RBS Lattice Site Location and Damage Recovery Studies In GaN

1998 ◽  
Vol 537 ◽  
Author(s):  
E. Alves ◽  
M.F. DaSilva ◽  
J.C. Soares ◽  
J. Bartels ◽  
R. Vianden ◽  
...  
Keyword(s):  
Surface Layer ◽  
Lattice Site ◽  
Complete Recovery ◽  
Lattice Location ◽  
Site Location ◽  
Epitaxial Regrowth

AbstractErbium was implanted with 160 keV at doses between 5x1014 and 5x1015 at/cm2 into (0001) epitaxial GaN on sapphire and annealed at various temperatures between 6000° and 10000° C. The RBS/Channeling technique was used to analyze the damage recovery during different annealing steps and to determine the lattice location of the implanted Er. For a sample implanted with 5x1014 and annealed for 30 min at 600° C a complete overlap of the Er and Ga angular scans across the <0001> axis was observed, indicating that 100% of Er occupies substitutional sites. Measurements along the <101> channel show that Er is located on Ga sites. The damage recovery was slightly better for the samples co-implanted with the same dose of Oxygen in an overlapping profile (E=25 keV). However, a complete recovery of the damage caused by the implantation was not achieved. Samples implanted with higher Er and 0 doses (5x 1015 at/cm2) and at the same energies as above were annealed at 600° for 30 min and at 900°, 1000° C for 120 s using a proximity cap. The higher dose caused an almost complete amorphisation of the surface layer. After annealing indications of epitaxial regrowth were observed, however, the substitutional fraction remains substantially lower and the damage recovery is less complete.

scholarly journals RBS Lattice Site Location and Damage Recovery Studies in GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 933-939 ◽  
Author(s):  
E. Alves ◽  
M.F. DaSilva ◽  
J.C. Soares ◽  
J. Bartels ◽  
R. Vianden ◽  
...  
Keyword(s):  
Surface Layer ◽  
Lattice Site ◽  
Complete Recovery ◽  
Lattice Location ◽  
Site Location ◽  
Epitaxial Regrowth ◽  
Image Position

Erbium was implanted with 160 keV at doses between 5×1014 and 5×1015 at/cm2 into (0001) epitaxial GaN on sapphire and annealed at various temperatures between 600° and 1000° C. The RBS/Channeling technique was used to analyze the damage recovery during different annealing steps and to determine the lattice location of the implanted Er. For a sample implanted with 5×1014 and annealed for 30 min at 600° C a complete overlap of the Er and Ga angular scans across the <0001> axis was observed, indicating that 100% of Er occupies substitutional sites. Measurements along the <10 1> channel show that Er is located on Ga sites. The damage recovery was slightly better for the samples co-implanted with the same dose of Oxygen in an overlapping profile (E=25 keV). However, a complete recovery of the damage caused by the implantation was not achieved. Samples implanted with higher Er and O doses (5×1015 at/cm2 ) and at the same energies as above were annealed at 600° for 30 min and at 900°, 1000° C for 120 s using a proximity cap. The higher dose caused an almost complete amorphisation of the surface layer. After annealing indications of epitaxial regrowth were observed, however, the substitutional fraction remains substantially lower and the damage recovery is less complete.

Dopants in LiNbO3: Lattice Site Location, Ion Implantation and Epitaxial Regrowth

1991 ◽  
Vol 244 ◽  
Author(s):  
L. Rebouta ◽  
J. C. Soares ◽  
M. F. Da Silva ◽  
J. A. Sanz-Garcia ◽  
E. Dieguez ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Integrated Optics ◽  
Lattice Site ◽  
Ion Beam ◽  
Lattice Location ◽  
Integrated Optics Devices ◽  
Site Location ◽  
Co Doping ◽  
Epitaxial Regrowth

ABSTRACTIon-beam/channeling data for the lattice location of Ti, Hf, Er and Nd in LiNbO3 and LiNbO3: Mg are presented. These impurities are relevant in relation to waveguide and integrated optics devices. It is shown that co-doping with Mg markedly influences the lattice location observed in LiNbO3. The amorphization and recrystalization process following Hf implantation and annealing are also discussed.

scholarly journals OPTICAL DOPING OF NITRIDES BY ION IMPLANTATION

2001 ◽  
Vol 15 (28n29) ◽  
pp. 1281-1287 ◽  
Author(s):  
E. ALVES ◽  
K. LORENZ ◽  
R. VIANDEN ◽  
C. BOEMARE ◽  
M. J. SOARES ◽  
...  
Keyword(s):  
Rare Earth ◽  
Rare Earth Elements ◽  
Room Temperature ◽  
Lattice Site ◽  
Rutherford Backscattering Spectrometry ◽  
Complete Recovery ◽  
Nitrogen Atmosphere ◽  
Site Location ◽  
Damage Behavior ◽  
Recombination Processes

A series of rare earth elements (RE) were implanted in GaN epilayers to study the lattice site location and optical activity. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to follow the damage behavior in the Ga sublattice and the site location of the RE. For all the implanted elements (Ce, Pr, Dy, Er, and Lu) the results indicate the complete substitutionality on Ga sites after rapid thermal annealing at 1000°C for 2 min. The only exception occurs for Eu, which occupies a Ga displaced site. Annealing at 1200°C in nitrogen atmosphere at a pressure of 1GPa is necessary to achieve the complete recovery of the damage in the samples. After annealing the recombination processes of the implanted samples were studied by above and below band gap excitation. For Er implanted samples besides the 1.54 μm emission green and red emissions are also observed. Red emissions from 5 D 0 → 7 F 2 and 3 P 0 → 3 F 2 transitions were found in Eu and Pr implanted samples even at room temperature.

Lattice Location of Supersaturated Arsenic Atoms in Silicon Studied by Channeled Ion Beam

1992 ◽  
Vol 279 ◽  
Author(s):  
Li Xu ◽  
Peihsin Tsien ◽  
Zhijian Li
Keyword(s):  
Angular Distribution ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Solubility ◽  
Lattice Site ◽  
Ion Beam ◽  
Lattice Location ◽  
Site Location ◽  
Deactivation Mechanism

ABSTRACTBy using rapid thermal annealing (RTA) we can obtain a me testable carrier concentration which well exceeds the solid solubility of arsenic dopant in silicon. The deactivation of such the supersaturated dopant, however, may result in relaxation of the metastable concentration. This paper describes lattice location of the deactivated arsenic atoms determined by channeling angular distribution. On the basis of the results for lattice site location the deactivation mechanism of supersaturated As in Si is discussed.

Lattice site location and luminescence studies of AlxGa1−xN alloys doped with thulium ions

2013 ◽  
Vol 307 ◽  
pp. 495-498 ◽  
Author(s):  
M. Fialho ◽  
K. Lorenz ◽  
S. Magalhães ◽  
J. Rodrigues ◽  
N.F. Santos ◽  
...  
Keyword(s):  
Lattice Site ◽  
Site Location

Lattice site location and outdiffusion of mercury implanted in GaAs

1991 ◽  
Vol 59-60 ◽  
pp. 1090-1093 ◽  
Author(s):  
J.C. Soares ◽  
A.A. Melo ◽  
E. Alves ◽  
M.F. da Silva ◽  
W.P. Gillin ◽  
...  
Keyword(s):  
Lattice Site ◽  
Site Location

Doping of GaN by ion implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

Lattice site location of implanted argon in iron and nickel crystals

1975 ◽  
Vol 27 (1-2) ◽  
pp. 43-45 ◽  
Author(s):  
W. H. Kool ◽  
L. W. Wiggers ◽  
F. P. Viehböck ◽  
F. W. Saris
Keyword(s):  
Lattice Site ◽  
Site Location ◽  
Nickel Crystals
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