Non-Destructive Measurements of III-V Semiconductor Device Structure by a Hard X-ray Microprobe
Keyword(s):
X Ray
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ABSTRACTA non-destructive characterization technique featuring a hard X-ray Microprobe is demonstrated for lll-V semiconductor device structures. A GaAs FET with a 2 μm gate length is measured as a model sample of a thin film structure. X-ray scanning microscopic images of the FET are obtained by diffracted X-ray and fluorescence X-ray detection. Diffracted X-ray detection measures the difference in gate material and source or drain material as a gray level difference on the image due to the X-ray absorption ratio. Ni Ka fluorescence detection, on the other hand, provides imaging of 500 Å thick Ni layers, which are contained only in the source and drain metals, through non-destructive observation.
Energy dispersive X-ray diffraction (EDXRD) for operando materials characterization within batteries
2020 ◽
Vol 22
(37)
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pp. 20972-20989
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2017 ◽
Vol 26
(03)
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pp. 1740019