Abstract. The results of the effect of irradiation with Ar ions
on the structural, electrophysical and optical characteristics of
the ultraviolet Cr/4H-SiC photodetectors in the spectral range
of 200−400 nm are presented. After a single irradiation with
53MeV Ar ions with a fluence of 1 · 1010 cm−2, the quantum
efficiency of the photodetectors practically remained at the level
of the initial samples due to the "gettering effect“ of simple
radiation defects by cluster formations. The observed effect
promoted a decrease in the number of simple radiation defects
of the vacancy type, an increase in the lifetime of current carriers,
and, as a consequence, unchanged values of the photoconductivity
of Cr/4H-SiC photodetectors. After repeated irradiation of the
photodetectors with Ar ions with a total fluence of 2 · 1010 cm−2,
the decay of clusters was observed, the formation of a significant
number of simple defect centers, which led to a decrease in the
lifetime of current carriers and, as a consequence, to a decrease in
photoconductivity of Cr/4H-SiC photodetectors.