5.5 kV Bipolar Diodes From High Quality CVD 411-SiC

1998 ◽  
Vol 512 ◽  
Author(s):  
K. G. Irvine ◽  
R. Singh ◽  
M. J. Paisley ◽  
J. W. Palmour ◽  
O. Kordina ◽  
...  
Keyword(s):  
Thick Film ◽  
High Power ◽  
Growth Process ◽  
Carrier Lifetime ◽  
Voltage Drop ◽  
Power Devices ◽  
High Quality ◽  
Thickness Uniformity ◽  
Blocking Voltage ◽  
Reverse Blocking

ABSTRACTThick, high quality 4H-SiC material suitable for high power devices has been grown in a hot-wall reactor. Recent improvements to the growth process have improved our thickness uniformity over a 50mm wafer to less than 1% and the doping uniformity to less than 5%, both values expressed as σ/mean.A record breaking reverse blocking voltage of 5.5 kV was obtained on P-i-N diodes fabricated from a 85μm thick film. The on-state voltage drop was 5.4 V at 100 A/cm2. From this on-state voltage drop, the carrier lifetime was estimated in excess of 1μs.

scholarly journals Wide-Range Prediction of Ultra-High Voltage SiC IGBT Static Performance Using Calibrated TCAD Model

2020 ◽  
Vol 1004 ◽  
pp. 911-916 ◽  
Author(s):  
Daniel Johannesson ◽  
Keijo Jacobs ◽  
Staffan Norrga ◽  
Anders Hallén ◽  
Muhammad Nawaz ◽  
...  
Keyword(s):  
High Voltage ◽  
High Power ◽  
Voltage Drop ◽  
Forward Voltage ◽  
Blocking Voltage ◽  
Wide Range ◽  
Forward Voltage Drop ◽  
Static Performance ◽  
Simulation Results ◽  
Ultra High Voltage

In this paper, a technology computer-aided design (TCAD) model of a silicon carbide (SiC) insulated-gate bipolar transistor (IGBT) has been calibrated against previously reported experimental data. The calibrated TCAD model has been used to predict the static performance of theoretical SiC IGBTs with ultra-high blocking voltage capabilities in the range of 20-50 kV. The simulation results of transfer characteristics, IC-VGE, forward characteristics, IC-VCE, and blocking voltage characteristics are studied. The threshold voltage is approximately 5 V, and the forward voltage drop is ranging from VF = 4.2-10.0 V at IC = 20 A, using a charge carrier lifetime of τA = 20 μs. Furthermore, the forward voltage drop impact for different process dependent parameters (i.e., carrier lifetimes, mobility/scattering and trap related defects) and junction temperature are investigated in a parametric sensitivity analysis. The wide-range simulation results may be used as an input to facilitate high power converter design and evaluation. In this case, the TCAD simulated static characteristics of SiC IGBTs is compared to silicon (Si) IGBTs in a modular multilevel converter in a general high-power application. The results indicate several benefits and lower conduction energy losses using ultra-high voltage SiC IGBTs compared to Si IGBTs.

5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application

2008 ◽  
Vol 600-603 ◽  
pp. 947-950 ◽  
Author(s):  
Jun Hu ◽  
Larry X. Li ◽  
Petre Alexandrov ◽  
Xiao Hui Wang ◽  
Jian Hui Zhao
Keyword(s):  
Energy Loss ◽  
High Power ◽  
Voltage Drop ◽  
Guard Ring ◽  
Power Switching ◽  
Edge Termination ◽  
Forward Current ◽  
Blocking Voltage ◽  
Bus Voltage ◽  
Ac Induction Motor

4H-SiC Junction Barrier Diodes (JBS) diodes were designed, fabricated and tested. The JBS diodes based on a 45μm thick, 1.4×1015cm-3 doped drift layer with multiple non-uniform spacing guard ring edge termination showed a blocking voltage of over 5kV. The 5kV JBS diode has a forward current density of 108A/cm2 at 3.5V and a specific on resistance (RSP_ON) of 25.2mW·cm2, which is very close to the theoretical RSP_ON of 23.3mΩ·cm2. DC I-V measurement of packaged JBS diodes showed a forward current of 100A at a voltage drop of 4.3V. A half-bridge inverter with a bus voltage up to 2.5kV was used to characterize the high power switching performance of SiC JBS diodes. A large inductance load of 1mH was used to simulate the load of a high power AC induction motor. Compared to a Si PIN diode module, the SiC JBS package reduces diode turn-off energy loss by 30% and Si IGBT turn-on energy loss by 21% at room temperature.

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

2014 ◽  
Vol 778-780 ◽  
pp. 135-138 ◽  
Author(s):  
Tetsuya Miyazawa ◽  
Shi Yang Ji ◽  
Kazutoshi Kojima ◽  
Yuuki Ishida ◽  
Koji Nakayama ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
High Voltage ◽  
Growth Process ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Voltage Drop ◽  
Minority Carrier Lifetime ◽  
Forward Voltage ◽  
Forward Voltage Drop ◽  
Very High

The epitaxial growth of thick multi-layer 4H-SiC to fabricate very high-voltage C-face n-channel IGBTs is demonstrated using 3-inch diameter wafers. We employ an inverted-growth process, which enables the on-state voltage of resultant IGBTs to be reduced. Furthermore a long minority carrier lifetime (> 10 μs) and a low-resistance p+epilayer can reduce the forward voltage drop of the IGBTs. The small forward voltage drop is demonstrated particularly at high temperatures by fabricating and characterizing simple pin diodes using the epi-wafer.

Thick Epilayer for Power Devices

2007 ◽  
Vol 556-557 ◽  
pp. 47-52 ◽  
Author(s):  
Anne Henry ◽  
Jawad ul Hassan ◽  
Henrik Pedersen ◽  
Franziska Christine Beyer ◽  
Peder Bergman ◽  
...  
Keyword(s):  
Optical Microscopy ◽  
High Voltage ◽  
High Power ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Thick Layer ◽  
Minority Carrier Lifetime ◽  
Growth Conditions ◽  
Power Devices ◽  
Substrate Quality

Growth of thick epitaxial SiC layers needed for high power devices is presented for horizontal hot-wall CVD (HWCVD) reactors. We demonstrate thickness of epilayer of 100 μm and more with good morphology, low-doping with no doping variation through the whole thick layer and reasonable carrier lifetime which mainly depends on the substrate quality. Typical epidefects are described and their density can dramatically be reduced when choosing correctly the growth conditions as well as the polishing of the surface prior to the growth. The control of the doping and thickness uniformities as well as the run-to-run reproducibility is also presented. Various characterization techniques such as optical microscopy, AFM, reflectance, CV, PL and minority carrier lifetime have been used. Results of high-voltage SiC Schottky power devices are presented.

scholarly journals Optimization of Schottky-contact process on 4H-SiC Junction Barrier Schottky (JBS) Diodes

2021 ◽  
Vol 2083 (2) ◽  
pp. 022090
Author(s):  
Qingling Li ◽  
Tao Zhu ◽  
Jialing Li ◽  
Hailiang Yan
Keyword(s):  
Schottky Barrier ◽  
Voltage Drop ◽  
Negative Impact ◽  
Contact Process ◽  
Schottky Contact ◽  
Curve Tracer ◽  
Blocking Voltage ◽  
Schottky Barrier Junction ◽  
Reverse Blocking ◽  
Schottky Rectifier

Abstract SiC Junction Barrier Schottky (JBS) Rectifier is a kind of unipolar power diode with low threshold voltage and high reverse blocking voltage. And the Schottky barrier Φ BN is a main technology parameter, which could greatly affect the forward conduction power and reverse leakage current in the JBS rectifiers. Therefore, it is necessary to balance the influence of Φ BN on the electrical characteristics of JBS rectifiers. In this paper, physical properties at the metal-semiconductor at the Schottky-contact could be optimized by the improvement of Schottky-contact process. And this optimization could significantly decrease Φ BN to reduce the on-state voltage drop V F and minimize negative impact on its reverse characteristics. After the completion of Silicon carbide JBS diodes, the static parameter electrical test was carried out on the wafer by using Keysight B1505A Power Device Analyzer/Curve Tracer. The test results show that the Schottky barrier height Φ BN of JBS Schottky rectifier manufactured by the modified Schottky foundation technology decreased from 1.19eV to 0.99eV and I R increased from 1.08μA to 3.73μA (reverse blocking voltage V R=1200V). It indicated that the power consumption of Schottky barrier junction in JBS rectifiers could be significantly reduced by about 25%, and I R could effectively be limited to less than 10μA.

scholarly journals Hybrid Voltage Regulator for Automobiles

1981 ◽  
Vol 8 (3-4) ◽  
pp. 229-233
Author(s):  
Akihiro Sawamura ◽  
Tadashi Takahashi ◽  
Sei-Ichi Denda
Keyword(s):  
Thick Film ◽  
Temperature Cycling ◽  
Voltage Regulators ◽  
Voltage Regulator ◽  
Reverse Voltage ◽  
Pattern Design ◽  
Blocking Voltage ◽  
Reverse Blocking ◽  
Automobile Use ◽  
Surge Current

In the course of the development of hybrid voltage regulators for automobile use, increasing the reverse blocking voltage with decreasing of saturation voltage for output power darlington transistors, the capability of monolithic IC chip against surge pulses generated in cars, and an improvement of the pattern design of thick film in order to withstand temperature cycling, have been important subjects. Power darlingtons have more than 150 V of reverse voltage as well as large secondary breakdown capacity and less than 1.2 V of saturation voltage. A monolithic chip having small saturation voltage and more than 500 mA of surge current capability, has been developed. A neck-shaped thick film pattern was developed to make soldering in a controlled manner. The problems in the earlier stage with surge current and temperature cycling have been almost solved by these improvements.In this paper the characteristics of the transistor and the monolithic chip the structure of the device and related problems observed in temperature cycling are described.

Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices

2007 ◽  
Vol 556-557 ◽  
pp. 141-144 ◽  
Author(s):  
L.B. Rowland ◽  
Greg Dunne ◽  
Jody Fronheiser ◽  
Stanislav I. Soloviev
Keyword(s):  
Vapor Phase ◽  
High Power ◽  
Minority Carrier ◽  
Vapor Phase Epitaxy ◽  
Cold Wall ◽  
Power Devices ◽  
Carrier Diffusion ◽  
Thickness Uniformity

Cold-wall vapor phase epitaxy was utilized to grow uniform 4H-SiC layers with abrupt doping interfaces on 4o off-axis substrates. Concentrations of Al were reduced roughly 200x after 0.1 μm of epitaxy after trimethylaluminum flow was stopped. Thickness uniformity of cold-wall epitaxy across 3” wafers was as good as 3.2%. Minority carrier diffusion lengths of 27 μm-thick 4H-SiC epitaxy grown in a cold-wall design were as high as 58 μm.

Sign in / Sign up

Export Citation Format

Share Document