Boron Nitride Emitters

1998 ◽  
Vol 509 ◽  
Author(s):  
R. W. Pryor ◽  
Lihua Li ◽  
G. Minina ◽  
H. H. Busta
Keyword(s):  
Boron Nitride ◽  
Electron Emission ◽  
Emission Current ◽  
Cold Cathode ◽  
Carbon Doped ◽  
Cold Cathodes ◽  
Extraction Field

AbstractNew observations are presented on the emission of electrons from n-type boron nitride (BN) cold cathode films. These carbon-doped BN films demonstrate a significant improvement in the electron emission current, on the order of 1 to 3 orders of magnitude, as a function of the extraction field for many different materials and morphologies.These BN cold cathodes have yielded stable DC currents in excess of 4 mA at an extraction field of approximately 30 V/μm.

Electron Emission from Cold Cathodes

1996 ◽  
Vol 449 ◽  
Author(s):  
R. W. Pryor ◽  
Lihua Li ◽  
H. H. Busta
Keyword(s):  
Boron Nitride ◽  
Current Density ◽  
Electron Emission ◽  
Laser Annealing ◽  
Polycrystalline Diamond ◽  
Total Current ◽  
Cold Cathode ◽  
Cold Cathodes ◽  
Planar Film ◽  
Post Synthesis

ABSTRACTNew observations are presented on the emission of electrons from n-type polycrystalline diamond and n-type boron nitride (BN) cold cathode films, both as synthesized and after post-synthesis annealing. The films have been observed to show an increase in electron emission after annealing by one to several orders of magnitude, depending upon the type of emitter and the specific surface treatment. Observations from both plasma and laser annealing treatments will be presented.The annealed BN cold cathodes have been observed to yield stable emission currents as high as 2 A cm−2 (∼4 mA total current) at fields as low as ∼30 V μm−1. This is believed to be the highest reported current density yet observed from a planar film cold cathode emitter.

Carbon‐doped boron nitride cold cathodes

1996 ◽  
Vol 68 (13) ◽  
pp. 1802-1804 ◽  
Author(s):  
R. W. Pryor
Keyword(s):  
Boron Nitride ◽  
Carbon Doped ◽  
Cold Cathodes

scholarly journals Fabrication of Stable Carbon Nanotube Cold Cathode Electron Emitters with Post-Growth Electrical Aging

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 648 ◽  
Author(s):  
Jung Hyun Kim ◽  
Jung Su Kang ◽  
Kyu Chang Park
Keyword(s):  
Carbon Nanotube ◽  
Electron Emission ◽  
Emission Current ◽  
Cold Cathode ◽  
Time Stability ◽  
Field Emitters ◽  
Initial Stage ◽  
Electrical Aging ◽  
Long Time ◽  
Electron Emitters

We fabricated carbon nanotube (CNT) cold cathode emitters with enhanced and stable electron emission properties and long-time stability with electrical aging as a post-treatment. Our CNT field emitters showed improved electrical properties by electrical aging. We set the applied bias for effective electrical aging, with the bias voltage defined at the voltage where Joule heating appeared. At the initial stage of aging, the electron emission current started to increase and then was saturated within 3 h. We understood that 5 h aging time was enough at proper aging bias. If the aging bias is higher, excessive heating damages CNT emitters. With the electrical aging, we obtained improved electron emission current from 3 mA to 6 mA. The current of 6 mA was steadily driven for 9 h.

A Fabrication of the High Emitter-Isolating-Layer for Printed Cold Cathode in Field Emission Display Panel

2012 ◽  
Vol 459 ◽  
pp. 567-570
Author(s):  
Xiao Quan Li
Keyword(s):  
Carbon Nanotube ◽  
Field Emission ◽  
Electron Emission ◽  
Emission Current ◽  
Field Emission Property ◽  
Cold Cathode ◽  
Field Emission Display ◽  
Field Emitters ◽  
Cathode Electrode ◽  
Insulation Performance

Using black insulation slurry as manufacture material, the high emitter-isolating-layer was fabricated on the cathode plate. The high emitter-isolating-layer which possessed good insulation performance was composed of many parallel emitter-isolation-stripes, which the bottom cathode electrode would be exposed in the center of the emitter-isolation-stripe. The carbon nanotube paste was prepared onto the cathode plate to form the field emitters. And the field emission display panel with high emitter-isolating-layer was demonstrated, which the better field emission property including the large emission current and stable electron emission was confirmed.

Characteristics of Surface-Emitting Cold Cathode Based on Porous Polysilicon

1998 ◽  
Vol 509 ◽  
Author(s):  
Takuya Komoda ◽  
Xia Sheng ◽  
Nobuyoshi Koshida
Keyword(s):  
Silicon Wafer ◽  
Electron Emission ◽  
Negative Electrode ◽  
Emission Current ◽  
Cold Cathode ◽  
Hot Electron ◽  
Au Film ◽  
Polysilicon Layer ◽  
A Current ◽  
Tungsten Lamp

AbstractIt is demonstrated that porous polysilicon (PPS) diode fabricated on the silicon substrate operates as efficient and stable surface-emitting cold cathode. A 1.5 pm of non-doped polysilicon layer is formed on n-type (100) silicon wafer and anodised in a solution of HF(50%): ethanol = 1:1 at a current density of 10 mA/cm2 for 30 seconds under illumination by a 500W tungsten lamp from a distance of 20 cm. Subsequently, PPS layer is oxidized in a rapid thermal oxidation(RTO) furnace for one hour at a temperature of 700°C. A semi-transparent thin Au film (about 10 nm thick) is deposited onto the PPS layer as a positive electrode and an ohmic contact is formed at the back of the silicon wafer as a negative electrode. When a positive bias is applied to the Au electrode in vacuum, the diode uniformly emits electrons. No electron emission is observed in the negatively biased region. Emission current is about 10−4 A/cm2 at 20V bias, and no fluctuation of emission current is observed as a function of time. Emission current is not affected by a surrounding pressure up to around 10 Pa. It is envisaged that mechanism of this emission is attributed to hot electron tunnelling.

Polycrystalline Diamond, Boron Nitride and Carbon Nitride Thin Film Cold Cathodes

1995 ◽  
Vol 416 ◽  
Author(s):  
R. W. Pryor
Keyword(s):  
Boron Nitride ◽  
Applied Field ◽  
Carbon Nitride ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Cold Cathode ◽  
Negative Electron Affinity ◽  
Cold Cathodes ◽  
Field Response ◽  
Current Densities

ABSTRACTRecent observations are presented on the emission of electrons from n-type polycrystalline diamond and from two new families of nitride-based cold cathode films, n-type boron nitride (BN) and n-type carbon nitride (CN). The n-type polycrystalline diamond films were synthesized by MPECVD. The BN and CN n-type films (∼150 nm) were synthesized by reactive laser ablation on n-type polycrystalline diamond (∼24 μm) on (100)Si.Emission current densities have been measured as high as 119 ma cm−2. Extraction fields have been observed to range from ∼0 V μm−1 up. The diamond films show a field activated thermionic behavior. Both the BN and the CN films show a power-law current density / applied field response implying a negative electron affinity (NEA) type behavior.

Effect of space charge on vacuum pre-breakdown voltage and electron emission current

2021 ◽  
Vol 129 (15) ◽  
pp. 155102
Author(s):  
B. Seznec ◽  
Ph. Dessante ◽  
Ph. Teste ◽  
T. Minea
Keyword(s):  
Space Charge ◽  
Breakdown Voltage ◽  
Electron Emission ◽  
Emission Current

Two-dimensional analysis of hot-electron emission current in MOS FET

1982 ◽  
Vol 65 (2) ◽  
pp. 116-124
Author(s):  
Takahashi Morimoto ◽  
Susumu Muramoto
Keyword(s):  
Dimensional Analysis ◽  
Electron Emission ◽  
Emission Current ◽  
Two Dimensional ◽  
Hot Electron

Molecular dynamics study on the crack propagation in carbon doped polycrystalline boron-nitride nanosheets

2022 ◽  
Vol 203 ◽  
pp. 111066
Author(s):  
Amir Namazian Jam ◽  
Negin Namazian Jam ◽  
Mohammadreza Izadifar ◽  
Timon Rabczuk
Keyword(s):  
Molecular Dynamics ◽  
Boron Nitride ◽  
Crack Propagation ◽  
Carbon Doped ◽  
Boron Nitride Nanosheets
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