The Effects of Small Concentrations of Oxygen in RTP Annealing of Low Energy Boron, BF2 and Arsenic Ion Implants

1998 ◽  
Vol 525 ◽  
Author(s):  
Daniel F. Downey ◽  
Judy W. Chow ◽  
Wilfried Lerch ◽  
Juergen Niess ◽  
Steven D. Marcus
Keyword(s):  
Scanning Force Microscopy ◽  
Low Energy ◽  
Junction Depth ◽  
Force Microscopy ◽  
Enhanced Diffusion ◽  
Low Concentrations ◽  
Shallow Junctions ◽  
Scanning Force ◽  
Dopant Loss ◽  
Anneal Temperature

ABSTRACTIon implants of 1.0 keV 11B+, 5 keV BF 2+, and 2.0 keV As+ at a dose of IeI5/cm2 were rapid thermal annealed (RTA) in a STEAG AST-2800µ with varying percents of oxygen in N2, ranging from 0-lppm to 50,000 ppm to investigate the effects of low concentrations of oxygen during anneal. Sheet resistance (Rs), ellipsometry, SIMS, Tapered Groove Profilometry (TGP), and Scanning Force Microscopy (SFM) were employed to characterize these layers. For each of these implant cases, an optimal RTA condition is established which maximizes retained dose while still producing shallow junctions. As a function of O2 content, anneal temperature and implant condition, three regimes are observed that affect after anneal retained dose. These regimes are: dopant loss to the ambient resulting from etching of Si, dopant loss by out-diffusion from evaporation/chemical reactions, a capping regime that minimizes out-diffusion. In this later regime the dopant loss results from consumption into the RTA grown oxide. In addition, this paper also discusses oxidation enhanced diffusion (OED) and identifies its extent as a function of temperature and O2 content of the anneal for the three implant conditions investigated. For example, a 1.0 keV 11B+wafer annealed at 1050°C lOs in a controlled 33 ppm of O2 in N2 yields a SIMS junction depth 320 Å shallower than previously reported by others.

Rapid Thermal Process Requirements for The Annealing of Ultra-Shallow Junctions

1997 ◽  
Vol 470 ◽  
Author(s):  
Daniel F. Downey ◽  
Sonu L. Daryanani ◽  
Marylou Meloni ◽  
Kristen M. Brown ◽  
Susan B. Felch ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Diffusion Mechanism ◽  
Complex Surface ◽  
Junction Depth ◽  
Enhanced Diffusion ◽  
Shallow Junctions ◽  
Diffusion Mechanisms ◽  
Ultra Shallow Junctions ◽  
Dopant Loss ◽  
Loss Mechanisms

ABSTRACT2. 0 keV 11B+, 2.2 keV 49BF2+ ion implanted and 1.0 kV Plasma Doped (PLAD) wafers of a dose of 1E15/cm2 were annealed at various times and temperatures in a variety of ambiente: 600 to 50,000 ppm O2 in N2; 5% NH3 in N2; N2O; N2 or Ar, in order to investigate the effects of the annealing ambient on the formation of ultra-shallow junctions. RGA data was collected during some (if the anneals to assist in identifying the complex surface chemistry responsible for boron out-diffusion. Subsequent to the anneals, ellipsometric, XPS, four-point probe sheet resistance and SJJVIS measurements were performed to further elucidate the effects of the different ambients on the r etained boron dose, the sheet resistance value, the RTP grown oxide layer and the junction depth. In the cases where oxygen was present, e.g. N2O and O2 in N2, an oxidation enhanced diffusion of the boron was observed. This was most dramatic for the N2O anneals, which at 1050°C 10s diffused the boron an additional 283 to 427 Å, depending on the particular doping condition and species. For the case of BF2 implants and PLAD, anneals in 5% NH3 in N2 reduced the junction depth by a nitridation reduced diffusion mechanism. RGA data indicated that the out-diffusion mechanisms for B and BF2 implanted wafers are different, with the BF2 exhibiting dopant loss mechanisms during the 950°C anneals, producing F containing compounds. B implants did not show doping loss mechanisms, ais observed by the RGA, until the 1050°C anneals and these signals did not contain F containing compounds. Equivalent effective energy boron implants of 8.9 keV BF2 vs. 2.0 keV B, however, indicated that the overall effect of the F in the BF2 implants is very beneficial in the creation of ultra-shallow junctions (compared to B implants): reducing the junction depth by 428 Å, and increasing the electrical activation (determined by SRP) by 11.7%, even though the retained dose (resulting from an increased out-diffusion of B), was decreased by 5.4%.

Dot Pattern Formation on Silicon Surfaces by Low-Energy Ion Beam Erosion

2004 ◽  
Vol 849 ◽  
Author(s):  
B. Ziberi ◽  
F. Frost ◽  
T. Höche ◽  
B. Rauschenbach
Keyword(s):  
Ion Beam ◽  
Experimental Studies ◽  
Scanning Force Microscopy ◽  
Low Energy ◽  
Silicon Surfaces ◽  
Force Microscopy ◽  
Sample Rotation ◽  
Mean Size ◽  
Scanning Force ◽  
High Degree

ABSTRACTExperimental studies of low-energy (≤ 2000 eV) Ar+ ion beam erosion of Si surfaces under normal and oblique ion incidence with simultaneous sample rotation at room temperature show a variety of topographies. At oblique ion incidence, between 70° and 80° with respect to surface normal, dot patterns evolve (dot size ∼ 30 nm) with a remarkably high degree of ordering comparable to dot nanostructures reported for different III/V compound semiconductors. The mean size and ordering of these nanostructures can be adjusted by various process parameters like ion beam energy and erosion time, respectively. Scanning force microscopy (AFM) has been used to characterize the evolution of the surface topography.

Scanned tip measurement of deep vertical facets on a flat surface: Measuring roughness on gaas laser waveguide mirrors

1993 ◽  
Vol 51 ◽  
pp. 532-533
Author(s):  
Chang Shen ◽  
Phil Fraundorf ◽  
Robert W. Harrick
Keyword(s):  
Integrated Circuits ◽  
Flat Surface ◽  
Scanning Force Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Optoelectronic Integrated Circuits ◽  
Laser Waveguide ◽  
Scanning Force ◽  
Gaas Laser

Monolithic integration of optoelectronic integrated circuits (OEIC) requires high quantity etched laser facets which prevent the developing of more-highly-integrated OEIC's. The causes of facet roughness are not well understood, and improvement of facet quality is hampered by the difficulty in measuring the surface roughness. There are several approaches to examining facet roughness qualitatively, such as scanning force microscopy (SFM), scanning tunneling microscopy (STM) and scanning electron microscopy (SEM). The challenge here is to allow more straightforward monitoring of deep vertical etched facets, without the need to cleave out test samples. In this presentation, we show air based STM and SFM images of vertical dry-etched laser facets, and discuss the image acquisition and roughness measurement processes. Our technique does not require precision cleaving. We use a traditional tip instead of the T shape tip used elsewhere to preventing “shower curtain” profiling of the sidewall. We tilt the sample about 30 to 50 degrees to avoid the curtain effect.

Log-log scale roughness spectroscopy of surfaces

1993 ◽  
Vol 51 ◽  
pp. 224-225
Author(s):  
P. Fraundorf ◽  
B. Armbruster
Keyword(s):  
Power Spectrum ◽  
Autocorrelation Function ◽  
Power Spectra ◽  
Scanning Force Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Scanning Force ◽  
Lateral Structure ◽  
Scale Roughness

Optical interferometry, confocal light microscopy, stereopair scanning electron microscopy, scanning tunneling microscopy, and scanning force microscopy, can produce topographic images of surfaces on size scales reaching from centimeters to Angstroms. Second moment (height variance) statistics of surface topography can be very helpful in quantifying “visually suggested” differences from one surface to the next. The two most common methods for displaying this information are the Fourier power spectrum and its direct space transform, the autocorrelation function or interferogram. Unfortunately, for a surface exhibiting lateral structure over several orders of magnitude in size, both the power spectrum and the autocorrelation function will find most of the information they contain pressed into the plot’s origin. This suggests that we plot power in units of LOG(frequency)≡-LOG(period), but rather than add this logarithmic constraint as another element of abstraction to the analysis of power spectra, we further recommend a shift in paradigm.

Anisotropy of Nanoindentation – a tool for the determination of nanocrystal orientation ?

2003 ◽  
Vol 779 ◽  
Author(s):  
David Christopher ◽  
Steven Kenny ◽  
Roger Smith ◽  
Asta Richter ◽  
Bodo Wolf ◽  
...  
Keyword(s):  
Crystal Surface ◽  
Scanning Force Microscopy ◽  
Depth Range ◽  
Dislocation Loops ◽  
Force Microscopy ◽  
Pile Up ◽  
Out Of Plane ◽  
Scanning Force ◽  
Dynamics Simulations

AbstractThe pile up patterns arising in nanoindentation are shown to be indicative of the sample crystal symmetry. To explain and interpret these patterns, complementary molecular dynamics simulations and experiments have been performed to determine the atomistic mechanisms of the nanoindentation process in single crystal Fe{110}. The simulations show that dislocation loops start from the tip and end on the crystal surface propagating outwards along the four in-plane <111> directions. These loops carry material away from the indenter and form bumps on the surface along these directions separated from the piled-up material around the indenter hole. Atoms also move in the two out-of-plane <111> directions causing propagation of subsurface defects and pile-up around the hole. This finding is confirmed by scanning force microscopy mapping of the imprint, the piling-up pattern proving a suitable indicator of the surface crystallography. Experimental force-depth curves over the depth range of a few nanometers do not appear smooth and show distinct pop-ins. On the sub-nanometer scale these pop-ins are also visible in the simulation curves and occur as a result of the initiation of the dislocation loops from the tip.

Structural and Spectroscopic Study of Langmuir-Schäfer Films of Bis Zn-Ethane-Bridged Porphyrins Dimer

2003 ◽  
Vol 771 ◽  
Author(s):  
G. Panzera ◽  
S. Conoci ◽  
S. Coffa ◽  
B. Pignataro ◽  
S. Sortino ◽  
...  
Keyword(s):  
Surface Pressure ◽  
Scanning Force Microscopy ◽  
Structural Features ◽  
Solid Surfaces ◽  
Condensed Phases ◽  
Brewster Angle Microscopy ◽  
Force Microscopy ◽  
Vis Spectroscopy ◽  
Scanning Force ◽  
Supramolecular Aggregates

AbstractThin films (1-24 layers) of bis-zinc ethane-bridged porphyrin dimer (1) have been transferred on solid surfaces, by the Langmuir- Schäfer (LS) horizontal method. The related surface pressurearea isotherm curve shows that in dependence of the film pressure different condensed phases may occur in the monolayer. The inspection of the monolayer by Brewster Angle Microscopy (BAM) reveals the presence of peculiar networks whose structural features seemingly change upon film compression. On the other hand, the Scanning Force Microscopy (SFM) analysis performed on LS films shows fractal networks constituted by nanoscopic supramolecular aggregates, whose shape and size depend again on the LS deposition surface pressure. Finally, also UV-vis spectroscopy measurements indicates that the absorption is almost linearly related to the film thickness that is directly connected to the surface pressure.

Photoelectric Response of Self Assembled Films of Bacterio-Rhodopsin Purple Membrane Integrated on Silicon

2003 ◽  
Vol 774 ◽  
Author(s):  
D. Ricceri ◽  
G. Scicolone ◽  
O. Di Marco ◽  
S. Conoci ◽  
B. Pignataro ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Light Exposure ◽  
Scanning Force Microscopy ◽  
Purple Membrane ◽  
Morphological Properties ◽  
Force Microscopy ◽  
Scanning Force ◽  
Scanning Electron ◽  
Tungsten Lamp

AbstractBacterio-rhodopsin purple membrane (PM) thin films have been prepared by selfassembling (SA) technique. Morphological properties of the layers were inspected by Scanning Electron Microscopy (SEM) and Scanning Force Microscopy (SFM) highlighting the presence of densely packed PM films. Reflectance Uv-vis spectra on these films revealed the typical bR absorption at 570 nm. By using a tungsten lamp illuminations (250-350 mW) chopped at 0.5Hz, photoelectric responses were detected. Differential (light-on and light-off) photocurrent signals of up to 1 μA/cm2 were obtained upon light exposure.

scholarly journals Tip dependence of three-dimensional scanning force microscopy images of calcite–water interfaces investigated by simulation and experiments

Nanoscale ◽  
2020 ◽  
Vol 12 (24) ◽  
pp. 12856-12868 ◽  
Author(s):  
Keisuke Miyazawa ◽  
John Tracey ◽  
Bernhard Reischl ◽  
Peter Spijker ◽  
Adam S. Foster ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Scanning Force Microscopy ◽  
Force Microscopy ◽  
Scanning Force ◽  
Microscopy Images

In this study, we have investigated the influence of the tip on the three-dimensional scanning force microscopy (3D-SFM) images of calcite–water interfaces by experiments and simulations.

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