RAMAN SCATTERING AND X-RAY DIFFRACTION CHARACTERIZATION OF AMORPHOUS SEMICONDUCTOR MULTILAYER INTERFACES

1985 ◽  
Vol 56 ◽  
Author(s):  
J. GONZALEZ ◽  
D.D. ALLRED ◽  
O.V. NGUYEN ◽  
D. MARTIN ◽  
D. PAWLIK
Keyword(s):  
Raman Spectroscopy ◽  
Raman Scattering ◽  
Raman Spectra ◽  
Amorphous Semiconductor ◽  
Chemical Bonds ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sharp Interfaces ◽  
Deposition Techniques

AbstractIn the present study, Raman spectroscopy (RS) and x-ray diffraction have been used to characterize semiconductor multilayer interfaces. A model for Raman spectra of multilayers is developed and applied to the specific case of the interfaces of a-Si/a-Ge multilayers. Quantification of the ‘blurring’ of interfaces is possible because RS is capable of directly ‘counting’ the total number of chemical bonds of a given type in the film. Multilayers, prepared by various deposition techniques, are compared. Several a-Si/a-Ge multilayers deposited by UHV evaporation (MBD) exhibit exceptionally sharp interfaces (intermixing width <l.0Å) and regular periodicities.

Raman scattering and x-ray diffraction characterization of amorphous semiconductor multilayer interfaces

1986 ◽  
Vol 1 (3) ◽  
pp. 468-475 ◽  
Author(s):  
D.D. Allred ◽  
J. Gonzalez-Hernandez ◽  
O.V. Nguyen ◽  
D. Martin ◽  
D. Pawlik
Keyword(s):  
Raman Spectra ◽  
High Vacuum ◽  
Amorphous Semiconductor ◽  
Ultra High Vacuum ◽  
Chemical Bonds ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sharp Interfaces ◽  
Deposition Techniques

Raman spectroscopy (RS) and low-angle x-ray diffraction (LAXRD) have been used to characterize semiconductor multilayer interfaces. In the present study a model for Raman spectra of multilayers is developed and applied to the specific case of the interfaces of a-Si/a-Ge multilayers. Quantification of the “blurring” of interfaces is possible because peak heights in the Raman spectra of thin films are proportional to the number of scatterers, thus RS is capable of directly “counting” the total number of chemical bonds of a given type in the film. Multilayers, prepared by various deposition techniques, are compared. The relative roles of LAXRD and RS in investigating interfaces are contrasted. Several a-Si/a-Ge multilayers deposited by ultra-high vacuum (UHV) evaporation (MBD) are found to exhibit very regular periodicities and exceptionally sharp interfaces (<1.0 Å intermixing).

Structural characterization of TiO2 ultrafine particles

1999 ◽  
Vol 14 (2) ◽  
pp. 442-446 ◽  
Author(s):  
Yingchun Zhu ◽  
Tiao Liu ◽  
Chuanxian Ding
Keyword(s):  
Crystal Structure ◽  
Raman Spectroscopy ◽  
Phase Transformation ◽  
Fourier Transform ◽  
Raman Spectra ◽  
Ultrafine Particles ◽  
X Ray Diffraction ◽  
X Ray ◽  
Factors Influencing

Four samples of TiO2 ultrafine particles (UFP) were obtained through different processes. The structure of TiO2 ultrafine particles and the factors influencing the structure were investigated with Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy, and x-ray diffraction (XRD). Both Raman spectra and x-ray diffractograms show the similar regularity of the phase transformation among the four samples. The observed bimodal lineshape-structure in the Raman spectra is attributed to the intragrain and grain-boundary components of TiO2 UFP. The crystal structure of TiO2 UFP is found to be distorted by the surface structure such as OH and OCH2CH3 groups coordinated on the surface of TiO2 UFP.

CHARACTERIZATION OF POTASSIUM DOPED GdBa2Cu3O7−δ USING RAMAN SPECTROSCOPY AND X-RAY DIFFRACTION

1995 ◽  
Vol 09 (26n27) ◽  
pp. 1739-1752
Author(s):  
PREETHI CICILY THOMAS ◽  
MANOJ KUMAR K. ◽  
V. UNNIKRISHNAN NAYAR ◽  
VIDYALAL V. ◽  
C.P.G. VALLABHAN
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectra ◽  
Tetragonal Phase ◽  
Orthorhombic Phase ◽  
Superconducting Transition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resistivity Measurements ◽  
Xrd Patterns

Potassium doped and undoped GdBa 2 Cu 3 O 7−δ have been prepared and superconducting transition temperatures between 92 K and 100 K have been determined from resistivity measurements. Raman spectra of doped and undoped samples are identical and they contain bands corresponding to both the superconducting orthorhombic phase and nonsuperconducting tetragonal phase. XRD patterns also reveal both the phases. Raman spectra recorded at 92 K of undoped GdBa 2 Cu 3 O 7−δ and doped GdBa 2 Cu 3 O 7−δ with weight percentages 0.75, 1.00, 1.25 and 1.50 of K shows a softening of the band at 338 cm−1.

Deposition of TRISO Particles With Superhard SiC Coatings and the Characterization of Anisotropy by Raman Spectroscopy

2009 ◽  
Vol 131 (4) ◽  
Author(s):  
E. López-Honorato ◽  
P. J. Meadows ◽  
J. Tan ◽  
Y. Xiang ◽  
P. Xiao
Keyword(s):  
Solid Solution ◽  
Raman Spectroscopy ◽  
Pyrolytic Carbon ◽  
X Ray Diffraction ◽  
X Ray ◽  
Flat Substrate ◽  
High Concentrations ◽  
Triso Particles ◽  
Sic Coatings

In this work we have deposited silicon carbide (SiC) at 1300°C with the addition of small amounts of propylene. The use of propylene and high concentrations of methyltrichlorosilane (9 vol %) allowed the deposition of superhard SiC coatings (42 GPa). The superhard SiC could result from the presence of a SiC–C solid solution, undetectable by X-ray diffraction but visible by Raman spectroscopy. Another sample obtained by the use of 50 vol % Argon, also showed the formation of SiC with good properties. The use of a flat substrate together with the particles showed the importance of carrying out the analysis on actual particles rather than in flat substrates. We show that it is possible to characterize the anisotropy of pyrolytic carbon by Raman spectroscopy.

scholarly journals Synthesis and Structural Properties of Nanocomposites Based on Synthetic Opals and Active Dielectrics

2019 ◽  
Vol 12 (1) ◽  
pp. 19
Author(s):  
Bilal Abu Sal
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystals ◽  
Structural Properties ◽  
Raman Spectra ◽  
Phase Structure ◽  
Opal Matrix ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystal State ◽  
Synthetic Opals

This work is devoted to generalize and analyze the previouse results of new photonic-crystalline nanomaterials based on synthetic opals and active dielectrics. Data were characterized by X-ray diffraction and Raman spectroscopy. Active dielectrics infiltrated into the pores of the opal from the melt. The phase structure composition of the infiltrated materials into the pores of the opal matrix were analyzed. The results of x-ray diffraction and Raman spectra allowed to establish the crystal state of active dielectrics in the pores of the opal. The Raman spectra of some opal-active dielectric nanocomposites revealed new bands and changes in band intensities compared to the spectra of single crystals of active dielectrics. Further more, differences in band intensities in the spectra were measured at different spots of the sample&lsquo;s surface were observed. The revealed changes were attributed to the formation of new crystalline phases due to the injected dielectrics in opal pores.

Detection of Phase Purity of Sr2FeMoO6 by Raman Spectroscopy

2014 ◽  
Vol 989-994 ◽  
pp. 130-133
Author(s):  
Zhen Feng Xu ◽  
Qin Zhang ◽  
Suo Jia Yuan
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectra ◽  
Broad Peak ◽  
X Ray Diffraction ◽  
Phase Purity ◽  
X Ray

. The micro-Raman technique is used to examine the phase purity of Sr2FeMoO6 compound in this work. It is found that the Raman spectra of Sr2FeMoO6 compound without impurity consists of the peaks at about 440cm-1 and 620cm-1. The broad peak and shoulder at 820-890cm-1 in the Raman spectra is assigned to the most common impurity SrMoO4 and some other unidentified co-existing phases, which is approved by the results of X-ray diffraction.

Thermal Silicidation of Ni/SiGe and Characterization of Resulting Silicide Films Using Raman Spectroscopy and X-ray Diffraction

2020 ◽  
Vol 98 (5) ◽  
pp. 457-464
Author(s):  
Woo Sik Yoo ◽  
Kitaek Kang ◽  
Toshikazu Ishigaki ◽  
Jung Gon Kim ◽  
Noriyuki Hasuike ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray
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