In Situ Spectroscopic Ellipsometry for Real Time Composition Control of Hg1−xcdx Te Grown by Molecular Beam Epitaxy
Keyword(s):
AbstractSpectral ellipsometry (SE) was applied to in situ composition control of Hg1−xCdxTe grown by molecular beam epitaxy (MBE), and the impact of surface topography of the Hg1−xCdxTe layers on the accuracy of SE was investigated. Of particular importance is the presence of surface defects, such as voids in MBE- Hg1−xCdx.Te layers. While dislocations do not have any significant impact on the dielectric functions, the experimental data in this work show that MBE- Hg1−xCdxTe samples having the same composition, but different void densities, have different effective dielectric functions.
1997 ◽
Vol 173
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pp. 5-13
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1993 ◽
Vol 63
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pp. 1-8
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2009 ◽
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pp. 1652-1660
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2008 ◽
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pp. 1049
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2000 ◽
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pp. 1381
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1987 ◽
Vol 5
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pp. 3139-3142
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2007 ◽
Vol 301-302
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pp. 496-499
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