  
Vol 36 (6) ◽  
pp. 657-662 ◽  
Author(s):  
N. V. Golubev ◽  
V. I. Savinkov ◽  
E. S. Ignat’eva ◽  
S. V. Lotarev ◽  
P. D. Sarkisov ◽  
...  

2018 ◽  
Vol 20 (27) ◽  
pp. 18862-18872 ◽  
Author(s):  
K. Kinastowska ◽  
K. Piela ◽  
M. Gordel ◽  
A. Żak ◽  
R. Kołkowski ◽  
...  

The nonlinear absorption performance of plasmonic nanoparticle-decorated graphene sheets in aqueous dispersion has been investigated over a broad spectral range using the f-scan technique.


Materials ◽  
2020 ◽  
Vol 13 (10) ◽  
pp. 2376 ◽  
Author(s):  
Song-Sheng Lin ◽  
Qian Shi ◽  
Ming-Jiang Dai ◽  
Kun-Lun Wang ◽  
Sheng-Chi Chen ◽  
...  

CuCrO2 is one of the most promising p-type transparent conductive oxide (TCO) materials. Its electrical properties can be considerably improved by Mg doping. In this work, Cr-deficient CuCrO2 thin films were deposited by reactive magnetron sputtering based on 5 at.% Mg doping. The influence of Cr deficiency on the film’s optoelectronic properties was investigated. As the film’s composition varied, CuO impurity phases appeared in the film. The mixed valency of Cu+/Cu2+ led to an enhancement of the hybridization between the Cu3d and O2p orbitals, which further reduced the localization of the holes by oxygen. As a result, the carrier concentration significantly improved. However, since the impurity phase of CuO introduced more grain boundaries in Cu[Cr0.95−xMg0.05]O2, impeding the transport of the carrier and incident light in the film, the carrier mobility and the film’s transmittance reduced accordingly. In this work, the optimal optoelectronic performance is realized where the film’s composition is Cu[Cr0.78Mg0.05]O2. Its Haacke’s figure of merit is about 1.23 × 10−7 Ω−1.


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