Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT
2014 ◽
Vol 778-780
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pp. 135-138
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Keyword(s):
The epitaxial growth of thick multi-layer 4H-SiC to fabricate very high-voltage C-face n-channel IGBTs is demonstrated using 3-inch diameter wafers. We employ an inverted-growth process, which enables the on-state voltage of resultant IGBTs to be reduced. Furthermore a long minority carrier lifetime (> 10 μs) and a low-resistance p+epilayer can reduce the forward voltage drop of the IGBTs. The small forward voltage drop is demonstrated particularly at high temperatures by fabricating and characterizing simple pin diodes using the epi-wafer.
2020 ◽
Vol 1004
◽
pp. 911-916
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Keyword(s):
2014 ◽
Vol 778-780
◽
pp. 855-858
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Keyword(s):
2014 ◽
Vol 778-780
◽
pp. 1038-1041
◽
2018 ◽
Vol 924
◽
pp. 568-572
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Keyword(s):
2015 ◽
Vol 54
(12)
◽
pp. 121301
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Keyword(s):
1995 ◽
Vol 42
(6)
◽
pp. 1174-1179
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Keyword(s):