Lifetime Characterization of Poly-Silicon Back Sealed Wafers with Bi-Surface Photoconductivity Decay Method

MRS Proceedings ◽

10.1557/proc-477-329 ◽

1997 ◽

Vol 477 ◽

Author(s):

Y. Ogita ◽

Y. Uematsu ◽

H. Daio

Keyword(s):

Thermal Oxidation ◽

Wave Reflection ◽

Surface Recombination ◽

Silicon Wafers ◽

Surface Recombination Velocity ◽

Poly Silicon ◽

Photoconductivity Decay ◽

Recombination Velocity

ABSTRACTBi-surface photoconductivity decay (BSPCD) method has been useful to obtain the true bulk lifetime and surface recombination velocities in silicon wafers with variously finished surfaces. Thermally oxidized n-type CZ silicon wafers with and without a poly-Si back seal (PBS) were characterized with the BSPCD method using 500 MHz-UHF wave reflection. It has been found that the surface recombination velocity of the PBS surface is, 4027 cm/s while that of the no-PBS surface is 16 cm/s, for example. The very fast surface recombination velocity is attributed to the poly-Si / Si interface character. Moreover, the bulk lifetime calculated in the PBS wafer is much higher than that in the no-PBS one, which reveals the PBS gettering performance for the thermal oxidation induced contamination.

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Characterization of the Surface Recombination Velocity of HgCdTe Using a Gate-Controlled Diode

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.l152 ◽

2000 ◽

Vol 39 (Part 2, No. 2B) ◽

pp. L152-L155 ◽

Cited By ~ 7

Author(s):

Jong-Hwa Choi ◽

Hee Chul Lee

Keyword(s):

Surface Recombination ◽

Surface Recombination Velocity ◽

Recombination Velocity

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Measurement of surface recombination velocity of silicon wafers under sunlight condition by novel photoluminescence surface state spectroscopy

Solar Energy Materials and Solar Cells ◽

10.1016/0927-0248(94)90036-1 ◽

1994 ◽

Vol 34 (1-4) ◽

pp. 161-167 ◽

Cited By ~ 2

Author(s):

Toshiya Saitoh ◽

Youichiro Nishimoto ◽

Hideki Hasegawa

Keyword(s):

Surface State ◽

Surface Recombination ◽

Silicon Wafers ◽

Surface Recombination Velocity ◽

Recombination Velocity

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Interface Study Of Nanocrystalline Silicon and Crystalline Silicon Using Microwave Photoconductivity Decay

MRS Proceedings ◽

10.1557/proc-0910-a04-04 ◽

2006 ◽

Vol 910 ◽

Author(s):

Mahdi Farrokh Baroughi ◽

Siva Sivoththaman

Keyword(s):

Crystalline Silicon ◽

Surface Recombination ◽

Chemical Vapor ◽

Nanocrystalline Silicon ◽

Interface Region ◽

Surface Recombination Velocity ◽

Si Substrate ◽

Photoconductivity Decay ◽

Recombination Velocity ◽

Si Films

AbstractThis paper presents a measurement technique for studying of the interface between a nanocrystalline silicon (nc-Si) film and a crystalline silicon (c-Si) substrate using microwave photoconductivity decay (MWPCD). The nc-Si films were deposited using plasma enhanced chemical vapor deposition of highly hydrogen-diluted silane. The films were deposited on both sides of the high purity float-zone (FZ) Si wafers. The high resolution transmission electron microscope (HRTEM) analysis of the interface and the characterization of the effective excess carrier lifetime of the samples using MWPCD revealed the following results: (i) The crystallinity of the deposited nc-Si films is very high. The nc-Si film follows the crystal orientation of the substrate such that not a well-defined boundary between nc-Si film and the c-Si substrate is observed. (ii) A surface recombination velocity of less than 10 cm/s was measured for the interface region of the nc-Si/c-Si junctions. (iii) A small discontinuity in the band-energy diagram of the interface region was observed.

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Crystal-orientation dependence of surface recombination velocity for silicon nitride passivated silicon wafers

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 ◽

10.1109/pvsc.1996.564049 ◽

1996 ◽

Cited By ~ 8

Author(s):

F.M. Schuurmans ◽

A. Schonecker ◽

J.A. Eikelboom ◽

W.C. Sinke

Keyword(s):

Silicon Nitride ◽

Crystal Orientation ◽

Surface Recombination ◽

Orientation Dependence ◽

Silicon Wafers ◽

Surface Recombination Velocity ◽

Recombination Velocity ◽

Passivated Silicon

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Surface recombination velocity on wet-cleaned silicon wafers using heterodyne lock-in ca rrierography imaging: measurement uniqueness investigation

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab7844 ◽

2020 ◽

Vol 35 (5) ◽

pp. 055013

Author(s):

Peng Song ◽

Alexander Melnikov ◽

Qiming Sun ◽

Robert H Pagliaro ◽

Xiaogang Sun ◽

...

Keyword(s):

Surface Recombination ◽

Silicon Wafers ◽

Surface Recombination Velocity ◽

Recombination Velocity ◽

Lock In

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Characterization of Plasma Induced Damage and Strain on InP Patterns and Their Impact on Luminescence

MRS Advances ◽

10.1557/adv.2018.448 ◽

2018 ◽

Vol 3 (57-58) ◽

pp. 3373-3378

Author(s):

Marc Fouchier ◽

Maria Fahed ◽

Erwine Pargon ◽

Névine Rochat ◽

Jean-Pierre Landesman ◽

...

Keyword(s):

Surface Recombination ◽

Peak Shift ◽

Surface Recombination Velocity ◽

Degree Of Polarization ◽

Strain Anisotropy ◽

Luminescence Signal ◽

Micron Size ◽

Recombination Velocity ◽

Cathodoluminescence Intensity

ABSTRACTThe effect of damage induced by plasma etching on the cathodoluminescence intensity of micron-size InP features is studied. At the etched bottom, it is found that the hard mask stripping process is sufficient to recover the luminescence. Within features, the presence of sidewalls reduces luminescence intensity due to additional non-radiative surface recombinations. For a n-doped sample, a carrier diffusion length of 0.84 μm and a reduced nonradiative surface recombination velocity of 2.58 are calculated. Hydrostatic strain within the etched features is measured using the peak shift of the luminescence signal, while in plane strain anisotropy is obtained from its degree of polarization, both with a resolution of about 100 nm.

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