Solid-Phase Reactions in Al Alloy/TiN/Ti/Si Systems Observed by In-Situ Cross-Sectional TEM

1994 ◽  
Author(s):  
S. Sobue ◽  
S. Mukainakano ◽  
Y. Ueno ◽  
T. Hattori
Keyword(s):  
Solid Phase ◽  
Al Alloy ◽  
Cross Sectional ◽  
Solid Phase Reactions

Solid-Phase Reactions in Al Alloy/TiN/Ti/Si Systems Observed by In Situ Cross-Sectional TEM

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 987-991 ◽  
Author(s):  
Susumu Sobue ◽  
Shinichi Mukainakano ◽  
Yoshiki Ueno ◽  
Tadashi Hattori
Keyword(s):  
Solid Phase ◽  
Al Alloy ◽  
Cross Sectional ◽  
Solid Phase Reactions

scholarly journals Effect of Non-Hydrostatic Stress on Kinetics and Interfacial Roughness During Solid Phase Epitaxial Growth in Si

1996 ◽  
Vol 441 ◽  
Author(s):  
William Barvosa-Carter ◽  
Michael J. Aziz
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Uniaxial Compression ◽  
Solid Phase ◽  
Hydrostatic Stress ◽  
Uniaxial Stress ◽  
Cross Sectional ◽  
Time Resolved ◽  
Crystal Interface

AbstractWe report preliminary in-situ time-resolved measurements of the effect of uniaxial stress on solid phase epitaxial growth in pure Si (001) for the case of stress applied parallel to the amorphous-crystal interface. The growth rate is reduced by the application of uniaxial compression, in agreement with previous results. Additionally, the velocity continues to decrease with time. This is consistent with interfacial roughening during growth under stress, and is supported by both reflectivity measurements and cross-sectional TEM observations. We present a new kinetically-driven interfacial roughening mechanism which is consistent with our observations.

A Study of Substrate Orientation Dependence of the Solid-Phase Epitaxial Growth of Amorphised GaAs

1998 ◽  
Vol 523 ◽  
Author(s):  
K. B. Belay ◽  
D. J. Llewellyn ◽  
M. C. Ridgway
Keyword(s):  
Epitaxial Growth ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Liquid Nitrogen Temperature ◽  
Amorphous Layer ◽  
Orientation Dependence ◽  
Ex Situ ◽  
Cross Sectional ◽  
Substrate Orientation

AbstractIn-situ transmission electron microscopy (TEM) has been utilized in conjunction with conventional ex-situ Rutherford backscattering spectrometry and channeling (RBS/C), in-situ time resolved reflectivity (TRR) and ex-situ TEM to study the influence of substrate orientation on the solid-phase epitaxial growth (SPEG) of amorphised GaAs. A thin amorphous layer was produced on semi-insulating (100), (110) and (111) GaAs substrates by ion implantation of 190 and 200 keV Ga and As ions, respectively, to a total dose of 1e14/cm2. During implantation, substrates were maintained at liquid nitrogen temperature. In-situ annealing at ∼260°C was performed in the electron microscope and the data obtained was quantitatively analysed. It has been demonstrated that the non-planarity of the crystalline-amorphous (c/a)-interface was greatest for the (111) substrate orientation and least for the (110) substrate orientation. The roughness was measured in terms of the length of the a/c-interface in given window as a function of depth on a frame captured from the recorded video of the in-situ TEM experiments. The roughness of the c/a-interface was determined by the size of the angle subtended by the microtwins with respect to the interface on ex-situ TEM cross-sectional micrographs. The angle was both calculated and measured and was the largest in the case of (111) plane. The twinned fraction as a function of orientation, was calculated in terms of the disorder measured from the RBS/C and it was greatest for the (111) orientation.

In-Situ Regrowthi of GaAs Through Controlled Phase Transformations and Reactions of Thin Films on GaAs

1998 ◽  
Vol 514 ◽  
Author(s):  
D. A. Caldwell ◽  
L.-C. Chen ◽  
A. H. Bensaoula ◽  
J. K. Farrer ◽  
C. B. Carter ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transformations ◽  
Phase Formation ◽  
Solid Phase ◽  
Electrical Measurements ◽  
Subsequent Reaction ◽  
Epitaxial Gaas ◽  
Solid Phase Reactions

ABSTRACTIn-situ depositions and reactions are utilized in the study of phase formation from solid phase reactions. We report on the formation of epitaxial GaAs and the formation of NiAs or Ni2Ga3 by the exposure of Ni3GaAs to As4 or Ga fluxes. In-situ annealing of Ni on MBE-grown GaAs leads to Ni3GaAs, and subsequent reaction with As4 or Ga drives regrowth of GaAs. The structures were analyzed by RBS, XRD, TEM, and in-situ electrical measurements.

FORMATION OF SILICON NANOCRYSTALS AND INTERFACE ISLANDS IN SYNCHROTRON-RADIATION-IRRADIATED SiO2 FILMS ON Si(100)

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3749-3752 ◽  
Author(s):  
H. AKAZAWA
Keyword(s):  
Vacuum Ultraviolet ◽  
Solid Phase ◽  
Average Diameter ◽  
High Energy ◽  
Cross Sectional ◽  
Reflectivity Measurement ◽  
Transmission Electron ◽  
Atomically Flat ◽  
Nanocrystalline Si

Nucleation of nanocrystalline Si (nc-Si) in SiO 2 films irradiated with vacuum ultraviolet and soft x-ray radiation has been investigated by using in-situ spectroscopic ellipsometry, cross-sectional transmission electron microscopy, reflectivity measurement, and reflection high-energy electron diffraction. The formation of nc-Si proceeds in the repetition of two steps: (i) conversion of SiO 2 to SiO x through the creation of Frenkel pairs and the subsequent desorption of O 2, and (ii) separation of SiO x into Si and SiO 2 domains. The average diameter of nc-Si increases from 2 to 10 nm as the irradiation temperature increases from 470°C to 610°C. Above 700°C, oxide domains are gone and solid-phase recrystallization produces Si islands terminated by the Si(100) substrate interface. At temperatures higher than 800°C, these islands collapse and an atomically flat Si(100) interface appears.

Kinetics and Microstructure of Transiently Annealed Implanted Polycrystalline Silicon Layers

1989 ◽  
Vol 157 ◽  
Author(s):  
J.M.C. England ◽  
P.J. Timans ◽  
R.A. Mcmahon ◽  
H. Ahmed ◽  
C. Hill ◽  
...  
Keyword(s):  
Grain Size ◽  
Polycrystalline Silicon ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Interface Roughness ◽  
Cross Sectional ◽  
Time Resolved ◽  
Microstructural Changes ◽  
Transmission Electron

ABSTRACTMicrostructural changes occurring during the early stages of rapid thermal annealing of polycrystalline silicon bipolar emitters crucially affect the final dopant distribution and hence the performance of these devices. The first stage of annealing is epitaxial regrowth in the solid phase of the layer amorphised by the implantation. In-situ studies using time-resolved reflectivity measurements, combined with cross-sectional transmission electron microscopy of partly annealed structures, have determined the effects of initial grain size, annealing temperature and amorphising species (Si or As) on the rate of regrowth and the microstructural changes which occur during annealing. As the grain size is reduced, the regrowth rate decreases and the interface roughness increases. Arsenic implantation alters the rate of regrowth in such a manner as to produce a smoother interface than that in silicon implanted material.

Effets of surfaces on precipitate morphology in irradiated thin foils

1978 ◽  
Vol 36 (1) ◽  
pp. 654-655
Author(s):  
D.I. Potter ◽  
A. Taylor
Keyword(s):  
Ion Irradiation ◽  
Dark Field Image ◽  
Thin Foil ◽  
Dark Field ◽  
Al Alloy ◽  
Bright Field Image ◽  
Dislocation Loops ◽  
Precipitate Morphology ◽  
Thin Foils

Thermal aging of Ni-12.8 at. % A1 and Ni-12.7 at. % Si produces spatially homogeneous dispersions of cuboidal γ'-Ni3Al or Ni3Si precipitate particles arrayed in the Ni solid solution. We have used 3.5-MeV 58Ni+ ion irradiation to examine the effect of irradiation during precipitation on precipitate morphology and distribution. The nearness of free surfaces produced unusual morphologies in foils thinned prior to irradiation. These thin-foil effects will be important during in-situ investigations of precipitation in the HVEM. The thin foil results can be interpreted in terms of observations from bulk irradiations which are described first.Figure 1a is a dark field image of the γ' precipitate 5000 Å beneath the surface(∿1200 Å short of peak damage) of the Ni-Al alloy irradiated in bulk form. The inhomogeneous spatial distribution of γ' results from the presence of voids and dislocation loops which can be seen in the bright field image of the same area, Fig. 1b.

Dynamic studies of silicide-mediated crystallization of amorphous silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1352-1353
Author(s):  
C. Hayzelden ◽  
J. L. Batstone
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Metallic Phase ◽  
Single Crystal Substrate ◽  
Free Electrons ◽  
Melt Temperature ◽  
Transmission Electron ◽  
Crystal Substrate ◽  
High Resolution Tem

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

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