Molecular beam epitaxy III-nitride growth for polarization sensitive devices based on M-plane films with in situ real time analysis by spectroscopic ellipsometry

2008 ◽  
Vol 26 (3) ◽  
pp. 1049 ◽  
Author(s):  
C. Boney ◽  
P. Misra ◽  
R. Pillai ◽  
D. Starikov ◽  
A. Bensaoula
Keyword(s):  
Molecular Beam Epitaxy ◽  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Molecular Beam ◽  
Time Analysis ◽  
Real Time Analysis

Real-Time Analysis Of In-Situ Spectroscopic Ellipsometric Data During Mbe Growth Of III-V Semiconductors

1991 ◽  
Vol 222 ◽  
Author(s):  
B. Johs ◽  
J. L. Edwards ◽  
K. T. Shiralagi ◽  
R. Droopad ◽  
K. Y. Choi ◽  
...  
Keyword(s):  
Real Time ◽  
Optical Constants ◽  
Growth Parameters ◽  
Ex Situ ◽  
Time Analysis ◽  
Mbe Growth ◽  
In Situ Data ◽  
Real Time Analysis

ABSTRACTA modular spectroscopic ellipsometer, capable of both in-situ and ex-situ operation, has been used to measure important growth parameters of GaAs/AIGaAs structures. The ex-situ measurements provided layer thicknesses and compositions of the grown structures. In-situ ellipsometric measurements allowed the determination of growth rates, layer thicknesses, and high temperature optical constants. By performing a regression analysis of the in-situ data in real-time, the thickness and composition of an AIGaAs layer were extracted during the MBE growth of the structure.

In situ spectroscopic ellipsometry in molecular beam epitaxy for photonic devices

1993 ◽  
Vol 63 (1-4) ◽  
pp. 1-8 ◽  
Author(s):  
G.N. Maracas ◽  
J.L. Edwards ◽  
D.S. Gerber ◽  
R. Droopad
Keyword(s):  
Molecular Beam Epitaxy ◽  
Spectroscopic Ellipsometry ◽  
Molecular Beam ◽  
Photonic Devices

scholarly journals In-Situ and Real-Time Analysis of the Formation of Strains and Microstructure Defects during Solidification of Al-3.5 Wt Pct Ni Alloys

2008 ◽  
Vol 39 (4) ◽  
pp. 865-874 ◽  
Author(s):  
G. Reinhart ◽  
A. Buffet ◽  
H. Nguyen-Thi ◽  
B. Billia ◽  
H. Jung ◽  
...  
Keyword(s):  
Real Time ◽  
Time Analysis ◽  
Ni Alloys ◽  
Real Time Analysis

In Situ Spectroscopic Ellipsometry for Real Time Composition Control of Hg1−xcdx Te Grown by Molecular Beam Epitaxy

1997 ◽  
Vol 487 ◽  
Author(s):  
R. Dat ◽  
F. Aqariden ◽  
W. M. Duncan ◽  
D. Chandra ◽  
H. D. Shih
Keyword(s):  
Experimental Data ◽  
Molecular Beam Epitaxy ◽  
Surface Topography ◽  
Spectroscopic Ellipsometry ◽  
Molecular Beam ◽  
Surface Defects ◽  
Spectral Ellipsometry ◽  
Composition Control ◽  
The Impact

AbstractSpectral ellipsometry (SE) was applied to in situ composition control of Hg1−xCdxTe grown by molecular beam epitaxy (MBE), and the impact of surface topography of the Hg1−xCdxTe layers on the accuracy of SE was investigated. Of particular importance is the presence of surface defects, such as voids in MBE- Hg1−xCdx.Te layers. While dislocations do not have any significant impact on the dielectric functions, the experimental data in this work show that MBE- Hg1−xCdxTe samples having the same composition, but different void densities, have different effective dielectric functions.

In situ and real-time analysis of TGZM phenomena by synchrotron X-ray radiography

2008 ◽  
Vol 310 (11) ◽  
pp. 2906-2914 ◽  
Author(s):  
H. Nguyen Thi ◽  
G. Reinhart ◽  
A. Buffet ◽  
T. Schenk ◽  
N. Mangelinck-Noël ◽  
...  
Keyword(s):  
Real Time ◽  
Time Analysis ◽  
X Ray ◽  
Real Time Analysis
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