Dopants in LiNbO3: Lattice Site Location, Ion Implantation and Epitaxial Regrowth

1991 ◽  
Vol 244 ◽  
Author(s):  
L. Rebouta ◽  
J. C. Soares ◽  
M. F. Da Silva ◽  
J. A. Sanz-Garcia ◽  
E. Dieguez ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Integrated Optics ◽  
Lattice Site ◽  
Ion Beam ◽  
Lattice Location ◽  
Integrated Optics Devices ◽  
Site Location ◽  
Co Doping ◽  
Epitaxial Regrowth

ABSTRACTIon-beam/channeling data for the lattice location of Ti, Hf, Er and Nd in LiNbO3 and LiNbO3: Mg are presented. These impurities are relevant in relation to waveguide and integrated optics devices. It is shown that co-doping with Mg markedly influences the lattice location observed in LiNbO3. The amorphization and recrystalization process following Hf implantation and annealing are also discussed.

Lattice Location of Supersaturated Arsenic Atoms in Silicon Studied by Channeled Ion Beam

1992 ◽  
Vol 279 ◽  
Author(s):  
Li Xu ◽  
Peihsin Tsien ◽  
Zhijian Li
Keyword(s):  
Angular Distribution ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Solubility ◽  
Lattice Site ◽  
Ion Beam ◽  
Lattice Location ◽  
Site Location ◽  
Deactivation Mechanism

ABSTRACTBy using rapid thermal annealing (RTA) we can obtain a me testable carrier concentration which well exceeds the solid solubility of arsenic dopant in silicon. The deactivation of such the supersaturated dopant, however, may result in relaxation of the metastable concentration. This paper describes lattice location of the deactivated arsenic atoms determined by channeling angular distribution. On the basis of the results for lattice site location the deactivation mechanism of supersaturated As in Si is discussed.

scholarly journals RBS Lattice Site Location and Damage Recovery Studies in GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 933-939 ◽  
Author(s):  
E. Alves ◽  
M.F. DaSilva ◽  
J.C. Soares ◽  
J. Bartels ◽  
R. Vianden ◽  
...  
Keyword(s):  
Surface Layer ◽  
Lattice Site ◽  
Complete Recovery ◽  
Lattice Location ◽  
Site Location ◽  
Epitaxial Regrowth ◽  
Image Position

Erbium was implanted with 160 keV at doses between 5×1014 and 5×1015 at/cm2 into (0001) epitaxial GaN on sapphire and annealed at various temperatures between 600° and 1000° C. The RBS/Channeling technique was used to analyze the damage recovery during different annealing steps and to determine the lattice location of the implanted Er. For a sample implanted with 5×1014 and annealed for 30 min at 600° C a complete overlap of the Er and Ga angular scans across the <0001> axis was observed, indicating that 100% of Er occupies substitutional sites. Measurements along the <10 1> channel show that Er is located on Ga sites. The damage recovery was slightly better for the samples co-implanted with the same dose of Oxygen in an overlapping profile (E=25 keV). However, a complete recovery of the damage caused by the implantation was not achieved. Samples implanted with higher Er and O doses (5×1015 at/cm2 ) and at the same energies as above were annealed at 600° for 30 min and at 900°, 1000° C for 120 s using a proximity cap. The higher dose caused an almost complete amorphisation of the surface layer. After annealing indications of epitaxial regrowth were observed, however, the substitutional fraction remains substantially lower and the damage recovery is less complete.

Lattice site location of ultra-shallow implanted B in Si using ion beam analysis

2001 ◽  
Vol 669 ◽  
Author(s):  
Hajime Kobayashi ◽  
Ichiro Nomachi ◽  
Susumu Kusanagi ◽  
Fumitaka Nishiyama
Keyword(s):  
Ion Implantation ◽  
Lattice Site ◽  
Rutherford Backscattering Spectrometry ◽  
Hole Concentration ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
High Dose ◽  
Site Location ◽  
Ion Channeling ◽  
Implantation Damage

ABSTRACTWe have investigated the lattice site location of B in Si using ion channeling in combination with nuclear reaction analysis (NRA). Silicon samples implanted with Boron at an energy of 10 keV and a dose of 5 × 1014 cm−2 (low dose samples) or 5 × 1015 cm−2 (high dose samples) were annealed at 1000 °C for 10 seconds (RTA) or at 800 °C for 10 minutes (FA). The activation efficiencies of these samples were estimated from the B atomic concentration and the hole concentration obtained by secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP), respectively. We also studied the ion implantation damage of Si crystals using ion channeling combined with Rutherford backscattering spectrometry (RBS). We found that the activation efficiency is proportional to the substitutionality, meaning that substitutional B is fully activated without any carrier compensation. We also found that B atoms go to the substitutional sites and are activated up to the solubility limit in the high dose samples. However, the ion implantation damage of the crystalline Si in the high dose samples increases somewhat after annealing.

RBS Lattice Site Location and Damage Recovery Studies In GaN

1998 ◽  
Vol 537 ◽  
Author(s):  
E. Alves ◽  
M.F. DaSilva ◽  
J.C. Soares ◽  
J. Bartels ◽  
R. Vianden ◽  
...  
Keyword(s):  
Surface Layer ◽  
Lattice Site ◽  
Complete Recovery ◽  
Lattice Location ◽  
Site Location ◽  
Epitaxial Regrowth

AbstractErbium was implanted with 160 keV at doses between 5x1014 and 5x1015 at/cm2 into (0001) epitaxial GaN on sapphire and annealed at various temperatures between 6000° and 10000° C. The RBS/Channeling technique was used to analyze the damage recovery during different annealing steps and to determine the lattice location of the implanted Er. For a sample implanted with 5x1014 and annealed for 30 min at 600° C a complete overlap of the Er and Ga angular scans across the <0001> axis was observed, indicating that 100% of Er occupies substitutional sites. Measurements along the <101> channel show that Er is located on Ga sites. The damage recovery was slightly better for the samples co-implanted with the same dose of Oxygen in an overlapping profile (E=25 keV). However, a complete recovery of the damage caused by the implantation was not achieved. Samples implanted with higher Er and 0 doses (5x 1015 at/cm2) and at the same energies as above were annealed at 600° for 30 min and at 900°, 1000° C for 120 s using a proximity cap. The higher dose caused an almost complete amorphisation of the surface layer. After annealing indications of epitaxial regrowth were observed, however, the substitutional fraction remains substantially lower and the damage recovery is less complete.

Doping of GaN by ion implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

High Dose High Temperature Ion Implantation of Ge into 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 851-854 ◽  
Author(s):  
Thomas Kups ◽  
Petia Weih ◽  
M. Voelskow ◽  
Wolfgang Skorupa ◽  
Jörg Pezoldt
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Lattice Site ◽  
Lattice Distortion ◽  
Stacking Faults ◽  
Implantation Dose ◽  
Location Analysis ◽  
High Dose ◽  
Site Location ◽  
Different Types

A box like Ge distribution was formed by ion implantation at 600°C. The Ge concentration was varied from 1 to 20 %. The TEM investigations revealed an increasing damage formation with increasing implantation dose. No polytype inclusions were observed in the implanted regions. A detailed analysis showed different types of lattice distortion identified as insertion stacking faults. The lattice site location analysis by “atomic location by channelling enhanced microanalysis” revealed that the implanted Ge is mainly located at interstitial positions.

Doping of GaN by ion implantation

2000 ◽  
Vol 647 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

AbstractIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 °C occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 µm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

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