Microstructure Evolution of Amorphous Si1-xGex Thin Films
Keyword(s):
ABSTRACTThe composition dependence of the nucleation free energy barrier W* in amorphous Si1-xGex thin films is investigated. Within the composition range of x = 0.25 ∼ 0.52, the nucleation free energy barrier exhibits a maximum, which is in a good agreement with our theoretical analysis. The results are significant for processing polycrystalline SiGe thin films with desirable microstructures for thin film transistor applications. In addition, the incubation time of crystallization of amorphous Si1-xGex (x=0.5) thin films is investigated as a function of temperature.
Keyword(s):
1995 ◽
Vol 52
(23)
◽
pp. 16753-16761
◽
Keyword(s):
2012 ◽
Vol 11
(02)
◽
pp. 437-481
◽
Keyword(s):
2018 ◽
Vol 17
(08)
◽
pp. 1850050
◽
Keyword(s):
Keyword(s):
2011 ◽
Vol 503
(1-3)
◽
pp. 139-144
◽
Keyword(s):
2013 ◽
Vol 12
(08)
◽
pp. 1341004
2011 ◽
Vol 550
(1)
◽
pp. 13-22
◽
2020 ◽
Vol 22
(5)
◽
pp. 1901430
◽
Keyword(s):