Characterization of the Surface Recombination Velocity of HgCdTe Using a Gate-Controlled Diode

2000 ◽  
Vol 39 (Part 2, No. 2B) ◽  
pp. L152-L155 ◽  
Author(s):  
Jong-Hwa Choi ◽  
Hee Chul Lee
Keyword(s):  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Recombination Velocity

Characterization of Plasma Induced Damage and Strain on InP Patterns and Their Impact on Luminescence

MRS Advances ◽  
2018 ◽  
Vol 3 (57-58) ◽  
pp. 3373-3378
Author(s):  
Marc Fouchier ◽  
Maria Fahed ◽  
Erwine Pargon ◽  
Névine Rochat ◽  
Jean-Pierre Landesman ◽  
...  
Keyword(s):  
Surface Recombination ◽  
Peak Shift ◽  
Surface Recombination Velocity ◽  
Degree Of Polarization ◽  
Strain Anisotropy ◽  
Luminescence Signal ◽  
Micron Size ◽  
Recombination Velocity ◽  
Cathodoluminescence Intensity

ABSTRACTThe effect of damage induced by plasma etching on the cathodoluminescence intensity of micron-size InP features is studied. At the etched bottom, it is found that the hard mask stripping process is sufficient to recover the luminescence. Within features, the presence of sidewalls reduces luminescence intensity due to additional non-radiative surface recombinations. For a n-doped sample, a carrier diffusion length of 0.84 μm and a reduced nonradiative surface recombination velocity of 2.58 are calculated. Hydrostatic strain within the etched features is measured using the peak shift of the luminescence signal, while in plane strain anisotropy is obtained from its degree of polarization, both with a resolution of about 100 nm.

Lifetime Characterization of Poly-Silicon Back Sealed Wafers with Bi-Surface Photoconductivity Decay Method

1997 ◽  
Vol 477 ◽  
Author(s):  
Y. Ogita ◽  
Y. Uematsu ◽  
H. Daio
Keyword(s):  
Thermal Oxidation ◽  
Wave Reflection ◽  
Surface Recombination ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Poly Silicon ◽  
Photoconductivity Decay ◽  
Recombination Velocity

ABSTRACTBi-surface photoconductivity decay (BSPCD) method has been useful to obtain the true bulk lifetime and surface recombination velocities in silicon wafers with variously finished surfaces. Thermally oxidized n-type CZ silicon wafers with and without a poly-Si back seal (PBS) were characterized with the BSPCD method using 500 MHz-UHF wave reflection. It has been found that the surface recombination velocity of the PBS surface is, 4027 cm/s while that of the no-PBS surface is 16 cm/s, for example. The very fast surface recombination velocity is attributed to the poly-Si / Si interface character. Moreover, the bulk lifetime calculated in the PBS wafer is much higher than that in the no-PBS one, which reveals the PBS gettering performance for the thermal oxidation induced contamination.

Characterization of Polycrystalline Silicon Thin Films by Photoluminescence

1990 ◽  
Vol 182 ◽  
Author(s):  
R. Pandya ◽  
K. Shahzad
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Qualitative Explanation ◽  
Silicon Thin Films ◽  
Pl Spectrum ◽  
Recombination Velocity ◽  
Quartz Substrates

AbstractPhotoluminescence (PL) measurements have been carried out in hydrogenated and as deposited polycrystalline silicon thin films deposited on quartz substrates. Behavior of the PL spectrum as a function of temperature and intensity in the hydrogenated samples is reported. A mechanism that provides a qualitative explanation for the observed PL results is described. In the unhydrogenated sample the signal was much weaker and we were unable to observe any signals over an appreciable range of intensity and temperatures. The cause for much lower signals in the unhydrogenated sample is most likely due to higher surface recombination velocity.

Contactless Characterization of the Surface Property of the Si+-Implanted GaAs

1994 ◽  
Vol 347 ◽  
Author(s):  
Akira Usami ◽  
Hideaki Yoshida ◽  
Masaya Ichimura ◽  
Takao Wada
Keyword(s):  
Surface Property ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Effective Surface ◽  
Calculation Results ◽  
Concentration Layer ◽  
High Carrier ◽  
Recombination Velocity ◽  
Microwave Probe

ABSTRACTThe surface recombination of GaAs which has a high carrier concentration layer (HCCL) formed by Si+ implantation has been investigated using the reflectance microwave probe (RMP) method. The RMP method enables us to evaluate the surface property of GaAs contactlessly and easily. The experimental results of the samples which were implanted with doses ranging from 1.0×1011 to 3.9×1012cm-2 at an energy of lOOke V indicate that the effective surface recombination velocity decreases with dosage because of HCCL formed after the annealing. On the other hand, the results of the samples which were implanted with a dose of 3.9 × 1012cm-2 at energies ranging from 30 to 180keV indicate that the effective surface recombination velocity increases with energy for energies larger than 50keV. We understood the reason by comparing with the numerical calculation results of an effective surface recombination velocity at a high-low junction interface.

Characterization of nitrided silicon-silicon dioxide interfaces

1999 ◽  
Vol 591 ◽  
Author(s):  
M. L. Polignano ◽  
M. Alessandri ◽  
D. Brazzelli ◽  
B. Crivelli ◽  
G. Ghidini ◽  
...  
Keyword(s):  
Surface State ◽  
Surface Recombination ◽  
State Density ◽  
Constant Current ◽  
Surface Recombination Velocity ◽  
State Reduction ◽  
Surface State Density ◽  
Recombination Velocity ◽  
Silicon Interface

ABSTRACTA newly-developed technique for the simultaneos characterization of the oxide-silicon interface properties and of bulk impurities was used for a systematic study of the nitridation process of thin oxides. This technique is based upon surface recombination velocity measurements, and does not require the formation of a capacitor structure, so it is very suitable for the characterization of as-grown interfaces.Oxides grown both in dry and in wet enviroments were considered, and nitridation processes in N2O and in NO were compared to N2 annealing processes. The effect of nitridation temperature and duration were also studied, and RTO/RTN processes were compared to conventional furnace nitridation processes.Surface recombination velocity was correlated with nitrogen concentration at the oxide-silicon interface obtained by Secondary Ion Mass Spectroscopy (SIMS) measurements. Surface recombination velocity (hence surface state density) decreases with increasing nitrogen pile-up at the oxide-silicon interface, indicating that in nitrided interfaces surface state density is limited by nitridation. NO treatments are much more effective than N2O treatments in the formation of a nitrogen-rich interface layer and, as a consequence, in surface state reduction.Surface state density was measured in fully processed wafers before and after constant current stress. After a complete device process surface states are annealed out by hydrogen passivation, however they are reactivated by the electrical stress, and surface state results after stress were compared with data of surface recombination velocity in as-processed wafers.

scholarly journals Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Metal Interface ◽  
Ag Crystallites ◽  
Recombination Velocity

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

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