Organometallic Chemical Vapor Deposition of Group-III Nitride Thin Films using Single Source Precursors

1997 ◽  
Vol 482 ◽  
Author(s):  
Roland A. Fischer ◽  
Wolfram Rogge
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Decomposition Temperature ◽  
The Novel ◽  
Single Source ◽  
Single Source Precursors ◽  
Group Iii ◽  
Group Iii Nitride

AbstractThe OMCVD of AlN, GaN and InN thin films using the novel single source precursors (N3)2Ga[(CH2)3NMe2] (1), (N3)In[(CH2)3NMe2]2 (2) and (N3)Al(CH2)3NMe2]2 (3) is reported. The compounds are non-pyrophoric. Compound 2 is air stable. No additional N-sources were used for the growth of the nitrides. We achieved epitaxial (AlN, GaN) or polycrystalline (InN) growth at least 200°C below the decomposition temperature of the respective nitride. Some aspects of the reactivity of the precursors with ammonia and the resulting influence on the deposition process were investigated.

Group III Metal Sulfide Thin Films From Single-Source Precursors by Chemical Vapor Deposition (CVD) Techniques

1999 ◽  
Vol 606 ◽  
Author(s):  
Mike R. Lazell ◽  
Paul O'brien ◽  
David J. Otway ◽  
Jin-Ho Park
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Metal Sulfide ◽  
Chemical Vapor ◽  
Single Source ◽  
Group 13 ◽  
Single Source Precursors ◽  
Group Iii

AbstractSeveral single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.

scholarly journals N,N-Disubstituted-N′-acylthioureas as modular ligands for deposition of transition metal sulfides

2018 ◽  
Vol 47 (8) ◽  
pp. 2719-2726 ◽  
Author(s):  
Zahra Ali ◽  
Nathaniel E. Richey ◽  
Duane C. Bock ◽  
Khalil A. Abboud ◽  
Javeed Akhtar ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Vapor Deposition ◽  
Metal Sulfide ◽  
Chemical Vapor ◽  
Metal Sulfides ◽  
Single Source ◽  
Transition Metal Sulfides ◽  
Single Source Precursors

Readily available N,N-disubstituted-N′-acylthiourea complexes are single source precursors for aerosol assisted chemical vapor deposition of metal sulfide thin films.

Correction to Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD)

2014 ◽  
Vol 26 (10) ◽  
pp. 3348-3348 ◽  
Author(s):  
Karthik Ramasamy ◽  
Vladimir L. Kuznetsov ◽  
Kandasamy Gopal ◽  
Mohammad A. Malik ◽  
James Raftery ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tin Sulfide ◽  
Single Source ◽  
Single Source Precursors

Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD)

2013 ◽  
Vol 25 (3) ◽  
pp. 266-276 ◽  
Author(s):  
Karthik Ramasamy ◽  
Vladimir L. Kuznetsov ◽  
Kandasamy Gopal ◽  
Mohammad A. Malik ◽  
James Raftery ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tin Sulfide ◽  
Single Source ◽  
Single Source Precursors

Iron Sulfide (FeS2) Thin Films From Single-Source Precursors by Aerosol-Assisted Chemical Vapor Deposition (AACVD)

1999 ◽  
Vol 606 ◽  
Author(s):  
Paul O'Brien ◽  
David J. Otway ◽  
Jin-Ho Park
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Iron Sulfide ◽  
Chemical Vapor ◽  
Analytical Techniques ◽  
Single Source ◽  
Sem Images ◽  
Organic Precursor ◽  
Single Source Precursors

AbstractDialkyl (or mixed alkyl)-dithiocarbamato iron(III) complexes have been used for the deposition of iron sulfide thin films using chemical vapor deposition techniques. The single-source precursors used in this work have been prepared by the reaction of FeCl3with dialkyldithiocarbamate sodium salts and characterized by a number of analytical techniques. Good quality thin films of FeS2 have been prepared from the single-source metal organic precursor, [Fe(S2CNMeiPr)3], by AACVD. XRD patterns of the films indicated crystalline iron sulfide (FeS2) grown at between 375 – 450 °C. SEM images show the films to have reasonable morphology and to be crystalline.

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