Perpendicular Giant Magnetoresistance of Co/Cu Multilayers with Fluctuating Co Layer Thicknesses

1997 ◽  
Vol 475 ◽  
Author(s):  
Wen-C. Chiang ◽  
R. Loloee ◽  
W.P. Pratt ◽  
J. Bass

ABSTRACTJ. Mathon has predicted that introducing pseudorandom fluctuations (PRF) in the Co layer thickness could greatly enhance the Current Perpendicular to the Plane (CPP) magnetoresistance (MR) of a Co/Cu superlattice with dimensions comparable to the electron mean-free-path. We have searched for CPP-MR enhancement in sputtered Co/Cu multilayers with Cu layer thicknesses near both the first and second antiferromagnetically coupled peaks in the oscillatory region of the CPP-MR. In both cases, inserting PRF only decreased the CPP-MR.

1993 ◽  
Vol 313 ◽  
Author(s):  
W. Y. Lee ◽  
V. R. Deline ◽  
G. Gorman ◽  
A. Kellock ◽  
D. Miller ◽  
...  

ABSTRACTGiant Magnetoresistance (GMR) is reported in as-deposited Ag1−xCox (x = 0.26–0.53) films co-sputtered on Si from separate Ag and Co targets. GMR ratios (10 K Oe Maximum field) exceeding 0.50 and 0.19 at 5 and 295 K, respectively, are observed for the Ag067Co033 films deposited at ≃28 to 175 °C. The Maximum ratios of 0.55 and 0.24 occur at a substrate temperature of ≃125 °C for these films. The ratios decrease rapidly for the films deposited at temperatures > 175 °C and reduce to ≃0.15 and 0.04 at deposition temperatures >300 °C. This deposition temperature dependence of GMR ratios is interpreted in terms of the change in the spin-dependent interfacial electron scatterings due to the change in the size and number of ferromagnetic Co particles within the electron mean free path. The initial increase and the subsequent decrease in GMR ratios with increasing deposition temperature are attributed to the increase in the mean free path, and the Co and Ag particle size, respectively. Changes in mean free path are obtained from the resistivities of these films while changes in Ag and Co particles are deduced mainly from the X-ray diffraction patterns, transmission electron Micrographs, and the coercivities of these films.


2000 ◽  
Author(s):  
Taofang Zeng ◽  
Gang Chen

Abstract When electrons sweep through a double-heterojunction structure, there exist thermionic effects at the junctions and thermoelectric effects in the film. While both thermoelectric and thermionic effects have been studied for refrigeration and power generation applications separately, their interplay in heterostructures is not understood. This paper establishes a unified model including both thermionic and thermoelectric processes based on the Boltzmann transport equation for electrons, and the nonequilibrium interaction between electrons and phonons. Approximate solutions are obtained, leading to the electron temperature and Fermi level distributions inside heterostructures and discontinuities at the interfaces as a consequence of the highly nonequilibrium transport when the film thickness is much smaller than the electron mean free path. It is found that when the film thickness is smaller than the mean free path of electrons, the transport of electrons is controlled by thermionic emission. The coexistence of thermoelectric and thermionic effects may increase the power factor when the electron mean free path is comparable to the film thickness.


2004 ◽  
Vol 566-568 ◽  
pp. 532-537 ◽  
Author(s):  
N. Barrett ◽  
E.E. Krasovskii ◽  
J.-M. Themlin ◽  
V.N. Strocov

1985 ◽  
Vol 149 (2-3) ◽  
pp. 349-365 ◽  
Author(s):  
H. Tokutaka ◽  
K. Nishimori ◽  
H. Hayashi

Sign in / Sign up

Export Citation Format

Share Document