Point Defect Characterization in CoAl Using Positron Annihilation

1998 ◽  
Vol 552 ◽  
Author(s):  
Werner Puff ◽  
Bernd Logar ◽  
Adam G. Balogh
Keyword(s):  
Point Defect ◽  
Positron Lifetime ◽  
Composition Range ◽  
Defect Characterization ◽  
Doppler Broadening ◽  
Dramatic Decrease ◽  
S Parameter ◽  
Co Concentration ◽  
Long Time ◽  
Positron Lifetime Spectroscopy

ABSTRACTVacancy-like defects in CoAl in the composition range 48.5 at.-% <Cco, < 53 at.-% are investigated by means of positron lifetime spectroscopy and Doppler-broadening measurements. The observed lifetimes in the annealed samples confirm that defects are quenched-in during the production of the samples. The values of the positron lifetime and the S-parameter decrease with increasing Co concentration. After quenching from 1400°C or 1600°C an increase in the positron parameters isobserved. Long-time annealing of the Co-rich sample shows a dramatic decrease of the positron lifetime to the expected bulk lifetime.

An Investigation of Point Defects in NiAl Using Positron Annihilation Techniques

1998 ◽  
Vol 552 ◽  
Author(s):  
Werner Puff ◽  
Bernd Logar ◽  
Adam G. Balogh
Keyword(s):  
Positron Annihilation ◽  
Point Defects ◽  
Proton Irradiation ◽  
Positron Lifetime ◽  
Composition Range ◽  
Isochronal Annealing ◽  
Doppler Broadening ◽  
Positron Lifetime Spectroscopy ◽  
Induced Defects

ABSTRACTVacancy-like defects in NiAl in the composition range 47 at.-% < CNi < 53 at.-% are investigated by means of positron lifetime spectroscopy and Doppler-broadening measurements. The observed lifetimes in the annealed samples confirm that defects are quenched-in during the production of the samples. Isochronal annealing of samples quenched at 1600°C and after proton irradiation show that the induced defects are quite different.

Defect analysis in FeAl and FeSi with positron lifetime spectroscopy and Doppler broadening

1999 ◽  
Vol 7 (3-4) ◽  
pp. 259-267 ◽  
Author(s):  
A. Broska ◽  
J. Wolff ◽  
M. Franz ◽  
Th. Hehenkamp
Keyword(s):  
Positron Lifetime ◽  
Doppler Broadening ◽  
Defect Analysis ◽  
Positron Lifetime Spectroscopy

Proton Irradiation Induced Defects in 611- and 4H-SiC

1998 ◽  
Vol 540 ◽  
Author(s):  
Werner Puff ◽  
Adam G. Balogh ◽  
Peter Mascher
Keyword(s):  
Proton Irradiation ◽  
Positron Lifetime ◽  
Doppler Broadening ◽  
Defect Complexes ◽  
Radiation Induced ◽  
Positron Lifetime Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Type Sample

AbstractAnnealing of defects in proton irradiated bulk n-type 6H- and semi-insulating 4H-SiC has been investigated by positron lifetime spectroscopy and Doppler-broadening measurements. For the n-type sample radiation induced defects in dependence of the proton fluence were studied. Three or four annealing stages were found, during which the formation of larger defect complexes could be observed.

Defect Characterization Of InAs Wafers Using Positron Lifetime Spectroscopy

1996 ◽  
Vol 442 ◽  
Author(s):  
J. Mahony ◽  
P. Mascher
Keyword(s):  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Positron Lifetime ◽  
Defect Characterization ◽  
Lifetime Measurements ◽  
Positron Lifetime Spectroscopy ◽  
Heavily Doped

AbstractPositron lifetime measurements on InAs wafers have shown that the positron bulk lifetime in InAs is 246±2 ps. Most samples exhibit a defect lifetime of 287±6 ps, which is attributable to monovacancy-impurity complexes with a concentration of 7±2×10 16 cm-3. Very heavily doped n-type samples exhibit a defect lifetime of 332–340 ps, characteristic of divacancies. The concentration of these defects is also close to 1017 cm−3. Both types of defects are stable for rapid thermal annealing up to 850 °C, and both defects are neutral. The formation of the divacancytype defects may be correlated with a discrepancy between the carrier concentration and the total

Vacancy-Type Defects in as-Grown and Proton-Irradiated 6H-SiC

1998 ◽  
Vol 512 ◽  
Author(s):  
Werner Puff ◽  
Peter Mascher ◽  
Adam G. Balogh
Keyword(s):  
Positron Lifetime ◽  
Doppler Broadening ◽  
Defect Complexes ◽  
Radiation Induced ◽  
Positron Lifetime Spectroscopy ◽  
P Type ◽  
Induced Defects

ABSTRACTAnnealing of defects in as-grown and proton irradiated bulk n- and p-type 6H-SiC has been investigated by positron lifetime spectroscopy and Doppler-broadening measurements. The grown-in defects do not anneal out until 1600 °C, whereas the radiation induced defects show three main annealing stages well below this temperature. During annealing, the formation of larger defect complexes can be observed.

A Study of Defects in Czochralski-Grown Silicon by Positron Annihilation Spectroscopy

1992 ◽  
Vol 262 ◽  
Author(s):  
S. C. Sharma ◽  
N. Hozhabri ◽  
R. G. Hyer ◽  
T. Hossain ◽  
S. Kim ◽  
...  
Keyword(s):  
Positron Lifetime ◽  
Single Crystal Silicon ◽  
Positron Beam ◽  
Positron Annihilation Spectroscopy ◽  
Doppler Broadening ◽  
Crystal Silicon ◽  
Different Depths ◽  
Positron Lifetime Spectroscopy ◽  
Doppler Broadening Spectra ◽  
Variable Energy

ABSTRACTWe have studied defects in Cz-grown single crystal silicon by utilizing a variable energy positron beam and positron lifetime spectroscopy in conjunction with surface photovoltage measurements. We present results for the depth profile of defects obtained from the Doppler broadening spectra measured by implanting variable energy positrons at different depths ranging from the surface down to ∼ 1 /xm deep. We have also measured positron lifetime spectra at different locations on a wafer and have obtained a radial variation in the density of the vacancy-type defects.

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