scholarly journals Progress of Power Semiconductor Devices. 1. State of the Art on Power Semiconductor Device.

1998 ◽  
Vol 118 (5) ◽  
pp. 266-269
Author(s):  
MASAHIRO OKAMURA
Author(s):  
Kazunori Shinohara ◽  
Qiang Yu ◽  
Takashi Anzawa ◽  
Hideaki Ishii

To calculate power semiconductor device fatigue with high accuracy, multiphysics analysis comprising electrical, heat, and stress analyses is presented. Power semiconductor devices (e.g., IGBTs) have been widely used in various applications. In particularly, the power semiconductor device (IGBT) becomes important component in vehicle applications. There is a high demand for compact and high-power capacity next-generation vehicles such as electric vehicles and hybrid vehicles. However, it causes the problem such as thermal stress. The reliability of power semiconductor devices has to be investigated by carrying out highly accurate simulations before developing IGBTs. In this paper, the electrical conductivity in silicon (IGBT) is considered as the material parameter. The semiconductor resistance is calculated by voltage distributions in the semiconductor. Comparing the conductivity constant case with the conductivity variation case, we examine the effects of the electrical characteristics of the semiconductor on fatigue.


2019 ◽  
Vol 41 (8) ◽  
pp. 19-30 ◽  
Author(s):  
Matthew J. Marinella ◽  
Stanley Atcitty ◽  
Sandeepan DasGupta ◽  
Robert J. Kaplar ◽  
Mark A. Smith

In this paper different non-dissipative snubber circuits in which RCD snubber circuit, CD snubber circuit, LCD snubber circuit and proposed LCD snubber circuit are implemented in SEPIC converter to obtain high static gain. The snubber circuit is used for the protection of the power semiconductor devices. The requirement of high static gain is necessary in different applications of dc-dc converters, so that efficient operation of the system can be obtained. The basic idea of the snubber circuit used in this paper is to reduce the turn-on and turn-off losses at the time of switching processes. For this purpose, inductor and capacitor combination is required so that during turn-on process, sudden change in current through semiconductor device which is used as a switch, can be reduced. Similarly, during turn-off process, sudden change in voltage across switch can be minimized. Here, different snubber circuit based SEPIC converters are analyzed with the help of MATLAB simulink and results of output voltages and currents are obtained. The results are summarized which clearly shows that the proposed SEPIC converter has high static gain in comparison of the others topologies. Hence non-dissipative snubber circuit based SEPIC converter provides high efficiency than the other modifications in SEPIC converter.


2020 ◽  
Vol 96 (3s) ◽  
pp. 164-168
Author(s):  
Е.М. Гейфман ◽  
И.В. Грехов ◽  
Г.Ю. Каменцев ◽  
А.Ю. Петров ◽  
В.В. Чибиркин

Силовые полупроводниковые приборы (СПП) являются основной электронной компонентной базой для мощной силовой электроники и импульсной техники, для важнейших областей экономики России. Состояние производства СПП оказывает существенное влияние на темпы роста экономики России и ее экономическую безопасность. Power semiconductor devices (PSD) are basic components for the electric power converting electronics and pulsed technology, for the most important branches of the Russian economy. The state-of-the-art in the development and production of PSD has a significant impact on the growth rate of the economy of Russia and its economic security.


2014 ◽  
Vol 134 (6) ◽  
pp. 432-433
Author(s):  
Masahiro Sato ◽  
Akiko Kumada ◽  
Kunihiko Hidaka ◽  
Keisuke Yamashiro ◽  
Yuji Hayase ◽  
...  

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