In-Situ Regrowthi of GaAs Through Controlled Phase Transformations and Reactions of Thin Films on GaAs

1998 ◽  
Vol 514 ◽  
Author(s):  
D. A. Caldwell ◽  
L.-C. Chen ◽  
A. H. Bensaoula ◽  
J. K. Farrer ◽  
C. B. Carter ◽  
...  

ABSTRACTIn-situ depositions and reactions are utilized in the study of phase formation from solid phase reactions. We report on the formation of epitaxial GaAs and the formation of NiAs or Ni2Ga3 by the exposure of Ni3GaAs to As4 or Ga fluxes. In-situ annealing of Ni on MBE-grown GaAs leads to Ni3GaAs, and subsequent reaction with As4 or Ga drives regrowth of GaAs. The structures were analyzed by RBS, XRD, TEM, and in-situ electrical measurements.

2018 ◽  
Vol 60 (7) ◽  
pp. 1397
Author(s):  
Р.Р. Алтунин ◽  
Е.Т. Моисеенко ◽  
С.М. Жарков

AbstractA sequence of phases forming during the solid-phase reaction in Al/Pt bilayer thin films has been investigated by in situ electron diffraction. It is shown that the amorphous PtAl_2 phase forms first during the solid-phase reaction initiated by heating. Upon further heating, PtAl_2, Pt_2Al_3, PtAl, and Pt_3Al crystalline phases sequentially form, which is qualitatively consistent with an effective formation heat model. The content of phases forming during the reaction has been quantitatively analyzed and the structural phase transformations have been examined.


Author(s):  
K. Barmak

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.


2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  

2004 ◽  
Vol 461 (1) ◽  
pp. 81-85 ◽  
Author(s):  
C.H Yu ◽  
Y.L Chueh ◽  
S.W Lee ◽  
S.L Cheng ◽  
L.J Chen ◽  
...  

2013 ◽  
Vol 541 ◽  
pp. 21-27 ◽  
Author(s):  
Magali Putero ◽  
Benjamin Duployer ◽  
Ivan Blum ◽  
Toufik Ouled-Khachroum ◽  
Marie-Vanessa Coulet ◽  
...  

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