Light-Induced Metastable Defects in a-Si:H: Towards an Understanding
Keyword(s):
AbstractThe dependence of the creation and the annealing of metastable dangling bonds in hydrogenated amorphous silicon on various material parameters will be discussed in the context of a recently proposed model. After a brief review of the kinetic behaviour governing defect creation and annealing in undoped a- Si:H, a number of special cases will be analyzed: the influence of alloying with O, N, C, and Ge, changes introduced by doping and compensation, and the role of mechanical stress. Finally, possibilities to increase the stability of a-Si:H based devices will be examined.
1994 ◽
Vol 170
(3)
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pp. 278-286
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2002 ◽
Vol 16
(28n29)
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pp. 4246-4249
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1995 ◽
Vol 192-193
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pp. 243-248
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