Durability and Reliability of Semiconductor Devices

1998 ◽  
Vol 531 ◽  
Author(s):  
V. G. Sidorov ◽  
V. I. Sokolov ◽  
D. V. Sidorov
Keyword(s):  
Composite Materials ◽  
Defect Structure ◽  
Driving Force ◽  
Semiconductor Device ◽  
Semiconductor Devices ◽  
Life Time ◽  
Structure Evolution ◽  
Relaxation Processes ◽  
Device Structure ◽  
General Aspects

AbstractThe aim of the study is to discuss the most general aspects of semiconductor devices durability and reliability. The life time of a semiconductor device is related to the defect structure evolution of the crystalline and noncrystalline components involved. The driving force for the evolution of defect device structure is associated with relaxation processes of internal mechanical stresses. In this report the degradational effects in LEDs based on GaAs(Si) have been analyzed. The discussion of the necessity for research on composite materials creation is also included.

Non-Destructive Measurements of III-V Semiconductor Device Structure by a Hard X-ray Microprobe

1991 ◽  
Vol 240 ◽  
Author(s):  
F. Uchida ◽  
J. Shigeta ◽  
Y. SUZUKI
Keyword(s):  
Semiconductor Device ◽  
Film Structure ◽  
Device Structure ◽  
X Ray ◽  
Model Sample ◽  
Device Structures ◽  
The Difference ◽  
X Ray Absorption ◽  
Non Destructive ◽  
Non Destructive Characterization

ABSTRACTA non-destructive characterization technique featuring a hard X-ray Microprobe is demonstrated for lll-V semiconductor device structures. A GaAs FET with a 2 μm gate length is measured as a model sample of a thin film structure. X-ray scanning microscopic images of the FET are obtained by diffracted X-ray and fluorescence X-ray detection. Diffracted X-ray detection measures the difference in gate material and source or drain material as a gray level difference on the image due to the X-ray absorption ratio. Ni Ka fluorescence detection, on the other hand, provides imaging of 500 Å thick Ni layers, which are contained only in the source and drain metals, through non-destructive observation.

scholarly journals Observations of defect structure evolution in proton and Ni ion irradiated Ni-Cr binary alloys

2016 ◽  
Vol 479 ◽  
pp. 48-58 ◽  
Author(s):  
Samuel A. Briggs ◽  
Christopher M. Barr ◽  
Janne Pakarinen ◽  
Mahmood Mamivand ◽  
Khalid Hattar ◽  
...  
Keyword(s):  
Defect Structure ◽  
Binary Alloys ◽  
Structure Evolution
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