scholarly journals Characterization of Thermally Evaporated Ag-Ge-S Thin Films

2008 ◽  
Vol 1072 ◽  
Author(s):  
Fei Wang ◽  
William Porter Dunn ◽  
Mukul Jain ◽  
Carter De Leo ◽  
Nicholas Vicker ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Raman Spectroscopy ◽  
Film Thickness ◽  
Raman Line ◽  
Line Shapes ◽  
Thermal Evaporator ◽  
Bulk Glasses ◽  
Deposited Films

ABSTRACTThin films of ternary (GeS3)1−xAgx glasses (x=0.1 and 0.2) are studied in this work. Thin films are fabricated in a vacuum thermal evaporator at 3 different evaporation angles (0°, 30° and 45°). All thin film samples are examined in Raman spectroscopy. Raman results of both normally and obliquely deposited thin film samples reveal Ge-S CS modes (∼340cm−1) , Ge-S ES (∼360cm−1) modes, and thiogermanate modes Q1∼Q3 (390cm−1∼437cm−1). In addition, sharp peaks due to sulfur rings (S8) are observed at 218cm−1 and 470cm−1. Raman line-shapes of thin films are qualitatively consistent with their corresponding bulk glasses. However, the sharp peaks due to sulfur rings were not observed in bulk glasses. By comparing CS modes of thin films of three angles, we observe that normally deposited (0 degree) thin film shows a red-shift in center and a broadening in width. The film thickness of normally deposited films are significantly smaller comparing with that of corresponding obliquely deposited films.

Optical Characterization of C60 Organic Semiconductor and Bilayers

1997 ◽  
Vol 488 ◽  
Author(s):  
J. P. Rainho ◽  
L. Santos ◽  
A. A. Kharlamov
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Optical Absorption ◽  
Film Thickness ◽  
Organic Semiconductor ◽  
Optical Characterization ◽  
Organic Dye ◽  
Zinc Phthalocyanine ◽  
Micro Raman Spectroscopy

AbstractPreparation and characterization either by optical absorption, photoluminescence and micro-Raman spectroscopy of individual components as well as bilayers consisting of organic dye semiconductor Zinc Phthalocyanine (ZnPc) and fullerene, C60, thin films are reported. The layers and structures were deposited in vacuum and some fullerene films were also prepared by casting the C60 solution in benzene. The optical absorption and photoluminescence dependencies on film thickness in bilayers C60/ZnPc were observed and may be discussed in a context of interface induced simmetry reduction of C60 molecules.

RF Magnetron Sputtered Ba0.96Ca0.04Ti0.84Zr0.16O3 Thin Films for High Frequency Applications

2004 ◽  
Vol 833 ◽  
Author(s):  
Ali Mahmud ◽  
T. S. Kalkur ◽  
N. Cramer
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Substrate Temperature ◽  
High Frequency ◽  
Satellite Communications ◽  
Ferroelectric Thin Films ◽  
Paraelectric State ◽  
Deposited Films

ABSTRACTPerovskite ferroelectric thin films in the paraelectric state exhibit outstanding dielectric properties, even at high frequencies (>1 GHz). The tunable dielectric constant of ferroelectric thin films can be used to design frequency and phase agile components. High dielectric constant thin film ferroelectric materials in the paraelectric state have received enormous attention due to their feasibility in applications such as decoupling capacitors and tunable microwave capacitors; the latter application has been fueled by the recent explosion in wireless and satellite communications. This paper reportsBa0.96Ca 0.04Ti0.84Zr0.16O3 (BCTZ) thin films that were deposited on Pt electrodes using radio frequency magnetron sputtering at a low (450 °C) substrate temperature. Sputtered thin film BCTZ at low substrate temperature is compatible with conventional integrated circuit technology. The structural characterization of the deposited films was performed by x-ray diffraction. The electrical characterization of the films was achieved by capacitance-voltage, current-voltage, and S-parameter (via vector network analyzer) measurements. In addition, the effect of post annealing on the deposited films was investigated. A detailed understanding of both their processing and material properties is discussed for successful implementation in high frequency applications.

scholarly journals Further Increasing the Accuracy of Characterization of a Thin Dielectric or Semiconductor Film on a Substrate from Its Interference Transmittance Spectrum

Materials ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4681
Author(s):  
Dorian Minkov ◽  
Emilio Marquez ◽  
George Angelov ◽  
Gavril Gavrilov ◽  
Susana Ruano ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Film Thickness ◽  
High Accuracy ◽  
Transmittance Spectrum ◽  
Semiconductor Film ◽  
Envelope Method ◽  
Average Film Thickness

Three means are investigated for further increasing the accuracy of the characterization of a thin film on a substrate, from the transmittance spectrum T(λ) of the specimen, based on the envelope method. Firstly, it is demonstrated that the accuracy of characterization, of the average film thickness d¯ and the thickness non-uniformity ∆d over the illuminated area, increases, employing a simple dual transformation utilizing the product T(λ)xs(λ), where Tsm(λ) is the smoothed spectrum of T(λ) and xs(λ) is the substrate absorbance. Secondly, an approach is proposed for selecting an interval of wavelengths, so that using envelope points only from this interval provides the most accurate characterization of d¯ and ∆d, as this approach is applicable no matter whether the substrate is transparent or non-transparent. Thirdly, the refractive index n(λ) and the extinction coefficient k(λ) are computed, employing curve fitting by polynomials of the optimized degree of 1/λ, instead of by previously used either polynomial of the optimized degree of λ or a two-term exponential of λ. An algorithm is developed, applying these three means, and implemented, to characterize a-Si and As98Te2 thin films. Record high accuracy within 0.1% is achieved in the computation of d¯ and n(λ) of these films.

Characterization of Rapid Thermal and Micro-Wave Annealed Germanium Thin Films Grown by E-Beam Evaporation on Glass Substrates

2013 ◽  
Vol 663 ◽  
pp. 431-435
Author(s):  
Li Te Tsou ◽  
Sheng Hao Chen ◽  
Huai Yi Chen ◽  
Yao Jen Lee ◽  
Horng Show Koo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Film Thickness ◽  
Sheet Resistance ◽  
Cross Section ◽  
Rapid Thermal Annealing ◽  
Glass Substrates ◽  
Microwave Annealing

In this paper, we used the electron beam (e-beam) evaporation to deposit Ge thin film on glass, and used microwave annealing (MWA) system of 5.8 GHz frequency for thin film crystallization. Then, we compared the MWA experiment results of sample sheet resistance (Rs), crystallization strength and cross section with those using traditional rapid thermal annealing (RTA) equipment. We found that MWA can get poly-Ge thin film with (111), (220) and (311) crystallization directions and optimal Rs at a temperature of about 450 ° C without affecting the film thickness. By comparison, RTA equipment can only reduce the sample Rs at least temperature of 550oC.

The Microstructure and Giant Magnetoresistance of NiFeAg Thin Films

1993 ◽  
Vol 313 ◽  
Author(s):  
Michael A. Parker ◽  
K. R. Coffey ◽  
T. L. Hylton ◽  
J. K. Howard
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Growth ◽  
Giant Magnetoresistance ◽  
Microstructural Characterization ◽  
Structure Property ◽  
Structure Property Relationships ◽  
Deposited Films

ABSTRACTAlthough Much has been published on giant Magnetoresistance (GMR) in co-deposited thin films [1–4], only little [5] has been published on the structure-property relationships limiting the effect. Here, we report the results of microstructural characterization of NiFeAg thin films that exhibit a GMR effect. The as-deposited films show a sizeable GMR effect. The Maximum GMR effect observed was 6.4% with -4k0e FWHM of the 6P/P peak. Upon annealing these films, the GMR at first increases, and then decreases. We present microstructural evidence from TEM and XRD, amongst other techniques, which shows that this is a consequence of the initial NiFeAg thin film agglomerating into NiFe grains in a predominantly Ag segregant Matrix. Upon extended annealing, excessive grain growth leads to a decrease in the GMR as predicted by the model of Berkowitz, et al. [1].

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

scholarly journals Precise control of Jeff=12 magnetic properties in Sr2IrO4 epitaxial thin films by variation of strain and thin film thickness

2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Film Thickness ◽  
Epitaxial Thin Films ◽  
Thin Film Thickness ◽  
Precise Control

Broadband Coherent Anti-Stokes Raman Spectroscopy Characterization of Polymer Thin Films

2006 ◽  
Vol 60 (10) ◽  
pp. 1097-1102 ◽  
Author(s):  
Zachary D. Schultz ◽  
Marc C. Gurau ◽  
Lee J. Richter
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Polymer Thin Films ◽  
Anti Stokes

Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2711-2716 ◽  
Author(s):  
V. Vasilyev ◽  
J. Cetnar ◽  
B. Claflin ◽  
G. Grzybowski ◽  
K. Leedy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pyroelectric Coefficient ◽  
X Ray Diffraction ◽  
Ir Detectors ◽  
Pyroelectric Properties ◽  
X Ray ◽  
Sensing Applications ◽  
Pyroelectric Material ◽  
Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

High Performance Metal Surface Coating Using Ta2O5 Thin Film Prepared by D.C. Magnetron Sputtering

2014 ◽  
Vol 979 ◽  
pp. 240-243
Author(s):  
Narathon Khemasiri ◽  
Chanunthorn Chananonnawathorn ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Pongpan Chindaudom ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Metal Surface ◽  
High Performance ◽  
Grazing Incidence ◽  
Surface Finishing ◽  
Afm Micrographs ◽  
Protective Performance

Tantalum oxide (Ta2O5) thin films were deposited as the protective layers for the metal surface finishing by the DC reactive magnetron sputtering system. The effect of the Ta2O5 film thickness, ranging from 25 nm to 200 nm, on the physical properties and the anti-corrosive performance were investigated. The grazing-incidence X-ray diffraction (GIXRD) and the atomic force microscopy (AFM) were used to examine the crystal structures and the surface topologies of the prepared films, respectively. The XRD results showed that the Ta2O5 thin films were all amorphous. The AFM micrographs demonstrated the film morphology with quite smooth surface features. The surface roughness tended to be rough when the film thickness was increased. To examine the protective performance of the films, the poteniostat and galvanometer was utilized to examine the electrochemical activities with the 1M NaCl as the corrosive electrolyte. The results from the I-V polarization curves (Tafel slope) indicated that, with the Ta2O5 thin film, the current density was significantly reduced by 3 orders of magnitude when compared with the blank sample. Such results were observed because of fully encapsulated surface of the samples were covered with the sputtered Ta2O5 thin films. The study also showed that the Ta2O5 thin film deposited at 50 nm yielded the most extreme protective performance. The Ta2O5 thin films therefore could be optimized for the smallest film thickness for highly potential role in the protective performance of the metal surface finishing products.

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