Optical Characterization of C60 Organic Semiconductor and Bilayers

1997 ◽  
Vol 488 ◽  
Author(s):  
J. P. Rainho ◽  
L. Santos ◽  
A. A. Kharlamov
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Optical Absorption ◽  
Film Thickness ◽  
Organic Semiconductor ◽  
Optical Characterization ◽  
Organic Dye ◽  
Zinc Phthalocyanine ◽  
Micro Raman Spectroscopy

AbstractPreparation and characterization either by optical absorption, photoluminescence and micro-Raman spectroscopy of individual components as well as bilayers consisting of organic dye semiconductor Zinc Phthalocyanine (ZnPc) and fullerene, C60, thin films are reported. The layers and structures were deposited in vacuum and some fullerene films were also prepared by casting the C60 solution in benzene. The optical absorption and photoluminescence dependencies on film thickness in bilayers C60/ZnPc were observed and may be discussed in a context of interface induced simmetry reduction of C60 molecules.

scholarly journals Characterization of Thermally Evaporated Ag-Ge-S Thin Films

2008 ◽  
Vol 1072 ◽  
Author(s):  
Fei Wang ◽  
William Porter Dunn ◽  
Mukul Jain ◽  
Carter De Leo ◽  
Nicholas Vicker ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Raman Spectroscopy ◽  
Film Thickness ◽  
Raman Line ◽  
Line Shapes ◽  
Thermal Evaporator ◽  
Bulk Glasses ◽  
Deposited Films

ABSTRACTThin films of ternary (GeS3)1−xAgx glasses (x=0.1 and 0.2) are studied in this work. Thin films are fabricated in a vacuum thermal evaporator at 3 different evaporation angles (0°, 30° and 45°). All thin film samples are examined in Raman spectroscopy. Raman results of both normally and obliquely deposited thin film samples reveal Ge-S CS modes (∼340cm−1) , Ge-S ES (∼360cm−1) modes, and thiogermanate modes Q1∼Q3 (390cm−1∼437cm−1). In addition, sharp peaks due to sulfur rings (S8) are observed at 218cm−1 and 470cm−1. Raman line-shapes of thin films are qualitatively consistent with their corresponding bulk glasses. However, the sharp peaks due to sulfur rings were not observed in bulk glasses. By comparing CS modes of thin films of three angles, we observe that normally deposited (0 degree) thin film shows a red-shift in center and a broadening in width. The film thickness of normally deposited films are significantly smaller comparing with that of corresponding obliquely deposited films.

Urbach Edge, Disorder, and Absorption On-set in a-Si:H

2005 ◽  
Vol 862 ◽  
Author(s):  
G. D. Cody
Keyword(s):  
Thin Films ◽  
Standard Model ◽  
Optical Absorption ◽  
Amorphous Silicon ◽  
Absorption Edge ◽  
Optical Characterization ◽  
Theoretical Development ◽  
Current Status ◽  
Optical Absorption Edge

AbstractThis paper presents a brief review of the research that began in the early '80s, continued through the '90s, and produced a “standard model” for the optical absorption edge of amorphous silicon. The research began as a response to the invention of a-Si:H solar cells by Carlson and Wronski at RCA laboratories in 1976, and the subsequent worldwide interest in the optical characterization of a-Si:H thin films. The immediate need was soon met, but the research continued as an effort to understand the physics of the optical absorption edge in a-Si:H, as well as to understand the differences between, and similarities to, the indirect optical absorption edge of c-Si. In this paper, we highlight the successes of this standard model, and briefly cover its experimental and theoretical development over the last 25 years. We summarize its current status, and suggest some experimental and theoretical opportunities for, and challenges to, what may now be called a standard model for the optical absorption edge of both a-Si:H and a-Ge:H.

Characterization of 〈111〉 diamond thin films by micro-Raman spectroscopy

2004 ◽  
Vol 13 (4-8) ◽  
pp. 886-890 ◽  
Author(s):  
M. Mermoux ◽  
A. Tajani ◽  
B. Marcus ◽  
E. Bustarret ◽  
E. Gheeraert ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Micro Raman Spectroscopy ◽  
Diamond Thin Films

Optical Characterization of Sputter Deposited CdS Thin Films and Measurement of Deposition Rate

2020 ◽  
Author(s):  
E.M.K. Ikball Ahamed ◽  
N.K. Das ◽  
S.F.U. Farhad ◽  
M.N.I. Khan ◽  
M.A. Matin ◽  
...  
Keyword(s):  
Thin Films ◽  
Deposition Rate ◽  
Optical Characterization ◽  
Cds Thin Films ◽  
Sputter Deposited

Optical Absorption Spectroscopy of DNA-Wrapped HiPco Carbon Nanotubes

2019 ◽  
Vol 943 ◽  
pp. 95-99
Author(s):  
Li Jun Wang ◽  
Kazuo Umemura
Keyword(s):  
Carbon Nanotubes ◽  
Aqueous Solution ◽  
Optical Absorption ◽  
Absorption Spectroscopy ◽  
Near Infrared ◽  
Nir Spectroscopy ◽  
Optical Characterization ◽  
Optical Absorption Spectroscopy ◽  
Double Stranded Dna

Optical absorption spectroscopy provides evidence for individually dispersed carbon nanotubes. A common method to disperse SWCNTs into aqueous solution is to sonicate the mixture in the presence of a double-stranded DNA (dsDNA). In this paper, optical characterization of dsDNA-wrapped HiPco carbon nanotubes (dsDNA-SWCNT) was carried out using near infrared (NIR) spectroscopy and photoluminescence (PL) experiments. The findings suggest that SWCNT dispersion is very good in the environment of DNA existing. Additionally, its dispersion depends on dsDNA concentration.

Broadband Coherent Anti-Stokes Raman Spectroscopy Characterization of Polymer Thin Films

2006 ◽  
Vol 60 (10) ◽  
pp. 1097-1102 ◽  
Author(s):  
Zachary D. Schultz ◽  
Marc C. Gurau ◽  
Lee J. Richter
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Polymer Thin Films ◽  
Anti Stokes

Optical absorption and structural characterization of reactively sputtered tellurium suboxide thin films

1993 ◽  
Vol 65-66 ◽  
pp. 313-318 ◽  
Author(s):  
M. Di Giulio ◽  
M.C. Nicotra ◽  
M. Re ◽  
R. Rella ◽  
P. Siciliano
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Structural Characterization
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